Chang-Hsiao
Chang-Hsiao Chen, Taipei County TW
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20110144467 | FLEXIBLE 3D MICROPROBE STRUCTURE - The present invention discloses a flexible 3D microprobe structure, which comprises at least one probe, a base and a hinge portion. The probe is connected to the base via the hinge portion. The probe forms a bend angle with respect to a normal of the base by attracting the probe through an electrostatic force to make the hinge portion bend with respect to the base, and thus to form a 3D structure having the bend angle. The probe, the base and the hinge portion are made of a flexible polymeric material to reduce the inflammation response of creatures. Further, a fixing element is used to enhance the structural strength of the flexible 3D microprobe structure. | 06-16-2011 |
Chang-Hsiao Chen, New Taipei City TW
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20130085359 | FLEXIBLE MICROELECTRODE FOR DETECTING NEURAL SIGNALS AND A METHOD OF FABRICATING THE SAME - A flexible microelectrode for detecting neural signals and a method of fabricating the same are disclosed. The method comprises steps: growing a graphene electrode layer on a temporary substrate; growing a flexible substrate on the graphene electrode layer and patterning the flexible substrate; removing the temporary substrate but preserving the graphene electrode layer and the flexible substrate to form an electrode body; and using an insulating layer to wrap the electrode body but exposing a bio-electrode end to contact a living body and detect the signals thereof. The graphene electrode layer features high electric conductivity, high biocompatibility and low noise. The flexible substrate is bendable. Thus is improved the adherence of the skin tissue to the bio-electrode end and decreased the likelihood of skin inflammation. | 04-04-2013 |
Chang-Hsiao Lee, Shanhua Township TW
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20110244678 | SEMICONDUCTOR PROCESS - A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the opening. The cleaning solution includes a triazole compound with a content of 0.00275 to 3 wt %, sulfuric acid with a content of 1 to 10 wt %, hydrofluoric acid with a content of 1 to 200 ppm and water. The semiconductor process can reduce the possibility of having an incomplete turning on, a leakage or a short, so that the yield of the product is increased. | 10-06-2011 |
20120156885 | METHOD AND SYSTEM FOR PROCESSING SEMICONDUCTOR WAFER - In a method for processing a semiconductor wafer formed with a copper conductor, the semiconductor wafer is etched in an etching chamber to expose the copper conductor. The etched semiconductor wafer is transmitted from the etching chamber to a buffer zone, where a gas inert to the semiconductor wafer is introduced for a period of time. Then the semiconductor wafer is moved out of the buffer zone to a loading module. Nitrogen is one of the suitable options as the gas, and argon is another option. | 06-21-2012 |
Chang-Hsiao Lee, Hsin-Chu TW
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20120242622 | TOUCH MODULE - A touch module includes a panel device, an outer frame, and an optical sensor. The panel device includes an array substrate and a display panel having a touch surface. The array substrate is electrically connected to the display panel. The outer frame is disposed on the panel device. The optical sensor is disposed between the panel device and the outer frame, including a wire, at least one lens, a photosensitive chip, and a reflection mirror. The wire is formed on the array substrate. The lens is disposed between the display panel and the outer frame for guiding light transmitted from the touch surface. The photosensitive chip is electrically connected to one end of the wire. The reflection mirror is disposed above the photosensitive chip for reflecting the light guided by the lens to the photosensitive chip. | 09-27-2012 |
Chang-Hsiao Lee, Tainan City TW
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20130337650 | METHOD OF MANUFACTURING DUAL DAMASCENE STRUCTURE - A method for fabricating a dual damascene structure includes the following steps. At first, a dielectric layer, a dielectric mask layer and a metal mask layer are sequentially formed on a substrate. A plurality of trench openings is formed in the metal mask layer, and a part of the metal mask layer is exposed in the bottom of each of the trench openings. Subsequently, a plurality of via openings are formed in the dielectric mask layer, and a part of the dielectric mask layer is exposed in a bottom of each of the via openings. Furthermore, the trench openings and the via openings are transferred to the dielectric layer to form a plurality of dual damascene openings. | 12-19-2013 |