Patent application number | Description | Published |
20080219333 | Signal transceiver for differential data communication of ternary data and method therefor - A signal transceiver may include three transmission lines, a signal transmission unit, and/or a signal reception unit. The signal transmission unit may be configured encode first through third transmission data to generate first through third data and transmit the first through third data through the three transmission lines. The signal transmission unit may be configured to generate each of the first through third data at one of four or more voltage level. The signal reception unit may be configured to receive the first through third data and monitor voltage differences between the first through third data to restore the first through third data into first through third reception data. | 09-11-2008 |
20080252386 | Quadrature-phase voltage controlled oscillator - A voltage controlled oscillator (VCO) is provided. The VCO may include a first ring oscillation circuit that may have a plurality of delay cells and may output first differential oscillation signals, and a second ring oscillation circuit that may have a plurality of delay cells and may output second differential oscillation signals. The delay cells of the first ring oscillation circuit may be respectively cross-coupled to the corresponding delay cells of the second ring oscillation circuit. Each of the delay cells may include a differential amplification circuit that may output a first differential signal based on a first control signal, and a negative resistance circuit that may be connected in parallel to a pair of output terminals of the differential amplification circuit, may receive a second differential signal, may adjust the phase of the first differential signal based on a second control signal, and may then output the first differential signal. | 10-16-2008 |
20100073097 | Oscillator, oscillator implementations and method of generating an oscillating signal - One embodiment of the oscillator includes a first starved inverter and a second starved inverter. An inner inverter of the second starved inverter is cross-coupled to an inner inverter of the first starved inverter. The oscillator further includes a first inverter connected to output of the inner inverter of the first starved inverter, and a second inverter connected to output of the inner inverter of the second starved inverter. | 03-25-2010 |
20100124137 | VOLTAGE-CONTROLLED OSCILLATOR, PHASE-LOCKED LOOP, AND MEMORY DEVICE - A voltage-controlled oscillator comprises a first oscillator and a second oscillator. The first oscillator may generate a plurality of intermediate clock signals at a plurality of first nodes, multiply connected to a plurality of first ring shape circuits, in response to a control voltage. The plurality of intermediate clock signals may have a different phase from each other and a same phase difference with each other. The second oscillator may generate a plurality of output clock signals at a plurality of second nodes, multiply connected to a plurality of second ring shape circuits, by changing a voltage level of the intermediate clock signals. The plurality of second ring shape circuits may pass the plurality of first nodes. | 05-20-2010 |
20100171555 | CIRCUIT FOR REDUCING DUTY DISTORTION IN A SEMICONDUCTOR MEMORY DEVICE - A circuit for outputting an amplified clock signal is disclosed. The circuit includes a first input terminal for inputting a first clock signal, a second input terminal for inputting a second clock signal, a first amplifier circuit for amplifying the first clock signal and outputting a first amplified clock signal at a first output terminal, and a second amplifier circuit for amplifying the second clock signal and outputting a second amplified clock signal at a second output terminal. The circuit additionally includes a level maintenance circuit connected to the first output terminal and the second output terminal. The circuit further includes an output circuit connected to the first output terminal and the second output terminal and configured to output a further amplified clock signal based on the first amplified clock signal and the second amplified clock signal. The level maintenance circuit is configured to reduce duty distortion in the further amplified clock signal. | 07-08-2010 |
20100171561 | OSCILLATOR - An oscillator including: a first complementary differential amplifier (CDA) outputting a first output signal obtained by amplifying signals input to a first input terminal and a second input terminal of the first CDA; and a second CDA outputting a second output signal obtained by amplifying signals input to a first input terminal and a second input terminal of the second CDA, the second output signal having a differential phase with respect to the first output signal, wherein the first CDA may include an output terminal connected to the first input terminal and the second input terminal of the second CDA and the second CDA may include an output terminal connected to the first input terminal and the second input terminal of the first CDA. | 07-08-2010 |
20120075024 | OSCILLATOR, OSCILLATOR IMPLEMENTATIONS AND METHOD OF GENERATING AN OSCIALLATING SIGNAL - One embodiment of the oscillator includes a first starved inverter and a second starved inverter. An inner inverter of the second starved inverter is cross-coupled to an inner inverter of the first starved inverter. The oscillator further includes a first inverter connected to output of the inner inverter of the first starved inverter, and a second inverter connected to output of the inner inverter of the second starved inverter. | 03-29-2012 |
20130064008 | DATA READ CIRCUIT, NONVOLATILE MEMORY DEVICE COMPRISING DATA READ CIRCUIT, AND METHOD OF READING DATA FROM NONVOLATILE MEMORY DEVICE - A nonvolatile memory device comprises a nonvolatile cell array comprising a memory cell and a reference cell, a clamping circuit electrically connected to the memory cell and configured to clamp a voltage applied to a data sensing line during a read operation, and a clamping voltage generation unit configured to generate a clamping voltage responsive to a first voltage having a level based on the reference cell, and to feed back the clamping voltage to the clamping circuit. | 03-14-2013 |
20130148429 | MEMORY DEVICE, METHOD OF PERFORMING READ OR WRITE OPERATION AND MEMORY SYSTEM INCLUDING THE SAME - Provided is a memory device having a first switch configured to receive a first CSL signal to input or output data. A second switch is configured to receive a second CSL signal. A sensing and latch circuit (SLC) is coupled between the first and second switches. And at least one memory cell is coupled to the second switch. The second switch is configured to control timing of read or write operations of the at least one memory cell in response to the second CSL signal, e.g., where a read operation can be performed in not more than about 5 ns. The SLC operates as a latch in a write mode and as an amplifier in a read mode. The memory device may comprise part of a memory system or other apparatus including such memory device or system. Methods of performing read and write operations using such memory device are also provided. | 06-13-2013 |
20130311717 | MAGNETIC RANDOM ACCESS MEMORY - A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes. | 11-21-2013 |
20130322154 | SENSE AMPLIFIER CIRCUITRY FOR RESISTIVE TYPE MEMORY - Example embodiments include a resistive type memory current sense amplifier circuit including differential output terminals, first and second input terminals, pre-charge transistors, and current modulating transistors coupled directly to the pre-charge transistors. The pre-charge configuration provides high peak currents to charge the bit line and reference line during a “ready” or “pre-charge” stage of operation of the current sense amplifier circuit. The current modulating transistors are configured to operate in a saturation region mode during at least a “set” or “amplification” stage. The current modulating transistors continuously average a bit line current and a reference line current during the “set” or “amplification” stage, thereby improving noise immunity of the circuit. During a “go” or “latch” stage of operation, a logical value “0” or “1” is latched at the differential output terminals based on positive feedback of a latch circuit. | 12-05-2013 |
20130322162 | SEMICONDUCTOR MEMORY DEVICES AND RELATED METHODS OF OPERATION - A semiconductor memory device includes a cell array including one or more bank groups, where each of the one or more bank groups includes a plurality of banks and each of the plurality of banks includes a plurality of spin transfer torque magneto resistive random access memory (STT-MRAM) cells. The semiconductor memory device further includes a source voltage generating unit for applying a voltage to a source line connected to the each of the plurality of STT-MRAM cells, and a command decoder for decoding a command from an external source in order to perform read and write operations on the plurality of STT-MRAM cells. The command includes a combination of at least one signal of a row address strobe (RAS), a column address strobe (CAS), a chip selecting signal (CS), a write enable signal (WE), and a clock enable signal (CKE) | 12-05-2013 |
20140003124 | SENSE AMPLIFIER CIRCUITRY FOR RESISTIVE TYPE MEMORY | 01-02-2014 |
20140016404 | MAGNETIC RANDOM ACCESS MEMORY - A magnetic memory device such as a magnetic random access memory (MRAM), and a memory module and a memory system on which the magnetic memory device is mounted are disclosed. The MRAM includes magnetic memory cells each of which varies between at least two states according to a magnetization direction and an interface unit that provides various interface functions. The memory module includes a module board and at least one MRAM chip mounted on the module board, and further includes a buffer chip that manages an operation of the at least one MRAM chip. The memory system includes the MRAM and a memory controller that communicates with the MRAM, and may communicate an electric-to-optical conversion signal or an optical-to-electric conversion signal by using an optical link that is connected between the MRAM and the memory controller. | 01-16-2014 |
20140112053 | Write driver in sense amplifier for resistive type memory - Example embodiments include a level shifting write driver in a sense amplifier for a resistive type memory. The write driver may include a cross-coupled latch circuit, a first output section, a second output section, and an input section. The first output section includes one or more first driving transistors to drive a first current through the first output section and not through the cross-coupled latch. The second output section includes one or more second driving transistors configured to drive a second current through the second output section and not through the cross-coupled latch. The current flows of the outputs sections are isolated from the latch circuit. In some embodiments, no two PMOS type transistors are serially connected, thereby reducing the consumption of die area. In some embodiments, a single control signal is used to operate the write driver. | 04-24-2014 |
20140146600 | MEMORY SYSTEM HAVING VARIABLE OPERATING VOLTAGE AND RELATED METHOD OF OPERATION - A magneto-resistive random access memory (MRAM) comprising an MRAM cell array having an MRAM cell, and a control and voltage generation unit configured to generate a back bias voltage for the MRAM cell. The control and voltage generation unit comprising a command decoder configured to generate a decoding signal in response to a command output from a memory controller, and a voltage controller and generator configured to generate the back bias voltage with a magnitude based on the decoding signal and a reset signal output from the memory controller. | 05-29-2014 |
20140169086 | COMMON SOURCE SEMICONDUCTOR MEMORY DEVICE - A memory device includes a cell array and a common source line compensation circuit. The cell array includes a plurality of normal cell units connected between a plurality of bit lines and one common source line, respectively. The common source line compensation circuit supplies a plurality of compensation write currents to the common source line to compensate for a plurality of write currents concurrently input into or output from the common source line through the normal cell units. | 06-19-2014 |
20150035032 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING MEMORY CELL ARRAY WITH PSEUDO SEPARATE SOURCE LINE STRUCTURE - A memory cell array of a nonvolatile semiconductor memory device is provided which includes a first memory cell including a first variable resistance element and a first access transistor connected to each other, and having a first node connected to a first bit line and one end of the first variable resistance element and a second node connected to a second bit line and one end of the first access transistor; and a second memory cell including a second variable resistance element and a second access transistor connected to each other, and having a first node connected to the second bit line and one end of the second variable resistance element and a second node connected to one end of the second access transistor, wherein the first and second access transistors are connected to first and second word lines, respectively. | 02-05-2015 |