| Patent application number | Description | Published |
|---|
| 20120107997 | METHOD OF MANUFACTURING SOLAR CELL - In a method of manufacturing a solar cell, a first dopant layer is formed on a lower surface of a substrate and a diffusion-preventing layer is formed on an upper surface of the substrate. Then, the first dopant layer is patterned to expose portions of the lower surface of the substrate, and a second dopant layer is formed on the exposed portion of the lower surface of the substrate. A third dopant layer is formed on the diffusion-preventing layer, and the substrate is heated to diffuse dopants from the first, second, and third dopant layers into the substrate, thereby forming semiconductor areas in the substrate. | 05-03-2012 |
| 20130087192 | PHOTOVOLTAIC DEVICE - A photovoltaic device, and a method of fabricating the same are provided. Here, a base portion and an emitter portion are formed on a surface of a semiconductor substrate. An insulation layer is formed on the base portion and the emitter portion. The insulation layer has a plurality of vias to partially expose the base portion and the emitter portion. A first electrode is formed to contact a region of the emitter portion through at least one of the vias, and a second electrode is formed to contact a region of the base portion through at least another one of the vias. Then, a dicing line is set at a bus electrode portion of the second electrode, and the semiconductor substrate is split into at least two photovoltaic devices at the base portion along the dicing line. | 04-11-2013 |
| 20130092224 | PHOTOELECTRIC DEVICE - A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode. | 04-18-2013 |
| 20130104974 | SOLAR CELL AND MANUFACTURING METHOD THEREOF | 05-02-2013 |
| 20130112253 | SOLAR CELL - A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate. | 05-09-2013 |
| 20130125964 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode. | 05-23-2013 |
| 20130133729 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper. | 05-30-2013 |
| 20130147003 | PHOTOVOLTAIC DEVICE - A photovoltaic device includes a substrate, the substrate having a base region and an emitter region, the base region having a first width and the emitter region having a second width, a first electrode in contact with and electrically connected to the base region, the first electrode having a third width where it overlies the base region, the third width being greater than the first width such that the first electrode overhangs the base region at at least one side thereof, and a second electrode in contact with and electrically connected to the emitter region, the second electrode having a fourth width where it overlies the emitter region, a ratio of the third width to the fourth width being about 0.3 to about 3.4. | 06-13-2013 |
| 20130267059 | METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE - A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. | 10-10-2013 |
| 20140130854 | PHOTOELECTRIC DEVICE AND THE MANUFACTURING METHOD THEREOF - A photoelectric device includes: a semiconductor substrate including monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed on the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon. | 05-15-2014 |
