Patent application number | Description | Published |
20140054580 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - Embodiment of the present invention disclose an array substrate and a manufacturing method thereof, and the manufacturing method of an array substrate comprises the following steps: Step S1: a gate electrode metal layer, an insulating layer and an active layer are deposited successively on a substrate, and gate electrodes, gate lines and an active layer pattern are formed through a first mask process; Step S | 02-27-2014 |
20140091331 | DISPLAY DEVICE, THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode. | 04-03-2014 |
20140117372 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCING METHOD THEREOF - Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source/drain electrode layer thin film using gray tone or half tone masking process, to form at least two data lines, a pixel electrode and source/drain electrodes of the thin film transistor (TFT); after depositing an insulating layer thin film covered the active layer thin film, the source/drain electrodes, the data lines and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning lines cross with the data wires. | 05-01-2014 |
20140183519 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND ELECTRONIC DEVICE - According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device. The method for manufacturing the TFT array substrate comprises: a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process. | 07-03-2014 |
20140273362 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND ARRAY SUBSTRATE - The embodiments of the present invention provide a method for manufacturing a thin film transistor and a method for manufacturing an array substrate. The method for manufacturing the thin film transistor comprises: forming a gate electrode on a transparent substrate; forming a gate insulation layer; forming a transparent semiconductor film and patterning the transparent semiconductor film to form a semiconductor layer with photoresist being remained over the semiconductor layer; from a side of the transparent substrate opposite to the side on which the gate electrode is formed, exposing and developing the remained photoresist by using the gate electrode as a mask to form a channel position photoresist part corresponding to the gate electrode; forming a source/drain metal film and lifting off the channel position photoresist part and the source/drain metal film located over the channel position photoresist part; and patterning the remained source/drain metal film to form a source electrode and a drain electrode. The embodiments of the present invention are suitable to manufacture the product or device containing thin film transistors. | 09-18-2014 |
20150303221 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE COMPRISING ARRAY SUBSTRATE - An embodiment of the disclosure provides an array substrate comprising: a base substrate, an active layer and a transparent electrode disposed on the base substrate, an etch stop layer disposed on the active layer and configured for protecting a portion of the active layer, wherein the active layer, the transparent electrode and the etch stop layer are formed through one patterning process and one doping process, the doped region and the first transparent electrode are made of same material and are disposed on the same layer. | 10-22-2015 |
20150303222 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE - A thin film transistor, an array substrate and a method for fabricating the array substrate, and a display device are disclosed. The thin film transistor comprises a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode, a drain electrode and a protection layer provided on a base substrate, and comprises: a first transparent electrode provided between the source electrode and the semiconductor active layer, corresponding to the source electrode and in direct contact with the source electrode; a second transparent electrode provided between the drain electrode and the semiconductor active layer, corresponding to the drain electrode and in direct contact with the drain electrode, the first transparent electrode is in contact with the semiconductor active layer through a first via provided in the protection layer, the second transparent electrode is in contact with the semiconductor active layer through a second via provided in the protection layer. | 10-22-2015 |
20160005869 | OXIDE THIN FILM TRANSISTOR, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE - Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode. | 01-07-2016 |