Caspary
Daniel Caspary, Abentheuer DE
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20150037534 | METHOD FOR BENDING A COMPOSITE SHEET AND SUCH A BENT COMPOSITE SHEET - The invention relates to a method for bending at least one edge of a composite sheet, which has at least two outer metallic layers and an inner plastic layer, in which the edge of the composite sheet is edge-bent in a first step and is bent into the finished form in at least one further method step. In addition, the invention relates to a correspondingly bent composite sheet. The object of making a method for bending a composite sheet available, in which cracks in the metallic layers of the composite sheet can be prevented and, at the same time, in which a seam can easily be provided, is achieved by using an edge-bending punch, a holding-down device and an edge-bending jaw during the edge-bending operation and by the edge-bending punch having a notch running in the bending direction below the bending edge of the edge-bending punch. | 02-05-2015 |
Dirk Caspary, Dresden DE
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20080197394 | METHODS OF MANUFACTURING SEMICONDUCTOR STRUCTURES - A method of manufacturing semiconductor structures is disclosed. In one embodiment, a first mask is provided above a substrate. The first mask includes first mask lines extending along a first axis. A second mask is provided above the first mask. The second mask includes second mask lines extending along a second axis that intersects the first axis. At least one of the first and second masks is formed by a pitch fragmentation method. Structures may be formed in the substrate, wherein the first and the second mask are effective as a combined mask. The structures may be equally spaced at a pitch in the range of a minimum lithographic feature size for repetitive line structures. | 08-21-2008 |
20080203459 | Method of manufacturing a semiconductor device and semiconductor device - A carrier is structured with isolation regions in a precise fashion. First structures and second structures are formed above a carrier. At least one of the second structures is removed selectively with respect to the first structures. At least one recess in the carrier is formed according to the structure thus obtained. An embodiment of a semiconductor device that may be produced in this way is provided with at least one insulating striplike region and/or a plurality of insulating regions that are arranged at distances from one another along a line. | 08-28-2008 |
Guy Caspary, Haifa IL
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20130007411 | Configurable Allocation of Hardware Resources - Disclosed are various embodiments of configurable allocation of hardware resources. In one embodiment, a processing device includes a configurable communication grid including a plurality of crossbars interconnected by intercommunication paths in a geometric configuration and a plurality of pipeline elements distributed within the configurable communication grid. Each crossbar is designed to direct communications received at an input to a selected output. Each pipeline element is communicatively coupled to an output of a first crossbar adjacent to the pipeline element and an input of a second crossbar adjacent to the pipeline element. In another embodiment, a process matrix includes a plurality of pipeline elements interconnected by a configurable communication grid. The configurable communication grid includes intercommunication paths connecting crossbars in a geometric configuration. The crossbars are configured to implement at least a portion of a hardware pipeline by directing communications between at least a portion of the pipeline elements. | 01-03-2013 |
Nico Caspary, Munich DE
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20150203988 | Silicon Ingot and Method of Manufacturing a Silicon Ingot - A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon over an extraction time period. Boron is added to the molten silicon over at least part of the extraction time period. | 07-23-2015 |
20150349066 | Semiconductor Device, Silicon Wafer and Silicon Ingot - A CZ silicon ingot is doped with donors and acceptors and includes an axial gradient of doping concentration of the donors and of the acceptors. An electrically active net doping concentration, which is based on a difference between the doping concentrations of the donors and acceptors varies by less than 60% for at least 40% of an axial length of the CZ silicon ingot due to partial compensation of at least 20% of the doping concentration of the donors by the acceptors. | 12-03-2015 |
Nico Caspary, Munchen DE
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20160104622 | Method for Manufacturing a Semiconductor Wafer, and Semiconductor Device Having a Low Concentration of Interstitial Oxygen - A method for manufacturing a substrate wafer | 04-14-2016 |
Nico Caspary, Muenchen DE
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20160130722 | METHOD OF MANUFACTURING A SILICON INGOT AND SILICON INGOT - A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period. | 05-12-2016 |
René Caspary, Lubeck DE
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20140171728 | AIR HUMIDIFIER WITH BOIL-OVER PROTECTION - An air humidifier ( | 06-19-2014 |
René-Christian Caspary, Lubeck DE
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20110168181 | DEVICE FOR PRESSURE EQUALIZATION ON A MEDICAL GAS DELIVERY MEANS - A device for passive pressure relief and for reducing the volume flow for an electromechanically driven medical gas delivery means ( | 07-14-2011 |