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Carsten Von Koblinski

Carsten Von Koblinski, Villach AT

Patent application number	Description	Published
20090039501	INTEGRATED CIRCUIT WITH GALVANICALLY BONDED HEAT SINK - An integrated circuit includes a semiconductor substrate, a first electrical contact formed on the semiconductor substrate, and a first heat sink element bonded to the first electrical contact via a galvanic bond.	02-12-2009
20100044885	SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device and manufacturing method. One embodiment provides at least two semiconductor chips. A dielectric material is applied to the at least two semiconductor chips to attach the at least two semiconductor chips to each other. A portion of the dielectric material is selectively removed between the at least two semiconductor chips to form at least one recess in the dielectric material. Metal particles including paste is applied to the at least one recess in the dielectric material.	02-25-2010
20120032295	SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SUCH A DEVICE - A semiconductor device and method for producing such a device is disclosed. One embodiment provides a semiconductor functional wafer having a first and second main surface. Component production processes are performed for producing a component functional region at the first main surface, wherein the component production processes produce an end state that is stable up to at least a first temperature. A carrier substrate is fitted to the first main surface. Access openings are produced to the first main surface. At least one further component production process is performed for producing patterned component functional regions at the first main surface of the functional wafer in the access openings. The end state produced in this process is stable up to a second temperature, which is less than the first temperature.	02-09-2012

Patent applications by Carsten Von Koblinski, Villach AT

Carsten Von Koblinski, Bodensdorf AT

Patent application number	Description	Published
20110304047	Method for Producing a Composite Material, Associated Composite Material and Associated Semiconductor Circuit Arrangements - A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another.	12-15-2011
20120012994	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A GLASS SUBSTRATE - A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.	01-19-2012
20120112365	Semiconductor Packages and Methods For Producing The Same - In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane portion of the isolating container.	05-10-2012
20120126926	Transformer Device and Method for Manufacturing a Transformer Device - A transformer device includes a glass substrate having a first side and a second side arranged opposite the first side. A first recess is formed at the first side of the glass substrate. A second recess is formed at the second side of the glass substrate. The first and second recesses are arranged opposite to each other. A first coil is arranged in the first recess and a second coil is arranged in the second recess.	05-24-2012
20120181640	Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof - In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.	07-19-2012
20120248631	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A GLASS SUBSTRATE - A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.	10-04-2012
20130228905	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A GLASS SUBSTRATE - A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallisation region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallisation region.	09-05-2013
20130234297	SEMICONDUCTOR DEVICE, WAFER ASSEMBLY AND METHODS OF MANUFACTURING WAFER ASSEMBLIES AND SEMICONDUCTOR DEVICES - A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls.	09-12-2013
20130237034	Glass Piece and Methods of Manufacturing Glass Pieces and Semiconductor Devices with Glass Pieces - A source material, which is based on a glass, is arranged on a working surface of a mold substrate. The mold substrate is made of a single-crystalline material. A cavity is formed in the working surface. The source material is pressed against the mold substrate. During pressing a temperature of the source material and a force exerted on the source material are controlled to fluidify source material. The fluidified source material flows into the cavity. Re-solidified source material forms a glass piece with a protrusion extending into the cavity. After re-solidifying, the glass piece may be bonded to the mold substrate. On the glass piece, protrusions and cavities can be formed with slope angles less than 80 degrees, with different slope angles, with different depths and widths of 10 micrometers and more.	09-12-2013
20130328183	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A GLASS SUBSTRATE - A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.	12-12-2013
20130333203	Method for Manufacturing a Transformer Device on a Glass Substrate - A method for manufacturing a transformer device includes providing a glass substrate having a first side and a second side arranged opposite the first side, forming a first recess in the glass substrate at the first side of the glass substrate, forming a second recess in the glass substrate at the second side of the glass substrate opposite to the first recess, forming a first coil in the first recess, and forming a second coil in the second recess.	12-19-2013
20140021610	CHIP PACKAGE AND A METHOD FOR MANUFACTURING A CHIP PACKAGE - A chip package is provided, the chip package including: first encapsulation structure; first passivation layer formed over first encapsulation structure and first electrically conductive layer formed over first passivation layer; at least one chip arranged over first electrically conductive layer and passivation layer wherein at least one chip contact pad contacts first electrically conductive layer; at least one cavity formed in first encapsulation structure, wherein at least one cavity exposes a portion of first passivation layer covering at least one chip contact pad; second encapsulation structure disposed over first encapsulation structure and covering at least one cavity, wherein a chamber region over at least one chip contact pad is defined by at least one cavity and second encapsulation structure; wherein second encapsulation structure includes an inlet and outlet connected to chamber region, wherein inlet and outlet control an inflow and outflow of heat dissipating material to and from chamber region.	01-23-2014
20140167192	Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof - In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.	06-19-2014
20140339694	Semiconductor Devices Having a Glass Substrate, and Method for Manufacturing Thereof - A method for manufacturing semiconductor devices includes providing a stack having a semiconductor wafer and a glass substrate with openings and at least one trench attached to the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor devices. The openings of the glass substrate leave respective areas of the semiconductor devices uncovered by the glass substrate and the trench connects the openings. A metal layer is formed at least on exposed walls of the trench and the openings and on the uncovered areas of the semiconductor devices of the semiconductor wafer. A metal region is formed by electroplating metal in the openings and the trench and by subsequently grinding the glass substrate to remove the trenches. The stack of the semiconductor wafer and the attached glass substrate is cut to separate the semiconductor devices.	11-20-2014

Patent applications by Carsten Von Koblinski, Bodensdorf AT