Carlo A.
Carlo A. Muller, Milan IT
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20100215918 | METHOD FOR FORMING AN ARTICLE HAVING A DECORATIVE SURFACE - The invention refers to a method for forming an article having a decorative surface comprising: a) screen printing an ink composition comprising a curable composition onto at least one major surface of a thermoformable polymeric sheet; b) curing said curable composition to obtain a printed sheet having on at least one major surface an ink comprising a cured composition; and c) thermoforming the printed sheet to obtain a decorated article, wherein said curable composition comprises a polyisocyanate and a component comprising isocyanate reactive groups and wherein said ink composition contains a solvent or solvent blend in which said curable composition is soluble or miscible. | 08-26-2010 |
Carlo A. Pignedoli, Adliswil CH
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20080293259 | METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY - The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×10 | 11-27-2008 |
20100171187 | FORMATION OF HIGH-K GATE STACKS IN SEMICONDUCTOR DEVICES - A method of forming a high-K gate stack for a MOSFET device to control the threshold voltage for the MOSFET device. A first high-K metallic oxide layer is formed on a semiconductor substrate. At least one composite layer is then formed directly on the first layer. The composite layer is composed of a second high-K metallic oxide layer formed directly on a dipole induction layer. The dipole induction layer includes a high-K metallic oxide having higher oxygen vacancy affinity and lower oxygen vacancy diffusivity than the first and second layers. A metallic gate electrode is then formed on the composite layer. Formation of the various layers is such as to position the dipole induction layer of the composite layer between the gate electrode and substrate so as to shift the threshold voltage to a desired level. A high-K gate stack in a MOSFET device formed by the above method is also provided. | 07-08-2010 |
Carlo A. Trugenberger, Geneve CH
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20080215313 | Speech and Textual Analysis Device and Corresponding Method - A speech and textual analysis device and method for forming a search and/or classification catalog. The device is based on a linguistic database and includes a taxonomy table containing variable taxon nodes. The speech and textual analysis device includes a weighting module, a weighting parameter being additionally assigned to each taxon node to register the recurrence frequency of terms in the linguistic and/or textual data that is to be classified and/or sorted. The speech and/or textual analysis device includes an integration module for determining a predefinable number of agglomerates based on the weighting parameters of the taxon nodes in the taxonomy table and at least one neuronal network module for classifying and/or sorting the speech and/or textual data based on the agglomerates in the taxonomy table. | 09-04-2008 |