Caizhong Tian
Caizhong Tian, Hyogo JP
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20090183677 | TEMPERATURE CONTROL DEVICE AND PROCESSING APPARATUS USING THE SAME - Provided are a temperature control device capable of performing a temperature control of, e.g., a chamber wall of a processing apparatus with a high precision; and a processing apparatus using the same. The temperature control device | 07-23-2009 |
20100032094 | CEILING PLATE AND PLASMA PROCESS APPARATUS - A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber. | 02-11-2010 |
20100307685 | MICROWAVE PLASMA PROCESSING APPARATUS - In a microwave plasma processing apparatus, when a surface of a planar antenna | 12-09-2010 |
20110000780 | TOP PLATE OF MICROWAVE PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma generation chamber of a plasma processing apparatus is closed by a top plate | 01-06-2011 |
20130081763 | CEILING PLATE AND PLASMA PROCESS APPARATUS - A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions arranged along a circle in a surface of the ceiling plate so as to form plural radially disposed virtual convex portions in a place between the concave portions, the surface facing toward an inside of the process chamber. A thickness of places where the concave portions are formed in the ceiling plate and another thickness of other places where the concave portions are not formed in the ceiling plate are determined so that the number of propagation modes of microwaves is different. | 04-04-2013 |
Caizhong Tian, Amagasaki-Shi JP
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20100252412 | PLASMA PROCESSING APPARATUS AND METHOD FOR ADJUSTING PLASMA DENSITY DISTRIBUTION - In the plasma processing apparatus | 10-07-2010 |
20130292047 | MANUFACTURING METHOD OF TOP PLATE OF PLASMA PROCESSING APPARATUS - A manufacturing method of a top plate hermetically attached to an upper opening of a tubular shaped container body for forming a processing container of a plasma processing apparatus is provided. The manufacturing method includes the steps of; preparing a top plate body comprised of a dielectric body for transmitting an electromagnetic wave, and having a gas ejection hole for ejecting a gas into the processing container; forming a discharge prevention member having a discharge prevention member body comprised of a dielectric body having a permeability, and a dense member comprised of a dielectric body without a permeability covering at least a side face of the discharge prevention member body; and attaching the discharge prevention member in the gas ejection hole of the top plate body. | 11-07-2013 |
Caizhong Tian, Amagasaki JP
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20090266487 | MICROWAVE INTRODUCTION DEVICE - A microwave introduction device includes a microwave generator for generating a microwave of a predetermined frequency, a mode converter for converting the microwave into a predetermined oscillation mode, a planar antenna member arranged toward a predetermined space, and a coaxial waveguide connecting the mode converter with the planar antenna member to propagate the microwave. A central conductor of the coaxial waveguide is formed in a cylindrical shape, an inner diameter D | 10-29-2009 |
Caizhong Tian, Tokyo JP
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20090050052 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus capable of preventing an unnecessary adhesion film from being deposited in a processing chamber using plasma. The plasma processing apparatus | 02-26-2009 |
20090242130 | PLASMA PROCESSING APPARATUS - The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate. | 10-01-2009 |
Caizhong Tian, Amagasaki City JP
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20080254220 | Plasma processing apparatus - A plasma processing apparatus includes a vacuum processing container, and a placing table for placing an object which is arranged in the container and is to be processed. The processing container includes a tubular container body having an upper opening, and a dielectric top plate attached hermetically to the upper opening of the body and transmitting an electromagnetic wave. The plasma processing apparatus further includes an electromagnetic wave supplying system for supplying an electromagnetic wave for generating plasma into the container through the top plate, and a gas supplying system for supplying a gas containing a processing gas into the container. A gas ejecting hole for ejecting the gas supplied from the gas supplying system into the container is formed on the top plate. A discharge prevention member having a permeability is arranged in each ejection hole. | 10-16-2008 |
Caizhong Tian, Hyogo-Ken JP
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20110114021 | PLANAR ANTENNA MEMBER AND PLASMA PROCESSING APPARATUS INCLUDING THE SAME - The present invention is a planar antenna member configured to introduce electromagnetic waves generated by an electromagnetic-wave generating source into a processing vessel of a plasma processing apparatus, the planar antenna member comprising: a base member of a circular plate shape, made of a conductive material; and a plurality of through-holes formed in the base member of a circular plate shape, the through-holes being configured to radiate the electromagnetic waves; wherein: the through-holes include a plurality of first through-holes which are arranged on a circumference of a circle whose center corresponds to a center of the planar antenna member, and a plurality of second through-holes which are arranged concentrically with the circle outside the first through-holes; a ratio L | 05-19-2011 |
Caizhong Tian, Osaka City JP
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20130302992 | APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT - An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table. | 11-14-2013 |
Caizhong Tian, Osaka JP
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20140166205 | PROCESS MONITORING DEVICE FOR USE IN SUBSTRATE PROCESS APPARATUS, PROCESS MONITORING METHOD AND SUBSTRATE PROCESSING APPARATUS - A process monitoring device | 06-19-2014 |
20140312767 | DIELECTRIC WINDOW FOR PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE - A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess. | 10-23-2014 |