Byungkwan

Byungkwan Cho, Daejeon KR

Patent application number	Description	Published
20150125918	ACID-RESISTANCE IN KLUYVEROMYCES MARXIANUS BY ENGINEERING TRANSCRIPTIONAL FACTOR - A microorganism with improved acid-resistance. A microorganism capable of efficiently producing 3-HP, and methods for producing an organic acid.	05-07-2015

Byungkwan Jang, Yongin-Si KR

Patent application number	Description	Published
20130155833	APPARATUS AND METHOD FOR I/Q OFFSET CANCELLATION IN SC-FDMA SYSTEM - The present invention relates to an apparatus and a method for eliminating I/Q offset in a receiver of a SC-FDMA system which improves performance of the system by accurate measurement and cancellation of I/Q offset in a receiver of a SC-FDMA system operating in a	06-20-2013
20140294057	APPARATUS AND METHOD OF COMPENSATING FOR I/Q IMBALANCE IN DIRECT UP-CONVERSION SYSTEM - An apparatus and a method of compensating for an I/Q imbalance in a direct up-conversion system prevents the performance of the system from being deteriorated by efficiently compensating for an I/Q timing skew, an I/Q phase imbalance, and an I/Q gain imbalance by using a characteristic of an OFDM scheme in an Orthogonal Frequency Domain Multiple (Access) (OFDM(A)) system using a direct up-conversion scheme. According to the apparatus and the method of compensating for an I/Q imbalance in the direct up-conversion system of the present invention, an OFDM(A) system using a direct up-conversion scheme may efficiently compensate for I/Q timing skew, I/Q phase imbalance, and I/Q gain imbalance by using a characteristic of an OFDMA scheme, so that a performance of the system is prevented from being deteriorated.	10-02-2014

Byungkwan You, Seoul KR

Patent application number	Description	Published
20140231899	METHODS OF MANUFACTURING THREE-DIMENSIONAL SEMICONDUCTOR DEVICES - Methods of manufacturing three-dimensional semiconductor devices that may include forming a first spacer on a sidewall inside a first opening formed in a first stack structure, forming a sacrificial filling pattern on the spacer to fill the first opening, forming a second stack structure including a second opening exposing the sacrificial filling pattern on the first stack structure, forming a second spacer on a sidewall inside the second opening, removing the sacrificial filling pattern and removing the first spacer and the second spacer.	08-21-2014