Patent application number | Description | Published |
20090016032 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH FLEXIBLE SUBSTRATE AND RECESSED PACKAGE - An integrated circuit package system includes: providing a flexible circuit substrate having a fold; mounting an integrated circuit or an integrated circuit package over the flexible circuit substrate and connected to the flexible circuit substrate with interconnects; and encapsulating the integrated circuit or integrated circuit package with a recessed encapsulation having a first level and a second level, the second level having the flexible circuit substrate folded thereover. | 01-15-2009 |
20090016033 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH FLEXIBLE SUBSTRATE AND MOUNDED PACKAGE - An integrated circuit package system includes: providing a flexible circuit substrate; mounting an integrated circuit or an integrated circuit package over the flexible circuit substrate and connected to the flexible circuit substrate with interconnects; and encapsulating the integrated circuit or integrated circuit package with a mounded encapsulation having a first level and a second level, the second level having the flexible circuit substrate folded thereover. | 01-15-2009 |
20090020893 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH TRIPLE FILM SPACER - An integrated circuit package in package system includes: providing a substrate with a first wire-bonded die mounted thereover, and connected to the substrate with bond wires; mounting a triple film spacer above the first wire-bonded die, the triple film spacer having fillers in a first film and in a third film, and having a second film separating the first film and the third film, and the bond wires connecting the first wire-bonded die to the substrate are embedded in the first film; and encapsulating the first wire-bonded die, the bond wires, and the triple film spacer with an encapsulation. | 01-22-2009 |
20090146315 | INTEGRATED CIRCUIT PACKAGE-ON-PACKAGE STACKING SYSTEM AND METHOD OF MANUFACTURE THEREOF - An integrated circuit package-on-package stacking system includes: providing a first integrated circuit package, mounting a metalized interposer substrate over the first integrated circuit package, attaching a stiffener integrated with the metalized interposer substrate and having dimensions within package extents, and attaching a second integrated circuit package on the metalized interposer substrate adjacent the stiffener. | 06-11-2009 |
20090161330 | CHIP CARRIER AND FABRICATION METHOD - A substrate having a ground plane, a first side, and a second side is provided. A via that electrically connects the first side to the second side is formed. A printed wire is formed on the first side, and a printed wire is formed on the second side. A passive component is formed on the first side. The passive component is formed free of the ground plane. An active component is attached to the first side. | 06-25-2009 |
20090243083 | Wafer Integrated with Permanent Carrier and Method Therefor - A semiconductor device has a wafer for supporting the device and a conductive layer formed over a top surface of the wafer. A carrier wafer is permanently bonded over the conductive layer. Within the wafer and the carrier wafer, an interconnect structure is formed. The interconnect structure includes a first via formed in the wafer exposing the conductive layer, a second via formed in the carrier wafer exposing the conductive layer, a first metal layer deposited over the first via, the first metal layer in electrical contact with the conductive layer, and a second metal layer deposited over the second via, the second metal layer in electrical contact with the conductive layer. First and second passivation layers are deposited over the first and second metal layers. The first or second passivation layer has an etched portion to expose a portion of the first metal layer or second metal layer. | 10-01-2009 |
20110018084 | ENCAPSULANT CAVITY INTEGRATED CIRCUIT PACKAGE SYSTEM AND METHOD OF FABRICATION THEREOF - A method for fabricating an encapsulant cavity integrated circuit package system includes: forming a first integrated circuit package with an inverted bottom terminal having an encapsulant cavity and an interposer, and attaching a component on the interposer in the encapsulant cavity. | 01-27-2011 |
20110089566 | WIRE BONDING STRUCTURE AND METHOD THAT ELIMINATES SPECIAL WIRE BONDABLE FINISH AND REDUCES BONDING PITCH ON SUBSTRATES - A semiconductor package has a semiconductor die disposed on a substrate. A bond wire is connected between a first bonding site on the semiconductor die and a second bonding site on the substrate. The first bonding site is a die bond pad; the second bonding site is a stitch bond. The second bonding site has a bond finger formed on the substrate, a conductive layer in direct physical contact with the bond finger, and a bond stud coupled to the bond wire and in direct physical contact with the conductive layer to conduct an electrical signal from the semiconductor die to the bond finger. The bond finger is made of copper. The conductive layer is made of copper or gold. The bond stud is made of gold and overlies a side portion and top portion of the copper layer. | 04-21-2011 |
20110101509 | Wafer Integrated With Permanent Carrier and Method Therefor - A semiconductor device has a wafer for supporting the device and a conductive layer formed over a top surface of the wafer. A carrier wafer is permanently bonded over the conductive layer. Within the wafer and the carrier wafer, an interconnect structure is formed. The interconnect structure includes a first via formed in the wafer that exposes the conductive layer, a second via formed in the carrier wafer that exposes the conductive layer, a first metal layer deposited over the first via, the first metal layer in electrical contact with the conductive layer, and a second metal layer deposited over the second via, the second metal layer in electrical contact with the conductive layer. First and second insulation layers are deposited over the first and second metal layers respectively. The first or second insulation layer has an etched portion to expose a portion of the first or second metal layer. | 05-05-2011 |
20110233747 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH STACKING OPTION AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: fabricating a base package substrate having a component side and a system side; coupling a first integrated circuit die on the component side; coupling stacking interconnects on the component side around the first integrated circuit die; forming a package body on the component side, the first integrated circuit die, and the stacking interconnects; forming vertical insertion cavities through the package body and on the stacking interconnects; and forming a trench, in the package body, adjacent to the vertical insertion cavities for reducing a package warping stress. | 09-29-2011 |
20120007217 | ENCAPSULANT CAVITY INTEGRATED CIRCUIT PACKAGE SYSTEM AND METHOD OF FABRICATION THEREOF - A method for fabricating an encapsulant cavity integrated circuit package system includes: providing an interposer; forming a first integrated circuit package with an inverted bottom terminal having an encapsulant cavity and the interposer; and attaching a component on the interposer in the encapsulant cavity. | 01-12-2012 |
20120146192 | INTEGRATED CIRCUIT MOUNTING SYSTEM WITH PADDLE INTERLOCK AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit mounting system includes: providing a die paddle with a component side having a die mount area and a recess with more than one geometric shape; applying an adhesive on the die mount area and in a portion of the recess; and mounting an integrated circuit device with an inactive side directly on the adhesive. | 06-14-2012 |
20120217659 | INTEGRATED CIRCUIT PACKAGE WITH MOLDED CAVITY - An integrated circuit package system includes a base substrate, attaching a base die over the base substrate, attaching an integrated interposer having interposer circuit devices, over the base die, and forming a package system encapsulant having an encapsulant cavity over the integrated interposer. | 08-30-2012 |
20120286429 | Semiconductor Device and Method of Singulating Thin Semiconductor Wafer on Carrier Along Modified Region Within Non-Active Region Formed by Irradiating Energy - A semiconductor device comprises a carrier including an adhesive disposed over the carrier. The semiconductor device further comprises a semiconductor wafer including a plurality of semiconductor die separated by a non-active region. A plurality of bumps is formed over the semiconductor die. The semiconductor wafer is mounted to the carrier with the adhesive disposed around the plurality of bumps. Irradiated energy is applied to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die. The semiconductor wafer is singulated along the modified region by applying stress to the semiconductor wafer. The adhesive is removed from around the plurality of bumps after singulating the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die comprising through silicon vias. The modified region optionally includes a plurality of vertically stacked modified regions. | 11-15-2012 |
20120326331 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH VERTICAL INTERCONNECTS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; attaching vertical interconnects along a periphery of the first substrate; mounting an integrated circuit over the first substrate, the integrated circuit surrounded by the vertical interconnects; and mounting a second substrate directly on the vertical interconnects and the integrated circuit. | 12-27-2012 |
20130069252 | Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus - A semiconductor device has a first semiconductor die including an active region formed on a surface of the first semiconductor die. The active region of the first semiconductor die can include a sensor. An encapsulant is deposited over the first semiconductor die. A conductive layer is formed over the encapsulant and first semiconductor die. An insulating layer can be formed over the first semiconductor die. An opening is formed in the insulating layer over the active region. A transmissive layer is formed over the first semiconductor die including the active region. The transmissive layer includes an optical dielectric material or an optical transparent or translucent material. The active region is responsive to an external stimulus passing through the transmissive layer. A plurality of bumps is formed through the encapsulant and electrically connected to the conductive layer. A second semiconductor die is disposed adjacent to the first semiconductor die. | 03-21-2013 |
20130221452 | Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus - A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A conductive layer can be formed over the encapsulant and the semiconductor die. A transmissive layer can be formed over the semiconductor die. An interconnect structure can be formed through the encapsulant and electrically connected to the conductive layer, whereby the interconnect structure is formed off to only one side of the semiconductor die. | 08-29-2013 |
20140183718 | Semiconductor Device and Method of Using a Standardized Carrier to Form Embedded Wafer Level Chip Scale Packages - A semiconductor device includes a standardized carrier. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. The semiconductor wafer is singulated through a first portion of the base semiconductor material to separate the semiconductor die. The semiconductor die are disposed over the standardized carrier. A size of the standardized carrier is independent from a size of the semiconductor die. An encapsulant is deposited over the standardized carrier and around the semiconductor die. An interconnect structure is formed over the semiconductor die while leaving the encapsulant devoid of the interconnect structure. The semiconductor device is singulated through the encapsulant. Encapsulant remains disposed on a side of the semiconductor die. Alternatively, the semiconductor device is singulated through a second portion of the base semiconductor and through the encapsulant to remove the second portion of the base semiconductor and encapsulant from the side of the semiconductor die. | 07-03-2014 |
20140183761 | Semiconductor Device and Method of Forming Embedded Wafer Level Chip Scale Packages - A semiconductor device includes a semiconductor die and an encapsulant deposited over and around the semiconductor die. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. A groove is formed in the base semiconductor material. The semiconductor wafer is singulated through the groove to separate the semiconductor die. The semiconductor die are disposed over a carrier with a distance of 500 micrometers (μm) or less between semiconductor die. The encapsulant covers a sidewall of the semiconductor die. A fan-in interconnect structure is formed over the semiconductor die while the encapsulant remains devoid of the fan-in interconnect structure. A portion of the encapsulant is removed from a non-active surface of the semiconductor die. The device is singulated through the encapsulant while leaving encapsulant disposed covering a sidewall of the semiconductor die. The encapsulant covering the sidewall includes a thickness of 50 μm or less. | 07-03-2014 |