Buonassisi
Anthony Buonassisi, Cambridge, MA US
Patent application number | Description | Published |
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20110073869 | METHOD TO REDUCE DISLOCATION DENSITY IN SILICON USING STRESS - A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations. | 03-31-2011 |
20110136348 | PHONON-ENHANCED CRYSTAL GROWTH AND LATTICE HEALING - A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice. | 06-09-2011 |
Anthony Buonassisi, San Diego, CA US
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20100213406 | Internal gettering by metal alloy clusters - The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described. | 08-26-2010 |
John Buonassisi, Downers Grove, IL US
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20130327067 | METHOD FOR EFFICIENTLY DELIVERING LIQUID ARGON TO A FURNACE BY RE-CONDENSATION IN A PHASE SEPARATOR - A method of improving the efficiency in delivery of a cryogenic liquid to the surface of a metal body in a furnace, the method comprising the steps of delivering a liquid cryogen ( | 12-12-2013 |
Tonio Buonassisi, Cambridge, MA US
Patent application number | Description | Published |
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20090184382 | METHOD TO REDUCE DISLOCATION DENSITY IN SILICON - A crystalline material structure is provided. The crystalline material structure includes a semiconductor structure being annealed at temperatures above the brittle-to-ductile transition temperature of the semiconductor structure, and cooled in an approximately linear time-temperature profile down to approximately its respective transition temperature T | 07-23-2009 |
20130288463 | METHOD FOR PRODUCING THIN LAYERS OF CRYSTALLINE OR POLYCRYSTALLINE MATERIALS - Method for making thin crystalline or polycrystalline layers. The method includes electrochemically etching a crystalline silicon template to form a porous double layer thereon, the double layer including a highly porous deeper layer and a less porous shallower layer. The shallower layer is irradiated with a short laser pulse selected to recrystallize the shallower layer resulting in a crystalline layer. Silicon is deposited on the recrystallized shallower layer and the silicon is irradiated with a short laser pulse selected to crystalize the silicon leaving a layer of crystallized silicon on the template. Thereafter, the layer of crystallized silicon is separated from the template. The process of the invention can be used to make optoelectronic devices. | 10-31-2013 |
20140186620 | FABRICATION AND PASSIVATION OF SILICON SURFACES - Embodiments described herein are related to methods for processing substrates such as silicon substrates. In some cases, the method may provide the ability to passivate a silicon surface at relatively low temperatures and/or in the absence of a solvent. Methods described herein may be useful in the fabrication of a wide range of devices, including electronic devices such as photovoltaic devices, solar cells, organic light-emitting diodes, sensors, and the like. | 07-03-2014 |