Patent application number | Description | Published |
20090057709 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer. | 03-05-2009 |
20090090921 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer. | 04-09-2009 |
20090095965 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer. | 04-16-2009 |
20090243496 | APPARATUS AND METHOD OF DRIVING BACKLIGHT UNIT AND DISPLAY APPARATUS EMPLOYING THE SAME - An apparatus and a method of driving a backlight unit and a display apparatus employing the same. Wherein a driving current, which is divided in a step-by-step fashion, is sequentially changed and output according to a current control signal. The current control signal is divided into low levels and high levels that are consecutively and repeatedly applied to a backlight controller. The driving current is reduced from a reference current corresponding to a number of the high levels during a time period that starts when the low level is applied for at least a first reference time interval and ends when the high level is applied for at least a second reference time interval. | 10-01-2009 |
20100065865 | METHOD OF FORMING NITRIDE SEMICONDUCTOR AND ELECTRONIC DEVICE COMPRISING THE SAME - A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm | 03-18-2010 |
20110136207 | Mutated Nucleotide Sequences of Batroxobin, Mutated Alpha Factor Secretion Signal Sequence and Processes for Preparing Batroxobin Using the Same - The present invention relates to a batroxobin-encoding nucleotide sequence and/or a mutated α-factor secretion signal sequence, and a vector and a transformant using the same. The batroxobin-encoding nucleotide sequence of this invention exhibits an excellent expression efficiency in yeast, particular | 06-09-2011 |
20110200951 | METHOD FOR REMOVING PHOTORESIST PATTERN - Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern. | 08-18-2011 |
20120167824 | CVD APPARATUS - A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe. | 07-05-2012 |
20120171815 | CVD APPARATUS AND METHOD OF FORMING SEMICONDUCTOR SUPERLATTICE STRUCTURE USING THE SAME - Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers. | 07-05-2012 |
20120270322 | SHUTTLE VECTORS FOR MYCOBACTERIA-ESCHERICHIA COLI AND USES THEREOF - The present disclosure provides a DNA molecule capable of replication in Mycobacteria having a nucleic acid sequence as disclosed in SEQ ID NO: 1, a shuttle vector constructed using it and a transformed cells containing the present vector. The vector of about 18 kb of the present disclosure contains 16 ORFs, a replication origin and a rep-like protein essential for replication. Therefore, the plasmid of the present disclosure can be utilized as a gene delivery system/research, and also in a therapeutic system such as immune therapeutics by effectively delivering proteins or heterologous DNA and expressing the encoded DNA in cells. | 10-25-2012 |
20120309000 | MYCOBACTERIA-DERIVED DNA MISMATCH REPAIR NUCLEOTIDE SEQUENCES AND USES THEREOF - The present disclosure provides an isolated DNA molecule derived from Mycobacteria having a DNA mismatch repair function represented by a nucleic acid sequence as disclosed in SEQ ID NO: 1 or 2. Also provided is a promoter sequence having SEQ ID NO: 3, and a recombinant vector comprising the isolated DNA of the present disclosure and a promoter operatively linked to the DNA molecule. The isolated DNA molecule of the present disclosure is classified as MutS4A and MutS4 and confers cells with resistance to UV and macrophages when transformed into the cells. Further it increases the frequency of homologous recombination and the genetic stability of a heterologous plasmid in cells. | 12-06-2012 |
20120322188 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate. | 12-20-2012 |
20130014694 | METHOD OF GROWING SEMICONDUCTOR EPITAXIAL THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAMEAANM MAENG; Jong SunAACI GwangjuAACO KRAAGP MAENG; Jong Sun Gwangju KRAANM KIM; Bum JoonAACI SeoulAACO KRAAGP KIM; Bum Joon Seoul KRAANM RYU; Hyun SeokAACI SuwonAACO KRAAGP RYU; Hyun Seok Suwon KRAANM LEE; Jung HyunAACI AnsanAACO KRAAGP LEE; Jung Hyun Ansan KRAANM KIM; Ki SungAACI SuwonAACO KRAAGP KIM; Ki Sung Suwon KR - A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers. | 01-17-2013 |
20130020555 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITING DEVICE - A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of Al | 01-24-2013 |
20130023080 | CHEMICAL VAPOR DEPOSITION AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE USING CHEMICAL VAPOR DEPOSITION - A chemical vapor deposition (CVD) method includes forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a second semiconductor layer on the first semiconductor layer at a second process temperature. Also, a method of manufacturing a light-emitting device (LED) includes: forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a quantum barrier layer on the quantum well layer at a second process temperature. | 01-24-2013 |
20130037801 | LIGHT EMITTING DIODE CHIP - A light emitting diode (LED) chip including: a substrate; and a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, sequentially deposited on the substrate, in which when a length of the substrate is L and a width of the substrate is W, L/W>10. | 02-14-2013 |
20130099248 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer. | 04-25-2013 |
20130113006 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device include an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a first p-type semiconductor layer disposed on the active layer. The first p-type semiconductor layer has an uneven structure formed on a surface thereof. A second p-type semiconductor layer has an impurity concentration higher than that of the first p-type semiconductor layer. The second p-type semiconductor layer is disposed on the first p-type semiconductor layer and has an uneven structure formed on a surface thereof. A reflective metal layer is formed on the second p-type semiconductor layer. | 05-09-2013 |
20130214308 | SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS - A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells. | 08-22-2013 |
20130221398 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure. | 08-29-2013 |
20130302911 | COMPOSITION FOR DETECTING PROTEINS CONTAINING TYROSINE OXIDE-COUPLED BIOMATERIAL - Provided is a composition for detecting a protein, containing a tyrosine oxide-coupled biomaterial. Various diseases may be easily and rapidly diagnosed by easily detecting the composition containing a tyrosine oxide-coupled biomaterial according to the present invention, by identifying a color of the protein bound with a tyrosine oxide-coupled biomaterial prepared by binding tyrosine oxide, which is a natural pigment present in a living body, with the biomaterial. Accordingly, the composition of the present invention may be used to easily and rapidly diagnose various diseases in real time in an operating room, and may usefully replace conventional histological analysis without a secondary antibody reaction and a final operation of color expression. | 11-14-2013 |
20140235005 | METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE THEREWITH - A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration. | 08-21-2014 |