Patent application number | Description | Published |
20080196659 | METHOD AND APPARATUS FOR CONTINUOUS PROCESSING OF BUFFER LAYERS FOR GROUP IBIIIAVIA SOLAR CELLS - A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a deposition chamber by heating the surface of the solar cell absorber to cause the transfer of heat from the solar cell absorber layer to at least a portion of the process solution that is in contact with the surface. Used solution is cooled, and replenished in a solution container and redirected into the deposition chamber. | 08-21-2008 |
20080196756 | ROLL-TO-ROLL INTEGRATION OF THIN FILM SOLAR MODULES - A photovoltaic module which has at least two solar cells, and a method and system to manufacture such photovoltaic modules. The solar cells are disposed on a surface of an insulating carrier film and an isolation structure is formed between the solar cells to electrically isolate them. A conductor structure such as conductive fingers and busbars is formed on the module. The fingers are formed substantially on the top transparent conductive layer of the cells and the busbar is formed substantially over the insulation structure. The busbar electrically connects the top transparent conductive layer of one of the cells to the conductive base of the other cell. | 08-21-2008 |
20080202584 | THIN FILM SOLAR CELL MANUFACTURING AND INTEGRATION - A method of forming a Group IBIIIAVIA solar cell absorber which includes an active portion and an electrically resistive portion. The absorber is interposed between a base layer and a transparent conductive layer. The electrically resistive portion increases resistance between the base layer and a connector layer that is formed on the transparent conductive layer. The connector layer comprises the busbar and the fingers of the solar cell. The busbar is preferably placed over the electrically resistive portion while the fingers extend over the active portion of the absorber layer. | 08-28-2008 |
20080210295 | PROCESSING METHOD AND APPARATUS FOR GROUP IBIIIAVIA SEMICONDUCTOR LAYER GROWTH - A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partially reacted. After the dopant structure is formed on the partially reacted precursor layer, the dopant structure and partially reacted precursor layer is fully reacted. The dopant structure includes a dopant material such as Na. | 09-04-2008 |
20090020437 | Method and system for controlled material removal by electrochemical polishing - A method and apparatus for electropolishing a conductive layer on a wafer is provided. The apparatus includes an electrode and a conductive member having openings permitting an electropolishing solution to flow through it. Surface of the conductive member includes a surface profile. During the electropolishing process, the surface of the conductive element is placed across from the conductive layer and a potential difference is applied between the conductive layer and the electrode. The process forms a conductive layer profile of the conductive layer. | 01-22-2009 |
20090035882 | METHOD AND APPARATUS FOR AFFECTING SURFACE COMPOSITION OF CIGS ABSORBERS FORMED BY TWO-STAGE PROCESS - A method and system to modify a surface composition of thin film Group IBIIIA VIA solar cell absorbers having non-uniformly distributed Group IIIA materials or graded materials, such as Indium (In), gallium (Ga) and aluminum (Al). The graded materials distribution varies between the surface and the bottom of the absorber layer such that a molar ratio of (Ga+Al)/(Ga+Al+In) is the highest at the bottom of the absorber layer and the lowest at the surface of the absorber. Within the bulk of the absorber, the molar ratio gradually changes between the bottom and the surface of the absorber. In one embodiment, the surface composition of a graded absorber layer may be modified by removing a top portion or slice of the absorber layer, where the molar ratio is low so as to expose the inner portions of the absorber layer having a higher molar ratio of graded materials. | 02-05-2009 |
20090050208 | METHOD AND STRUCTURES FOR CONTROLLING THE GROUP IIIA MATERIAL PROFILE THROUGH A GROUP IBIIIAVIA COMPOUND LAYER - A method is provided for forming a Group IBIIIAVIA solar cell absorber layer including indium (In) and gallium (Ga) that are distributed substantially uniformly between the top surface and the bottom surface of the absorber layer. In one embodiment method includes forming a precursor by depositing a metallic layer including copper (Cu), indium (In) and gallium (Ga) on the base, and depositing a film comprising selenium (Se) and tellurium (Te) on the metallic layer. In the precursor, the molar ratio of Te to Ga is equal to or less than 1. In the following step, the precursor is heated to a temperature range of 400-600° C. to form the Group IBIIIAVIA solar cell absorber layer. | 02-26-2009 |
20090078313 | SUBSTRATE PREPARATION FOR THIN FILM SOLAR CELL MANUFACTURING - A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to reduce the surface roughness such as protrusions that cause shunts. In one embodiment, the surface roughness is reduced by coating surface with a thin silicon dioxide which fills the cavities and recesses around the protrusions and thereby reducing the surface roughness. After the silicon dioxide film is formed, a contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base. | 03-26-2009 |
20090092744 | Roll to Roll Evaporation Tool for Solar Absorber Precursor Formation - An evaporation tool for forming a dopant structure on a front surface of a continuous workpiece, wherein the front surface includes a precursor layer to form Group IBIIIAVIA absorbers for solar cells and the dopant structure is used to introduce dopants into the precursor layer. The tool includes at least a first vapor source station to deposit a Group VIA material, such as Se, and a second vapor station to deposit a dopant material, such as Na, onto the continuous workpiece. A moving assembly of the tool holds and moves the continuous workpiece within the tool by feeding the continuous workpiece from a first end and taking up from a second end of the tool. A support assembly of the tool contacts a back surface of the continuous workpiece to remove the heat from and apply tension to the continuous workpiece during the process. | 04-09-2009 |
20090117684 | METHOD AND APPARATUS FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYERS - A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber. | 05-07-2009 |
20090148598 | Methods and Apparatus to Provide Group VIA Materials to Reactors for Group IBIIIAVIA Film Formation - Processes and apparatus are described that form a solar cell absorber on a surface of a workpiece by reacting a precursor layer disposed on the surface of the workpiece with an absorber constituent vapor in a heating chamber. The absorber constituent material is delivered from an absorber constituent material delivery system in molten form into a container in the heating chamber and vaporized to be used during the reaction. | 06-11-2009 |
20090148669 | METHODS STRUCTURES AND APPARATUS TO PROVIDE GROUP VIA AND IA MATERIALS FOR SOLAR CELL ABSORBER FORMATION - A process and apparatus which form a solar cell absorber on a surface of a workpiece as the workpiece and a carrier are advanced through a rapid thermal processing (RTP) chamber. In one embodiment, the surface of the workpiece includes a precursor layer and an absorber constituent is disposed on the carrier. Initially an absorber constituent vapor can be formed in the RTP chamber by advancing the carrier into the RTP chamber to vaporize the absorber constituent from the carrier. The workpiece with the precursor layer is then moved into the RTP chamber to react the absorber constituent vapor and the precursor layer to form an absorber layer on the workpiece. | 06-11-2009 |
20090159119 | TECHNIQUE AND APPARATUS FOR MANUFACTURING FLEXIBLE AND MOISTURE RESISTIVE PHOTOVOLTAIC MODULES - An apparatus and method of making moisture resistant solar cells, strings and modules is provided. The method includes reducing the roughness of the finger patterns by coating them fully or partially with a surface preparation film. The surface preparation film firmly attaches itself to underlying finger patterns and electrical leads while forming a smooth surface on which a moisture barrier film is subsequently deposited. Process flows to obtain moisture resistive solar cells, solar cell strings are described. | 06-25-2009 |
20090162969 | METHOD AND APPARATUS TO FORM SOLAR CELL ABSORBER LAYERS WITH PLANAR SURFACE - A method and a system are provided for forming planar absorber layers or structures by planarizing and reacting precursor layers in a reactor. A precursor structure is first formed over the front surface of a foil substrate and then planarized through application of pressure by a smooth surface while heated to a first temperature range to obtain a planar layer. The planar layer may be only partially reacted. The planar layer is further reacted at a second temperature range to form a fully or completely reacted planar absorber layer. The planar absorber layer may include at least one Group IB material, at least one Group IIIA material and at least one Group VIA material. The planar absorber layer may be a Group IBIIIAVIA compound layer. | 06-25-2009 |
20090173634 | EFFICIENT GALLIUM THIN FILM ELECTROPLATING METHODS AND CHEMISTRIES - The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt. | 07-09-2009 |
20090183675 | REACTOR TO FORM SOLAR CELL ABSORBERS - A roll-to-roll or reel-to-reel RTP tool including a reactor having a continuous insert placed in a primary gap of the reactor is provided. The primary gap of the reactor is defined by peripheral reactor walls including a top reactor wall, a bottom reactor wall and side reactor walls. The continuous insert includes a continuous process gap through which a continuous workpiece travels between an entry opening and an exit opening of the insert. An inner space exists between at least one of the insert walls and at least a portion of the peripheral reactor walls that make up the primary gap. At least one gas inlet is connected to the inner space, and at least one exhaust opening connects the process gap as well as the inner space to outside the reactor and carries any gaseous products to outside the process gap and the primary gap of the reactor. Sealable doors or web valves seal the entrance and the exit of the process gap when needed before or after the process, especially when the continuous workpiece stops moving. | 07-23-2009 |
20090188808 | INDIUM ELECTROPLATING BATHS FOR THIN LAYER DEPOSITION - Indium (In) electroplating solutions which are used to deposit compositionally pure, uniform, substantially defect free and smooth In films with near 100% plating efficiency and repeatability. In one embodiment the plating solution includes an In source, citric acid and its conjugate pair salt and a solvent. At a pH value of below 4.0, sub-micron thick In layers with close to 100% purity at close to 100% plating efficiency are produced. Such In layers are used in fabrication of electronic devices such as thin film solar cells. | 07-30-2009 |
20090199895 | METHOD FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYER WITH OPTIMIZED GALLIUM CONTENT AT ITS SURFACE - A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including at least Cu and In formed on a base, a separator layer including Se is formed on the metallic film, a metallic source layer substantially including Ga formed on the separator layer, and a cap layer substantially including Se formed on the source layer. | 08-13-2009 |
20090203165 | METHOD TO IMPROVE FLEXIBLE FOIL SUBSTRATE FOR THIN FILM SOLAR CELL APPLICATIONS - A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base. | 08-13-2009 |
20090246908 | ROLL-TO-ROLL PROCESSING METHOD AND TOOLS FOR ELECTROLESS DEPOSITION OF THIN LAYERS - A deposition method and a system are provided to deposit a CdS buffer layer on a surface of a solar cell absorber layer of a flexible workpiece from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited from the deposition solution while the flexible workpiece is heated and elastically shaped by a heated shaping plate to retain the process solution on the solar cell absorber layer. The flexible workpiece is elastically shaped by pulling a back surface of the flexible workpiece into a cavity area in the heated shaping plate using an attractive force. | 10-01-2009 |
20090255461 | Apparatus for Simultaneous Roll-to-Roll Wet Processing of Two Workpieces Disposed Within a Single Chamber - A system is described to deposit a buffer layer onto exposed surfaces of two different solar cell absorber layers of two different flexible workpieces from a process solution including all chemical components of the buffer layer material. The buffer layer is deposited from the process or deposition solution while the flexible workpieces are simultaneously heated and processed within a chamber in a face to face manner as the process solution is flown through a process gap formed between the exposed surfaces of the two solar cell absorber layers. | 10-15-2009 |
20090266398 | Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells - An apparatus for and a method of interconnecting at least two solar cells using contact areas which are formed on the conductive substrates of the solar cells is described. The contact areas are formed by a material removal process which removes high resistance surface layers of the conductive substrates at the contact areas. A stringing process serially interconnects the solar cells by connecting each contact area that is cleared of high resistance surface layer to the terminal of one of the adjacent solar cells. | 10-29-2009 |
20090266399 | METALLIC FOIL SUBSTRATE AND PACKAGING TECHNIQUE FOR THIN FILM SOLAR CELLS AND MODULES - Methods of forming thin film solar cells with a metallic substrate are described, as well as solar cells and solar cells strings. The front surface of the metallic substrate is polished to form a polished front surface so that the average roughness of the polished front surface is less than 50 nm. The back surface of the metallic substrate is roughened to form a rough back surface so that the average roughness of the conditioned back surface is more than 500 nm. A Group IBIIIAVIA compound absorber layer is formed over the polished front surface. | 10-29-2009 |
20090269877 | METHOD AND APPARATUS FOR ACHIEVING LOW RESISTANCE CONTACT TO A METAL BASED THIN FILM SOLAR CELL - A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process to form a treated back surface in a process chamber. In one embodiment, the material removal process is performed while depositing a transparent conductive layer over the semiconductor absorber film in the process chamber. | 10-29-2009 |
20090283140 | METHOD OF MAKING CONTACT TO A SOLAR CELL EMPLOYING A GROUP IBIIIAVIA COMPOUND ABSORBER LAYER - A solar cell manufacturing method which forms a Group IBIIAVIA absorber layer over a front side of a metallic substrate. The back side of the metallic substrate is coated with a conductive protection layer, such as a metal nitride material, that that does not form a high resistivity selenide or sulfide films when exposed to Se and S species at temperatures in the range of 400-600 C. Additionally, the protection material layer is stable in highly acidic and basic electroplating solutions that are employed to deposit layers or precursor layers comprising Cu and at least one of In, Ga, Se and S. | 11-19-2009 |
20090283411 | SELENIUM ELECTROPLATING CHEMISTRIES AND METHODS - An electroplating solution to electroplate a selenium containing film on a conductive surface is provided. The electroplating solution includes a solvent, a selenium source material that dissolves in the solvent; an anti-coagulation agent that inhibits Se particle growth and promotes Se particle dispersal. The pH value of the electroplating solution is in the range of 2-10. | 11-19-2009 |
20090283414 | ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF GROUP IIIB-GROUP VIA THIN FILMS - An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface. | 11-19-2009 |
20090283415 | ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF COPPER-INDIUM-GALLIUM CONTAINING THIN FILMS - Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7. | 11-19-2009 |
20090314649 | PRECURSOR CONTAINING COPPER INDIUM AND GALLIUM FOR SELENIDE (SULFIDE) COMPOUND FORMATION - The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells. | 12-24-2009 |
20090315148 | ELECTROPLATING METHOD FOR DEPOSITING CONTINUOUS THIN LAYERS OF INDIUM OR GALLIUM RICH MATERIALS - An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least | 12-24-2009 |
20100015754 | METHOD AND APPARATUS TO FORM THIN LAYERS OF PHOTOVOLTAIC ABSORBERS - A method and a system are provide for forming planar precursor structures which are subsequently converted into thin film solar cell absorber layers. A precursor structure is first formed on the front surface of the foil substrate and then planarized through application of force or pressure by a smooth surface to obtain a planar precursor structure. The precursor structure includes at least one of a Group IB material, Group IIIA material and Group VIA material. The planar precursor structures are reacted to form planar and compositionally uniform thin film absorber layers for solar cells. | 01-21-2010 |
20100031996 | STRUCTURE AND METHOD OF MANUFACTURING THIN FILM PHOTOVOLTAIC MODULES - A continuous manufacturing method to form a continuous multi-module device including a plurality of solar cell modules is provided. The continuous multi-module device can be cut into sections including a desired number of solar cell modules that can be used in solar energy applications. The number of solar cells in the desired section can be advantageously electrically connected by connecting power output wires that outwardly extend from each solar cell module. If any solar cell module malfunctions during its use, that portion may be easily removed and the remaining modules are reconnected. | 02-11-2010 |
20100031997 | FLEXIBLE THIN FILM PHOTOVOLTAIC MODULES AND MANUFACTURING THE SAME - A continuous flexible sheet for use in fabricating flexible solar cell modules is provided. The continuous flexible sheet includes an elongated protective sheet having a front surface and a back surface. The back surface includes at least two barrier regions and an at least one separation region. At least two moisture barrier layers attached to the at least two barrier regions. The at least one separation region surrounds and physically separates the at least two barrier layers attached to the at least two barrier regions. | 02-11-2010 |
20100032006 | PHOTOVOLTAIC MODULES WITH IMPROVED RELIABILITY - A solar module includes a protective shell with at least two sealed sections formed by moisture barrier sealants. Each sealed section is separated from the adjacent sections and includes at least a portion of a solar cell. In this sectioned configuration, any local defect through the protective shell will only affect the performance of the portions of the solar cells within a particular section that contains this defect and will not affect the portions of the solar cells that are in other sections. | 02-11-2010 |
20100089447 | CONDUCTIVE GRIDS FOR SOLAR CELLS - Embodiments of the present inventions provide structures and methods for manufacturing high electrical conductivity grid patterns having minimum shadowing effect on the illuminated side of the solar cells. To manufacture a conductive grid for a solar cell, a first conductive layer is initially formed over a transparent conductive oxide layer of a solar cell. The first conductive layer has a pattern including a busbar and fingers connected to the busbar. Next, a second conductive layer is formed on the first conductive layer. In one embodiment, the first conductive layer includes silver and the second conductive layer includes carbon nano tube material, or the first conductive layer includes carbon nano tube material and the second conductive layer includes silver. | 04-15-2010 |
20100116678 | GALLIUM ELECTROPLATING METHODS AND ELECTROLYTES EMPLOYING MIXED SOLVENTS - An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. | 05-13-2010 |
20100124600 | METHOD AND APPARATUS FOR DETECTING AND PASSIVATING DEFECTS IN THIN FILM SOLAR CELLS - The embodiments of the present invention provide a defect detection process and apparatus to detect defects in solar cell structures. During the process, an input signal from a signal source is applied to a top surface of a transparent conductive layer of a solar cell structure. In response to the input signal, an output signal is generated from a predetermined area of the top surface and detected by a defect detector. The output signal carrying the defect position information is transmitted to a computer and registered in a database. With the position information, an injector is driven to the defect location to apply an insulator to passivate the defect. A finger pattern layer may be formed over the predetermined area after completing the defect detection and passivation processes. | 05-20-2010 |
20100139557 | REACTOR TO FORM SOLAR CELL ABSORBERS IN ROLL-TO-ROLL FASHION - A reactor to anneal a workpiece including a precursor material deposited over a flexible substrate is provided. The anneal process transforms the precursor material into a solar cell absorber when the workpiece is advanced through a process gap of the reactor. The process gap is defined by a peripheral wall including a top wall, a bottom wall and side walls. An exhaust opening located between the entrance and exit openings to remove gases from the continuous process gap. At least one roller having a rotational axis that is substantially transverse to the process direction and which has an outer roller surface disposed at least partially below the top wall of the continuous process gap forms a reduced gap between the outer surface of the roller and the bottom wall. The reduced gap is smaller than the process gap and the at least one roller is configured such that the workpiece travels through the reduced gap with the precursor material facing the at least one roller as the workpiece is moved between the entrance opening and the exit opening in a process direction. | 06-10-2010 |
20100140078 | METHOD AND APPARATUS FOR FORMING CONTACT LAYERS FOR CONTINUOUS WORKPIECES - The present invention provides a roll to roll system and a method to sputter deposit various conductive films on a back surface and a front surface of a continuous substrate to form protected base structures for Group IBIIIAVIA thin film solar cells. In one embodiment of the invention, a back protection film is sputter deposited onto the entire back side of the substrate in a first deposition station without transferring heat from the substrate. Next, a first front film is sputter deposited in a second deposition station to partially cover the front side of the substrate while heat is transferred from substrate by a cooling surface of a cooling mechanism in the second deposition station. The second film does not cover the edges of the substrate to avoid contaminating the cooling surface with the depositing material. Other embodiments are directed to specifics regarding the depositing of these films, adding other films, and a system for depositing the films. | 06-10-2010 |
20100147364 | THIN FILM PHOTOVOLTAIC MODULE MANUFACTURING METHODS AND STRUCTURES - The present invention provides module structures and methods of manufacturing rigid or flexible photovoltaic modules employing thin film solar cells fabricated on flexible substrates, preferably on flexible metallic foil substrates. The solar cells may be Group IBIIIAVIA compound solar cells or amorphous silicon solar cells fabricated on thin stainless steel or aluminum alloy foils. In one embodiment, initially a solar cell string including two or more solar cells is formed by interconnecting the solar cells with conductive leads or ribbons. At least one bypass diode electrically connects conductive back surfaces of at least two solar cells. The bypass diode and the solar cells are encapsulated with support material and are packed with the protective shell such that the at least one bypass diode is placed between at least one solar cell and the bottom protective sheet. The bypass diode is thermally connected to the back conductive surface of one of the solar cells so that the back conductive surface of the solar cell functions as a heat sink. | 06-17-2010 |
20100147677 | DRUM DESIGN FOR WEB PROCESSING - A roll to roll system for depositing a material on a workpiece is provided. In one embodiment, the system includes a drum, which rotates about an axis that is transverse to a process direction, and a number of PVD deposition units. The drum further includes a peripheral surface that includes a groove having a recessed workpiece contact surface that is parallel to the axis and disposed between a first side wall and a second side wall. A portion of the recessed workpiece contact surface supports a section of the workpiece and the first and second side walls maintain the section of the workpiece on the portion of the recessed workpiece contact surface as the workpiece is moved along the process direction. The PVD deposition units are disposed across from some of the portion of the peripheral surface and continuously deposit the material across a width of some of the section of the workpiece. | 06-17-2010 |
20100178716 | METHOD AND APPARATUS TO REMOVE A SEGMENT OF A THIN FILM SOLAR CELL STRUCTURE FOR EFFICIENCY IMPROVEMENT - The present inventions relate to methods and apparatus for detecting and mechanically removing defects and a surrounding portion of the photovoltaic layer and the substrate in a thin film solar cell such as a Group IBIIIAVIA compound thin film solar cell to improve its efficiency. | 07-15-2010 |
20100210040 | Method and apparatus for reducing the effect of shunting defects on thin film solar cell performance - The present invention provides methods of manufacturing a high efficiency solar cell. In one embodiment, in a solar cell having a grid pattern that channels current, a defect causes an undesired current flow is removed by mechanically removing a portion of the grid pattern, thereby passivating the defect by removing a segment of the solar cell adjacent the defect. The segment also includes the front and back portions of the solar cell at the location of the defect without including the defect. | 08-19-2010 |
20100224501 | PLATING METHODS FOR LOW ASPECT RATIO CAVITIES - The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative movement between the workpiece and the workpiece-surface-influencing device is established so that an additive in the electrolyte solution disposed on the workpiece and which is adsorbed onto the top surface is removed or otherwise its amount or concentration changed with respect to the additive on the cavity surface of the workpiece. Plating of the conductive material can place prior to, during and after usage of the workpiece-surface-influencing device, particularly after the workpiece surface influencing device no longer contacts any portion of the top surface of the workpiece, to achieve desirable semiconductor structures. | 09-09-2010 |
20100226629 | ROLL-TO-ROLL PROCESSING AND TOOLS FOR THIN FILM SOLAR CELL MANUFACTURING - Described are roll-to-roll or reel-to-reel thermal or rapid thermal processing tools (reactors) are used to react a precursor layer on a continuous flexible workpiece. Variants of the reactors are described, including a reactor having multiple exhaust outlets connected to a process gap of the reactor between an entrance opening and an exit opening of the process gap; a reactor including multiple gas inlets and exhaust outlets connected to a process gap of the reactor between an entrance opening and an exit opening of the process gap; a reactor including multiple gas inlets and exhaust outlets connected to a process gap of the reactor between an entrance opening and an exit opening of the process gap; and a reactor including multiple gas inlets and exhaust outlets connected to a process gap of the reactor between an entrance opening and an exit opening of the process gap. Also described is an exhaust system that separates the Group VIA material vapors from other gaseous species for re-cycling or easy disposal and techniques and apparatus for efficient removal of moisture from the workpiece before processing precursor layer in the RTP tool. | 09-09-2010 |
20100229940 | TECHNIQUE FOR PREPARING PRECURSOR FILMS AND COMPOUND LAYERS FOR THIN FILM SOLAR CELL FABRICATION AND APPARATUS CORRESPONDING THERETO - The present invention advantageously provides for, in different embodiments, improved contact layers or nucleation layers over which precursors and Group IBIIIAVIA compound thin films adhere well and form high quality layers with excellent micro-scale compositional uniformity. It also provides methods to form precursor stack layers, by wet deposition techniques such as electroplating, with large degree of freedom in terms of deposition sequence of different layers forming the stack. | 09-16-2010 |
20100248415 | SEMITRANSPARENT FLEXIBLE THIN FILM SOLAR CELLS AND MODULES - A method of manufacturing partially light transparent thin film solar cells generally includes forming a solar cell structure stack and forming multiple openings through the solar cell structure stack. The solar cell structure stack includes a flexible foil substrate, a contact layer formed over the flexible foil substrate, a Group IBIIIAVIA absorber layer formed over the contact layer and a transparent conductive layer formed over the Group IBIIIAVIA absorber layer. A terminal structure including at least one busbar and a plurality of conductive finger patterns is deposited onto a top surface of the transparent conductive layer forming a semi-transparent solar cell. | 09-30-2010 |
20100264035 | REEL-TO-REEL PLATING OF CONDUCTIVE GRIDS FOR FLEXIBLE THIN FILM SOLAR CELLS - The present inventions provide structures and methods for manufacturing high electrical conductivity grid patterns having minimum shadowing effect on the illuminated side of the solar cells. In a particular aspect, a width of an effective channel region is greater than a spacing that exists between conductive elements in adjacent grid patterns that exist along a lengthwise direction of a continuous workpiece. | 10-21-2010 |
20100317129 | COMPOSITION CONTROL FOR PHOTOVOLTAIC THIN FILM MANUFACTURING - The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses. | 12-16-2010 |
20100317144 | TECHNIQUE AND APPARATUS FOR DEPOSITING LAYERS OF SEMICONDUCTORS FOR SOLAR CELL AND MODULE FABRICATION - The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. It also provides methods to monolithically integrate solar cells made on such compound thin films to form modules. In one embodiment, there is provided a method of growing a Group IBIIIAVIA semiconductor layer on a base, and includes the steps of depositing on the base a nucleation and/or a seed layer and electroplating over the nucleation and/or the seed layer a precursor film comprising a Group IB material and at least one Group IIIA material, and reacting the electroplated precursor film with a Group VIA material. Other embodiments are also described. | 12-16-2010 |
20100330733 | SEMITRANSPARENT FLEXIBLE THIN FILM SOLAR CELLS AND MODULES - A method of manufacturing partially light transparent thin film solar cells generally includes forming a solar cell structure stack and forming multiple openings through the solar cell structure stack. The solar cell structure stack includes a flexible foil substrate, a contact layer formed over the flexible foil substrate, a Group IBIIIAVIA absorber layer formed over the contact layer and a transparent conductive layer formed over the Group IBIIIAVIA absorber layer. A terminal structure including at least one busbar and a plurality of conductive finger patterns is deposited onto a top surface of the transparent conductive layer forming a semi-transparent solar cell. | 12-30-2010 |
20110005586 | Electrochemical Deposition Methods for Fabricating Group IBIIIAVIA Compound Absorber Based Solar Cells - A method of forming a Group IBIIIAVIA absorber layer on a base for manufacturing a solar cell is provided. The method, in one embodiment, includes forming a precursor stack by electroplating a first metallic layer on the base. The first metallic layer includes at least one of copper, indium and gallium. A first selenium layer is deposited on the first metallic layer, and an interlayer is electrodeposited on the selenium layer. The interlayer includes one of gold and silver. A second metallic layer is electrodeposited on the interlayer, the second metallic layer comprising at least one of copper indium and gallium. The interlayer inhibits dissolution of selenium during the electrodeposition of the second metallic layer. Such prepared precursor stack is reacted at a temperature range of 300-600° C. to form the Group IBIIIAVIA absorber layer. | 01-13-2011 |
20110011340 | METHOD AND APPARATUS FOR CONVERTING PRECURSOR LAYERS INTO PHOTOVOLTAIC ABSORBERS - The present invention relates to method and apparatus for preparing thin films of semiconductor films for radiation detector and photovoltaic applications. In one aspect, the present invention includes a series of chambers between the inlet and the outlet, with each chamber having a gap that allows a substrate to pass therethrough, and which is temperature controlled, thereby allowing each chamber to maintain a different temperature, and the substrate to be annealed based upon a predetermined temperature profile by efficiently moving through the series of chambers. In another aspect, each of the chambers opens and closes, and creates a seal when in the closed position during which time annealing takes place within the gap of the chamber. In a further aspect, the present invention provides a method of forming a Group IBIIIAVIA compound layer on a surface of a flexible roll. | 01-20-2011 |
20110039366 | METHOD AND APPARATUS FOR DEPOSITION OF GRADED OR MULTI-LAYER TRANSPARENT FILMS - In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition. | 02-17-2011 |
20110180414 | ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF COPPER-INDIUM-GALLIUM CONTAINING THIN FILMS - Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7. | 07-28-2011 |
20110226630 | GALLIUM ELECTROPLATING METHODS AND ELECTROLYTES EMPLOYING MIXED SOLVENTS - An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. | 09-22-2011 |
20110239450 | ROLL-TO-ROLL MANUFACTURING OF FLEXIBLE THIN FILM PHOTOVOLTAIC MODULES - Described in one embodiment is a system that has a multiple number of different stations for forming solar cell modules. Described in another embodiment is a system that includes a cutting station, a setting station, and an interconnection station to create different series-connected flexible solar cell modules. Described in still another embodiment is a monolithically integrated multi-module power supply. | 10-06-2011 |
20110259424 | METHOD OF FABRICATING SOLAR CELLS WITH ELECTRODEPOSITED COMPOUND INTERFACE LAYERS - A method of fabricating a solar cell involves electroplating a Group IIB-VIA material as a first or sub-layer over a junction partner layer, and then forming a second layer, also of a Group IIB-VIA material over the sub-layer. Both the sub-layer and the second layer comprise Te. The electroplating is performed at relatively low temperatures, as for example, below 100° C. Forming the sub-layer by low temperature electroplating produces a small grained compact film that protects the interface between the sub-layer and the junction partner during the formation of the second layer. The second layer may be formed by physical vapor deposition or ink deposition. A solar cell has a first layer of a stoichiometric Group IIB-VIA material formed on a CdS film, and a second layer of a Group IIB-V1A material. Both the first and second layers contain Te. The first layer may comprise CdTe with a grain size small than 0.5 microns and the second layer may comprise CdTe with a grin size in the range of 1-5 microns. | 10-27-2011 |
20110284065 | METHOD OF FORMING BACK CONTACT TO A CADMIUM TELLURIDE SOLAR CELL - A method of forming an ohmic contact to a surface of a Cd and Te containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Te-rich layer on the surface of the Cd and Te containing compound film; depositing an interface layer on the Te-rich layer; and laying down a contact layer on the interface layer. The interface layer is composed of a metallic form of Zn and Cu. | 11-24-2011 |
20110284078 | METHOD OF FORMING CADMIUM TELLURIDE THIN FILM - A method of forming a metal telluride (MTe) film on a base where M is Cd and optionally additionally may include at least one of Zn, Hg, Mn and Mg, involves depositing a Te-rich precursor layer on a base and reaction of the Te-rich precursor layer with an M-containing material at elevated temperature. The Te-rich precursor film is one of a MTex compound film with an x value larger than 1, a composite film comprising MTe and Te, and a composite film comprising a MTex compound film with an x value larger than 1. In a preferred embodiment the Te-rich precursor layer is electrodeposited. In another preferred embodiment both the Te-rich precursor layer and the M-containing material are electrodeposited. In yet another preferred embodiment the Te-rich precursor film is one of a CdTex compound film with an x value larger than 1, a composite film comprising CdTe and Te, and a composite film comprising a CdTex compound film with an x value larger than 1; and the Te-rich precursor film is reacted with Cd to form a stoichiometric CdTe film on the base. | 11-24-2011 |
20120043215 | METHOD AND APPARATUS FOR ELECTRODEPOSITING LARGE AREA CADMIUM TELLURIDE THIN FILMS FOR SOLAR MODULE MANUFACTURING - Embodiments of the inventions provide methods and apparatus to electroplate films of tellurides such as CdTe, or its alloys on multiple large area workpieces. In one embodiment a method of forming a solar cell absorber film on multiple work pieces uses a self adjusting mechanism taking advantage of the high resistivity of the solar cell absorber film. Larger deposits of the plating material onto one workpiece, due for example, to non-uniformity of solution flow, results in larger resistance thus decreasing the current flowing through that workpiece. The decreased current then deposits less material over that workpiece. In another embodiment multiple workpieces can be electroplated using a single power supply in a single plating bath. | 02-23-2012 |
20120132283 | CADMIUM TELLURIDE SOLAR CELL AND METHOD OF FABRICATING THE SAME - A thin film solar cell includes a buffer layer disposed between a transparent conductive layer and a junction partner layer. The solar cell has an absorber layer made from a Group II-VI compound which is in contact with the junction partner layer. The buffer layer is made from at least one of cadmium doped tin oxide, indium sulfide, tin doped indium sulfide, gallium sulfide and tin doped gallium sulfide. | 05-31-2012 |
20120175262 | METHOD AND APPARATUS FOR ELECTRODEPOSITION OF GROUP IIB-VIA COMPOUND LAYERS - Methods and apparatus are described for electrodeposition of Group IIB-VIA materials out of electrolytes comprising Group IIB and Group VIA species onto surfaces of workpieces. In one embodiment a method of electrodeposition is described wherein the control of the process is achieved by measuring an initial value of the electrodeposition current at the beginning of the process and adding Group VIA species into the electrolyte to keep the electrodeposition current substantially constant, such a within +/−10% of the initial value throughout the deposition period. In another embodiment an apparatus comprising multiple deposition chambers are described, each deposition chamber containing an anode and a workpiece, and wherein two thirds of the deposition chambers within the apparatus contain anodes comprising a substantially pure Group VIA element in their composition, and the rest of the deposition chambers contain anodes free from any Group VIA element in their composition. | 07-12-2012 |
20120192924 | MONOLITHIC INTEGRATION OF SUPER-STRATE THIN FILM PHOTOVOLTAIC MODULES - An integrated structure for solar modules may be formed by deposition of a transparent conductive material layer on a transparent support, forming scribe lines through the transparent conductive material layer, depositing a semiconductor window layer, depositing a solar cell absorber layer, depositing a first conductive layer, making cuts through the layers to expose a top surface of the transparent conductive material layer, depositing a second conductive layer and making isolation scribes that separate back contacts of adjacent solar cells from each other. Alternatively, two conductive films may be used with high resistance plugs, thereby permitting optimization of functions. The first film may be selected to optimize good ohmic contact with the absorber layer and/or to present a high diffusion barrier, whereas the second conductive film may be selected to optimize good ohmic contact with the transparent conductive material layer. | 08-02-2012 |
20120192948 | HIGH EFFICIENCY CADMIUM TELLURIDE SOLAR CELL AND METHOD OF FABRICATION - A method of forming an ohmic contact and electron reflector on a surface of a CdTe containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Cd-deficient, Te-rich surface region at a surface of the CdTe containing compound film; exposing the Cd-deficient surface region to an electron reflector forming material; forming the electron reflector; and laying down a contact layer over the electron reflector layer. The solar cell so produced has a Cd-deficient region which is converted to an electron reflector layer on the surface of a CdTe absorber layer, and an ohmic contact. A Cd/Te molar ratio within the Cd-deficient region decreases from 1 at an interface with the CdTe absorber layer to a value less than 1 towards the ohmic contact. | 08-02-2012 |
20120199490 | ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF GROUP IIIA-GROUP VIA THIN FILMS - An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface. | 08-09-2012 |
20120279855 | APPARATUS FOR ACHIEVING LOW RESISTANCE CONTACT TO A METAL BASED THIN FILM SOLAR CELL - A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process to form a treated back surface in a process chamber. In one embodiment, the material removal process is performed while depositing a transparent conductive layer over the semiconductor absorber film in the process chamber. | 11-08-2012 |
20120282727 | METHOD OF MANUFACTURING PHOTOVOLTAIC MODULES WITH IMPROVED RELIABILITY - A solar module includes a protective shell with at least two sealed sections formed by moisture barrier sealants. Each sealed section is separated from the adjacent sections and includes at least a portion of a solar cell. In this sectioned configuration, any local defect through the protective shell will only affect the performance of the portions of the solar cells within a particular section that contains this defect and will not affect the portions of the solar cells that are in other sections. | 11-08-2012 |
20120288986 | ELECTROPLATING METHOD FOR DEPOSITING CONTINUOUS THIN LAYERS OF INDIUM OR GALLIUM RICH MATERIALS - An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film. | 11-15-2012 |
20120318333 | COPPER INDIUM GALLIUM CHALCOGENIDE MULTILAYER STRUCTURE WITH OPTIMIZED GALLIUM CONTENT AT ITS SURFACE - A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including at least Cu and In formed on a base, a separator layer including Se is formed on the metallic film, a metallic source layer substantially including Ga formed on the separator layer, and a cap layer substantially including Se formed on the source layer. | 12-20-2012 |
20120325317 | APPARATUS FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYERS - A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber. | 12-27-2012 |
20140261676 | USE OF A BUFFER LAYER TO FORM BACK CONTACT TO A GROUP IIB-VIA COMPOUND DEVICE - A method of making a back contact to a Group IIB-VIA compound layer employed in a device such as a solar cell and in particular a CdTe solar cell. The method involves deposition of a contact buffer layer comprising an ionic conductor over a surface of a CdTe film, which is the absorber of the solar cell. A highly conductive contact layer is deposited over the contact buffer layer. In some examples, the compound device is a device such as a solar cell and in particular a CdTe solar cell in a sub-strate configuration or structure. The method involves deposition of a contact buffer layer comprising an ionic conductor on a surface of a highly conductive contact layer. A CdTe film, which is the absorber layer of the solar cell is then deposited over the contact buffer layer. | 09-18-2014 |