Patent application number | Description | Published |
20090242367 | METHOD OF MONITORING THE POSITION OF A MOVABLE PART OF AN ELECTRICAL SWITCH APPARATUS - A device for monitoring a position of a movable portion mounted on a casing of a switching electrical apparatus, the movable portion configured to adopt at least two determined positions. The device includes a permanent magnet and a reader including an antenna to interchange data without contact by electromagnetic coupling with a receiver element associated with the switching electrical apparatus. The receiver element includes an antenna controlled by a microswitch switched between two states depending on the position of the movable portion to establish or interrupt the electromagnetic coupling between the reader and the receiver element. | 10-01-2009 |
20110304321 | Electric power metering device and method - The electric power metering device comprises a pulse meter to provide an electric pulse or a closing of an electric circuit at each predefined quantity of electric power. A communication module is connected to said pulse meter to send electric power and/or consumed electric power information. Two inputs of the communication module receive the connection with the pulse meter. Said communication module comprises discrimination means connected to the inputs to differentiate power pulse information and status information of an electric apparatus connected to said inputs. The electric power metering method comprises a discrimination step to differentiate power pulse information and status information of an electric apparatus connected to said inputs of the communication module | 12-15-2011 |
20140333294 | METHOD FOR DETERMINING A POWER CONSUMPTION, SUPERVISION SYSTEM AND ELECTRIC INSTALLATION COMPRISING APPLICATION THEREOF - To determine a consumption in a group of branches of individual distribution of electrical energy, a method includes: a) detecting a change in electrical consumption in the branches, b) reading information relating to an electric current in a specific branch, then c) using the information, establishing an indication according to which the change took place in the specific branch, then d) determining, using measurements taken of an overall power supply of the group of branches before the change and measurements taken of the overall power supply after the change, in addition to the indication, an individual energy consumption of the specific branch. | 11-13-2014 |
20140343742 | METHOD FOR DETERMINING A POWER CONSUMPTION IN AN ELECTRIC INSTALLATION AND ALTERNATING CURRENT ELECTRIC INSTALLATION - A group including a plurality of individual distribution branches connected in parallel is connected to an alternating-current power supply. A method includes: a) detection of a change in the electrical consumption of one specific branch among the branches; and b) determination of individual power consumption of the specific branch, based on a measurement of the total voltage, which is substantially constant during the change, measurements of intensity and phase shift values of the total current before and after the change, and measurements of intensities of individual current in the specific branch before and after the change. | 11-20-2014 |
20150105926 | METHOD FOR DETERMINING AN INDIVIDUAL POWER CONSUMPTION - To determine a power consumption in a group of individual electric power distribution branches ( | 04-16-2015 |
20150215970 | METHOD AND SYSTEM FOR TRANSMITTING MESSAGES USING A MOBILE COMMUNICATION DEVICE - Message transmission system, including first and second networks ( | 07-30-2015 |
Patent application number | Description | Published |
20100288741 | METHOD FOR HEATING A PLATE WITH A LIGHT STREAM - The invention relates to a method for heating a wafer ( | 11-18-2010 |
20110250416 | METHODS OF MAKING SUBSTRATE STRUCTURES HAVING A WEAKENED INTERMEDIATE LAYER - This invention provides composite semiconductor substrates and methods for fabricating such substrates. The composite structures include a semiconductor substrate, a semiconductor superstrate and an intermediate layer interposed between the substrate and the superstrate that comprises a material that undergoes a structural transformation When subject to a suitable heat treatment. The methods provide such a heat treatment so that the intermediate layer becomes spongy or porous, being filled with numerous micro-bubbles or micro-cavities containing a gaseous phase. The composite semiconductor substrates with structurally-transformed intermediate layers have numerous applications. | 10-13-2011 |
20110293254 | METHOD AND DEVICE FOR HEATING A LAYER OF A PLATE BY PRIMING AND LIGHT FLOW - The invention relates to a method and to a device for at least locally heating a plate including at least one layer ( | 12-01-2011 |
20110315664 | METHOD FOR TREATING A PART MADE FROM A DECOMPOSABLE SEMICONDUCTOR MATERIAL - The present provides methods for treating a part made from a decomposable semiconductor material, and particularly, methods for detaching a surface film from the rest of such a part. According to the provided methods, a burst or pulse of light particles of short duration and very high intensity is applied to the part in order to selectively heat under substantially adiabatic conditions an area of the part located at a predefined depth from the surface to a temperature higher than the decomposition temperature of the material, and subsequently a surface film is detached from the rest of the part at the heated area. In preferred embodiments, the decomposable semiconductor material comprises Ga, or comprises Al | 12-29-2011 |
20120074526 | DETACHABLE SUBSTRATE AND PROCESSES FOR FABRICATING AND DETACHING SUCH A SUBSTRATE - The invention relates to a detachable substrate for the electronics, optics or optoelectronics industry, that includes a detachable layer resting on a buried weakened region. This substrate is remarkable in that this buried weakened region consists of a semiconductor material that is denser in the liquid state than in the solid state and that contains in places precipitates of naturally volatile impurities. The invention also relates to a process for fabricating and detaching a detachable substrate. | 03-29-2012 |
20120161291 | PROCESS FOR CLEAVING A SUBSTRATE - A process for cleaving a substrate for the purpose of detaching a film therefrom. The method includes the formation of a stress-generating structure locally bonded to the substrate surface and designed to expand or contract in a plane parallel to the substrate surface under the effect of a heat treatment; and the application of a heat treatment to the structure, designed to cause the structure to expand or contract so as to generate a plurality of local stresses in the substrate which generates a stress greater than the mechanical strength of the substrate in a cleavage plane parallel to the surface of the substrate defining the film to be detached, the stress leading to the cleavage of the substrate over the cleavage plane. Also, an assembly of a substrate and the stress-generating structure as well as use of the assembly in a semiconductor device for photovoltaic, optoelectronic or electronic applications. | 06-28-2012 |
20120199953 | SEMICONDUCTOR STRUCTURE WITH SMOOTHED SURFACE AND PROCESS FOR OBTAINING SUCH A STRUCTURE - The present invention relates to a process for smoothing the surface of a semiconductor wafer by fusion. The process includes defining a reference length which dimensions wafer surface roughness that is to be reduced or removed, and scanning the surface with a fusion beam while adjusting parameters of the fusion beam so as to fuse, during the scanning of the surface, a local surface zone of the wafer whose length is greater than or equal to the reference length, with the scanning continued to smooth the entire surface of the wafer by eliminating surface roughnesses of period lower than the reference length. The present invention also relates to a semiconductor wafer having a surface layer made of a semiconducting material that is smoothed by the process and that does not exhibit any roughness of period lower than the reference length. | 08-09-2012 |
20130072009 | METHOD FOR PREPARING A SUBSTRATE BY IMPLANTATION AND IRRADIATION - A method for preparing a substrate for detaching a layer by irradiation of the substrate with a light flux for heating a buried region of the substrate and bringing about decomposition of the material of that region to detach said detachment layer. The method includes fabricating an intermediate substrate including a first buried layer, and a second covering layer that covers all or part of the first layer, with the covering layer being substantially transparent to the light flux and with the buried layer formed by implantation of particles into the substrate, followed by absorbing the flux, and selectively and adiabatically irradiating a treated region of the buried layer until at least partial decomposition of the material constituting it ensues. | 03-21-2013 |
20130154065 | PROCESS FOR TREATING A SUBSTRATE USING A LUMINOUS FLUX OF DETERMINED WAFELENGTH, AND CORRESPONDING SUBSTRATE - A substrate is treated by means of at least one pulse of a luminous flux of determined wavelength. The substrate comprises an embedded layer that absorbs the luminous flux independently of the temperature. The embedded layer is interleaved between a first treatment layer, layer and a second treatment layer. The first treatment layer has a coefficient of absorption of luminous flux that is low at ambient temperature and grows as the temperature rises. The luminous flux may be applied in several places of the surface of the first layer to heat regions of the embedded layer and generate a propagating thermal front in the first layer opposite the heated regions of the embedded layer, which generate constraints within the second layer. | 06-20-2013 |
20140158041 | METHOD AND DEVICE FOR FABRICATING A LAYER IN SEMICONDUCTOR MATERIAL - The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method. | 06-12-2014 |
20150187638 | PROCESS FOR TRANSFERRING A LAYER - This transfer process comprises the following steps: (a) providing a donor substrate and a support substrate; (b) forming an embrittlement region in the donor substrate; (c) forming what is called a bonding layer between the first part of the donor substrate and the support substrate; and assembling the donor substrate to the support substrate, and is noteworthy in that it comprises the following step: (e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the exposure time being chosen depending on the thickness of the bonding layer so that the support substrate is thermally decoupled from the first part of the donor substrate, the exposure time being chosen depending on the power density in order to activate kinetics that weaken the embrittlement region. | 07-02-2015 |
Patent application number | Description | Published |
20090130392 | METHOD OF PRODUCING A THIN LAYER OF SEMICONDUCTOR MATERIAL - A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes implanting ions into the semiconductor wafer to define a reference plane, where the ion dose is above a minimum dose, but below a critical dose so as to avoid degrading the wafer surface. The method further includes applying a thermal treatment to define a layer of microcavities and applying stress to free the thin layer from the wafer. | 05-21-2009 |
20110092051 | PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP - A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate. | 04-21-2011 |
20120133028 | METHOD OF PRODUCING A THIN LAYER OF SEMICONDUCTOR MATERIAL - A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes implanting ions into the semiconductor wafer to define a reference plane, where the ion dose is above a minimum dose, but below a critical dose so as to avoid degrading the wafer surface. The method further includes applying a thermal treatment to define a layer of microcavities and applying stress to free the thin layer from the wafer. | 05-31-2012 |
20130273713 | PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP - A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate. | 10-17-2013 |