Patent application number | Description | Published |
20080210975 | METHOD OF FABRICATING HETEROEPITAXIAL MICROSTRUCTURES - An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method. | 09-04-2008 |
20090061594 | METHOD OF DETACHING A THIN FILM BY MELTING PRECIPITATES - A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase. | 03-05-2009 |
20090200569 | OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME - A method of producing an optoelectronic substrate by detaching a thin layer from a semi-conducting nitride substrate and transferring it to an auxiliary substrate to provide at least one semi-conducting nitride layer thereon, metallizing at least a portion of the surface of the auxiliary substrate that includes the transferred nitride layer, bonding to a final substrate the metallized surface portion of the transferred nitrate layer of the auxiliary substrate, and removing the auxiliary substrate to provide an optoelectronic substrate comprising a semi-conducting nitride surface layer over a subjacent metallized portion and a supporting final substrate. Resultant optoelectronic substrates having low dislocation densities are also included. | 08-13-2009 |
20090289332 | METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM - A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition. | 11-26-2009 |
20090321884 | METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER - A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion. | 12-31-2009 |
20100012947 | PROCESS FOR MAKING A GaN SUBSTRATE - The invention relates to a process for making a GaN substrate ( | 01-21-2010 |
20100178749 | METHOD OF FABRICATING EPITAXIALLY GROWN LAYERS ON A COMPOSITE STRUCTURE - A method of fabricating materials by epitaxy by epitaxially growing at least one layer of a material upon a composite structure that has at least one thin film bonded to a support substrate and a bonding layer of oxide formed by deposition between the support substrate and the thin film. The thin film and the support substrate have a mean thermal expansion coefficient of 7×10 | 07-15-2010 |
20100190000 | METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING LAYER OF OXIDE - A method of fabricating a composite structure that has at least one thin film bonded to a support substrate and a bonding layer of oxide formed by deposition between the support substrate and the thin film. The thin film and the support substrate have a mean thermal expansion coefficient of 7×10 | 07-29-2010 |
20110039368 | METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM - A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition. | 02-17-2011 |
20110127640 | STIFFENING LAYERS FOR THE RELAXATION OF STRAINED LAYERS - The present invention relates to a method for relaxing a strained material layer by providing a strained material layer and a low-viscosity layer formed on a first face of the strained material layer; forming a stiffening layer on at least one part of a second face of the strained material layer opposite to the first face thereby forming a multilayer stack; and subjecting the multilayer stack to a heat treatment thereby at least partially relaxing the strained material layer. | 06-02-2011 |
20110237008 | OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME - A method of fabricating a device by providing an auxiliary substrate having a metal nitride layer disposed thereon where the nitride layer has a nitrogen face and an opposite face and a dislocation density that is less than about 10 | 09-29-2011 |
20140014029 | METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING LAYER OF OXIDE - A method of preventing microcavity formation in the bonding layer of a composite structure resulting from creep and thermal expansion due to high temperature exposure of the composite structure The method includes the steps of providing the thin film with a thickness of 5 micrometers or less; providing the bonding layer of oxide with a thickness that is equal to or greater than the thickness of the thin film with the bonding layer formed by low pressure chemical vapor deposition. The thin film or support substrate have a mean thermal expansion coefficient of 7×10 | 01-16-2014 |