Patent application number | Description | Published |
20080206964 | Carbon Nanotube Transistor Process with Transferred Carbon Nanotubes - During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure. | 08-28-2008 |
20080272361 | High Density Nanotube Devices - Carbon-nanotube-based devices or nanowire-based devices are formed in multiple layers to obtain higher density of such devices. The layers may be all similar such as all carbon-nanotube-based transistors. Or they may be different, such as one layer with nanowire devices and another layer with nanotube devices. Or some layers such as the bottom layer may be based on silicon devices and another layer with nanotube devices. Traditional interconnects and vias may be used to connect layers and electrodes, or nanoscale materials such as nanotubes or nanowires may be used as interconnects or vias. | 11-06-2008 |
20080299710 | Carbon Nanotube Transistor Fabrication - During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure. | 12-04-2008 |
20090166686 | Edge-Contacted Vertical Carbon Nanotube Transistor - A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench. | 07-02-2009 |
20100096851 | Seal Actuated or Maintained by Differential Pressure - A seal has a tight sealing between a first space and a second space. The second space is at least partially enclosed by a member. The apparatus includes or performs creating or maintaining a pressure difference between a pressure in a third space at a seal assembly and pressure in each of the first space and the second space; and pushing, caused by the pressure difference, against a seal in the seal assembly to tighten sealing provided by the seal. | 04-22-2010 |
20100171099 | Carbon Nanotube Transistor Structure - A carbon nanotube transistor structure includes a number of carbon nanotubes extending vertically in a substrate material. A drain electrode of the transistor is connected to the carbon nanotubes at a first depth position, and a source electrode for the transistor structure connected to the carbon nanotubes at a second depth position. A gate electrode extends vertically along a side of the nanotubes, between the first and second depth positions. There may be multiple vertical side gate electrodes and multiple carbon nanotubes between these side gate electrodes. | 07-08-2010 |
20120138902 | Edge-Contacted Vertical Carbon Nanotube Transistor - A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench. | 06-07-2012 |
20140145143 | Carbon Nanotube Transistor Voltage Converter Circuit - A voltage converter circuit includes one or more single-walled carbon nanotube transistors, capable of handling relatively high amounts of current. The transistors are formed using a porous structure which has a number of single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another porous material. The circuit will be especially suited for power applications, including use in portable electronic devices such as notebook computers, MP3 players, mobile phones, digital cameras, personal digital assistants, and other battery-operated devices. | 05-29-2014 |