Patent application number | Description | Published |
20110000684 | FLOW CONTROL DEVICE WITH ONE OR MORE RETRIEVABLE ELEMENTS - An apparatus and associated method for controlling a flow of a fluid between a wellbore tubular and a formation may utilize a particulate control device positioned external to the wellbore tubular and a retrievable flow control element that controls a flow parameter of a fluid flowing between the particulate control device and a bore of the wellbore tubular. The flow control element may be re-configured in the wellbore and/or be used to inject a fluid into the formation. | 01-06-2011 |
20110079384 | Flow Control Device That Substantially Decreases Flow of a Fluid When a Property of the Fluid is in a Selected Range - An apparatus for controlling flow of fluid from a reservoir into a wellbore is provided, which apparatus in one embodiment may include a flow-through region configured to substantially increase value of a selected parameter relating to the flow-through region when selected parameter is in a first range and maintain a substantially constant value of the selected parameter when the selected property of the fluid is in a second range. | 04-07-2011 |
20110079387 | Method of Providing a Flow Control Device That Substantially Reduces Fluid Flow Between a Formation and a Wellbore When a Selected Property of the Fluid is in a Selected Range - A method of providing a flow control device is disclosed, which one aspect may include: defining a flow rate; defining a desired relationship between a parameter of the flow control device that exhibits a substantial change when a selected property of the fluid changes in a first range and remains substantially constant when the selected property is in the second range; determining using a computer and a simulation program the relationship between the performance parameter and the selected property over the first range and the second range for the defined flow rate for a geometry of a flow through area of a flow control device; comparing the determined relationship of the performance parameter with the desired relationship; altering the geometry to a new geometry when the difference between the desired performance and the determined performance is outside a desired range; determining using the computer and the simulation program the relationship between the performance parameter and the selected property over the first range and the second range for the defined flow rate for the new geometry of the flow through area of the flow control device; repeating the process of altering the geometry and determining the performance until the difference between the desired performance and the determined performance for a geometry is acceptable; and storing the geometry of the flow through device on a suitable storage medium for which the difference between the determined performance and the desired performance is acceptable. | 04-07-2011 |
20110079396 | Method of Making a Flow Control Device That Reduces Flow of the Fluid When a Selected Property of the Fluid is in Selected Range - A method of making a flow control device for controlling flow of fluid between a formation and a wellbore is provided, which method in one aspect may include: providing a member suitable for placement in a wellbore for receiving formation fluid; selecting a geometry for a flow-through region configured to substantially increase value of a selected parameter relating to the flow-through region when a selected property of the formation fluid is in a first range changes and maintain a substantially constant pressure drop across the flow-through region when the selected property of the fluid is in a second range; and forming the flow-through region on the member to provide the flow control device. | 04-07-2011 |
20110226481 | Apparatus and Method for Controlling Fluid Flow Between Formations and Wellbores - In one aspect, a passive flow control device for controlling flow of a fluid is provided, which device in one configuration include a longitudinal member configured to receive fluid radially along a selected length of the longitudinal member, the longitudinal member including flow restrictions configured to cause a pressure drop across the radial direction of the longitudinal member. In another aspect, a method of completing a wellbore is provided, which method in one embodiment may include providing a flow control device that includes a tubular with a first set of fluid flow passages and at least one member with a second set of fluid passages placed outside the tubular, wherein the first and second set of passages are offset along a longitudinal direction and the member is configured to receive a fluid along the radial direction; placing the flow control device at a selected location a wellbore; and allowing a fluid flow between the formation and the flow control device. | 09-22-2011 |
20130186631 | SYSTEM AND METHOD FOR TREATMENT OF WELL COMPLETION EQUIPMENT - An apparatus for controlling a flow of a fluid between a wellbore tubular having an opening and a formation includes a particulate control device and a flow control device positioned adjacent to the particulate control device. A flow path is formed between the opening of the wellbore tubular and the formation and that is internal to the particulate control device and the flow control device. The apparatus may include an additive supply line having an outlet positioned to dispense at least one additive into the flow path. A related method for controlling a flow of a fluid between a wellbore tubular having an opening and a formation may include positioning a flow control device adjacent to a particulate control device in the wellbore and dispensing at least one additive into a flow path internal to the particulate control device and the flow control device. | 07-25-2013 |
20130213664 | METHOD OF MAKING A FLOW CONTROL DEVICE THAT REDUCES FLOW OF THE FLUID WHEN A SELECTED PROPERTY OF THE FLUID IS IN SELECTED RANGE - A method of making a flow control device for controlling flow of fluid between a formation and a wellbore is provided, which method in one aspect may include: providing a member suitable for placement in a wellbore for receiving formation fluid; selecting a geometry for a flow-through region configured to substantially increase value of a selected parameter relating to the flow-through region when a selected property of the formation fluid is in a first range changes and maintain a substantially constant pressure drop across the flow-through region when the selected property of the fluid is in a second range; and forming the flow-through region on the member to provide the flow control device. | 08-22-2013 |
20140338902 | POLYSACCHARIDE DELIVERY UNIT FOR WELLBORE TREATMENT AGENT AND METHOD - A method of treating a subterranean formation. The method may include providing a well treatment including a treatment complex formed of a treatment agent encapsulated, entrapped, or embedded in a polysaccharide, introducing the treatment complex into a wellbore through a subterranean formation, and allowing the treatment complex to release the treatment agent over a release time period. The method may include allowing the treatment complex to release the treatment agent after a delay time period from the introduction of the treatment complex into the wellbore. | 11-20-2014 |
Patent application number | Description | Published |
20100292032 | Tee Support - A tee support includes a tubular body having a ball-support end, a lower end, and a longitudinal hole extending from ball-support end to the lower end. The tee support includes a first leg extending from the tubular body. The tee support includes a second leg extending from the tubular body, the second leg having a length substantially the same as a length of the first leg. The tee support includes a third leg extending from the tubular body, the third leg having a length substantially the same as the length of the first leg. The first leg, second leg and third leg may extend to a plane below the lower end. Furthermore, in such a tee support, the longitudinal hole may extend substantially along a vector normal to the plane, the plane defined by a cylindrical wall having a diameter within a tolerance of a tee body width. | 11-18-2010 |
20120088609 | Multilegged Tee - A tee for use with a golf ball. It includes a first leg, a second leg, and a third leg, joined at a hub, each leg having an end that is coplanar to form a terrain plane with the ends of corresponding legs. It also has a first ball support; a second ball support; and a third ball support, extending from the hub, wherein each ball support has an end that is coplanar to the ends of the corresponding ball supports in a ball support plane The ball support plane may be within a few degrees of parallel to the terrain plane. | 04-12-2012 |
Patent application number | Description | Published |
20120320141 | VIDEO CONFERENCE CONTROL SYSTEM AND METHOD - A local video conference system executing a video conference application, that lacks an ability or functionality to control a remote camera of a remote video conference system, can display video from the remote video conference system. The local video conference system can also execute a controller application that can provide the local video conference system control of the remote camera. The controller application can receive user input that selects a region of multiple regions of a display window of the video conference application indicating a camera action for the remote camera, can determine a camera action based on the user input and the selected region, and can provide the camera action to the remote video conference system via a network. The remote video conference system can pan, tilt, and/or zoom the remote camera based on the camera action received from the controller application of the local video conference system. | 12-20-2012 |
20150130888 | Video Conference Control System and Method - A local video conference system executing a video conference application, that lacks an ability or functionality to control a remote camera of a remote video conference system, can display video from the remote video conference system. The local video conference system can also execute a controller application that can provide the local video conference system control of the remote camera. The controller application can receive user input that selects a region of multiple regions of a display window of the video conference application indicating a camera action for the remote camera, can determine a camera action based on the user input and the selected region, and can provide the camera action to the remote video conference system via a network. The remote video conference system can pan, tilt, and/or zoom the remote camera based on the camera action received from the controller application of the local video conference system. | 05-14-2015 |
Patent application number | Description | Published |
20150093868 | INTEGRATED CIRCUIT DEVICES INCLUDING FINFETS AND METHODS OF FORMING THE SAME - Integrated circuit devices including fin field-effect transistors (finFETs) and methods of forming the same are provided. The methods may include forming a fin-shaped channel region including germanium on a substrate and forming a source/drain region adjacent the channel region on the substrate. The methods may further include forming a barrier layer contacting sidewalls of the channel region and the source/drain region, and the barrier layer may include Si | 04-02-2015 |
20150123075 | INTEGRATED CIRCUIT DEVICES INCLUDING STRAINED CHANNEL REGIONS AND METHODS OF FORMING THE SAME - Integrated circuit devices including strained channel regions and methods of forming the same are provided. The integrated circuit devices may include enhancement-mode field effect transistors. The enhancement-mode field effect transistors may include a quantum well channel region having a well thickness T | 05-07-2015 |
20150123701 | QUANTUM INTERFERENCE BASED LOGIC DEVICES INCLUDING ELECTRON MONOCHROMATOR - A logic device is provided which includes an electron monochromator. The electron monochromator includes a quantum dot disposed between first and second tunneling barriers, an emitter coupled to the first tunneling barrier, and a collector coupled to the second tunneling barrier. The logic device also includes a quantum interference device. The quantum interference device includes a source which is coupled to the collector of the electron monochromator. | 05-07-2015 |
20150145003 | FINFET SEMICONDUCTOR DEVICES INCLUDING RECESSED SOURCE-DRAIN REGIONS ON A BOTTOM SEMICONDUCTOR LAYER AND METHODS OF FABRICATING THE SAME - FinFET semiconductor devices and methods of forming the same are provided. The finFET semiconductor devices may include an insulator layer, a bottom semiconductor layer on the insulator layer, a channel fin on the bottom semiconductor layer, a source region on the bottom semiconductor layer and adjacent a first side of the channel fin, and a drain region on the bottom semiconductor layer and adjacent a second side of the channel fin opposite the first side. | 05-28-2015 |
20150243756 | INTEGRATED CIRCUIT DEVICES INCLUDING FINFETS AND METHODS OF FORMING THE SAME - Methods of forming a finFET are provided. The methods may include forming a fin-shaped channel region including indium (In) on a substrate, forming a deep source/drain region adjacent to the channel region on the substrate and forming a source/drain extension region between the channel region and the deep source/drain region. Opposing sidewalls of the source/drain extension region may contact the channel region and the deep source/drain region, respectively, and the source/drain extension region may include In | 08-27-2015 |
20150295084 | CRYSTALLINE MULTIPLE-NANOSHEET STRAINED CHANNEL FETS AND METHODS OF FABRICATING THE SAME - A field effect transistor includes a body layer having a strained crystalline semiconductor channel region, and a gate stack on the channel region. The gate stack includes a crystalline semiconductor gate layer that is lattice mismatched with the channel region, and a crystalline gate dielectric layer between the gate layer and the channel region. Related devices and fabrication methods are also discussed. | 10-15-2015 |
20150364542 | Integrated Circuits with Si and Non-Si Nanosheet FET Co-Integration with Low Band-to-Band Tunneling and Methods of Fabricating the Same - An integrated circuit may include multiple first, non-Si, nanosheet field-effect transistors (FETs) and multiple second, Si, nanosheet FETs. Nanosheets of ones of the first, non-Si, nanosheet FETs may include less than about 30% Si. The first, non-Si, nanosheet FETs may define a critical speed path of the circuit of the integrated circuit. Nanosheets of ones of the second, Si, nanosheet FETs may include more than about 30% Si. The second, Si, nanosheet FETs may define a non-critical speed path of the integrated circuit. Ones of the first, non-Si, nanosheet FETs may be configured to have a higher speed than a speed of ones of the second, Si, nanosheet FETs. | 12-17-2015 |
20160035675 | LOW RESISTIVITY DAMASCENE INTERCONNECT - A damascene interconnect structure may be formed by forming a trench in an ILD. A diffusion barrier may be deposited on trench surfaces, followed by a first liner material. The first liner material may be removed from a bottom surface of the trench. A second liner material may be directionally deposited on the bottom. A conductive seed layer may be deposited on the first and second liner materials, and a conductive material may fill in the trench. A CMP process can remove excess material from the top of the structure. A damascene interconnect may include a dielectric having a trench, a first liner layer arranged on trench sidewalls, and a second liner layer arranged on a trench bottom. A conductive material may fill the trench. The first liner material may have low wettability and the second liner material may have high wettability with respect to the conductive material. | 02-04-2016 |
20160071729 | RECTANGULAR NANOSHEET FABRICATION - Exemplary embodiments provide methods for fabricating a nanosheet structure suitable for field-effect transistor (FET) fabrication. Aspects of exemplary embodiment include selecting an active material that will serve as a channel material in the nanosheet structure, a substrate suitable for epitaxial growth of the active material, and a sacrificial material to be used during fabrication of the nanosheet structure; growing a stack of alternating layers of active and sacrificial materials over the substrate; and selectively etching the sacrificial material, wherein due to the properties of the sacrificial material, the selective etch results in remaining layers of active material having an aspect ratio greater than 1 and substantially a same thickness and atomic smoothness along the entire cross-sectional width of each active material layer perpendicular to current flow. | 03-10-2016 |
20160071970 | CONFINED SEMI-METAL FIELD EFFECT TRANSISTOR - Exemplary embodiments are disclosed for a semi-metal transistor, comprising: a semi-metal contact region adjacent to a metal contact; at least one semiconductor terminal; and a semi-metal transition region connected between the contact region and the semiconductor terminal that transitions from a substantially zero gap semi-metal beginning at an interface of the contact region into a semiconductor with an energy band gap towards the semiconductor terminal. | 03-10-2016 |
20160111284 | STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET - Exemplary embodiments provide for fabricating a nanosheet stack structure having one or more sub-stacks. Aspects of the exemplary embodiments include: growing an epitaxial crystalline initial stack of one or more sub-stacks, each of the sub-stacks having at least three layers, a sacrificial layer A, and at least two different non-sacrificial layers B and C having different material properties, wherein the non-sacrificial layers B and C layers are kept below a thermodynamic or kinetic critical thickness corresponding to metastability during all processing, and wherein the sacrificial layer An is placed only at a top or a bottom of each of the sub-stacks, and each of the sub-stacks is connected to an adjacent sub-stack at the top or the bottom using one of the sacrificial layers A; proceeding with fabrication flow of nanosheet devices, such that pillar structures are formed at each end of the epitaxial crystalline stack that to hold the nanosheets in place after selective etch of the sacrificial layers; and selectively removing sacrificial layers A to all non-sacrificial layers B and C, while the remaining layers in the stack are held in place by the pillar structures so that after removal of the sacrificial layers An, each of the sub-stacks contains the non-sacrificial layers B and C. | 04-21-2016 |
20160111337 | STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET - Exemplary embodiments provide for fabricating a biaxially strained nanosheet. Aspects of the exemplary embodiments include: growing an epitaxial crystalline initial superlattice having one or more periods, each of the periods comprising at least three layers, an active material layer, a first sacrificial material layer and a second sacrificial material layer, the first and second sacrificial material layers having different material properties; in each of the one or more periods, placing each of the active material layers between the first and second sacrificial material layers, wherein lattice constants of the first and second sacrificial material layers are different than the active material layer and impose biaxial stress in the active material layer; selectively etching away all of the first sacrificial material layers thereby exposing one surface of the active material for additional processing, while the biaxial strain in the active material layers is maintained by the second sacrificial material layers; and selectively etching away all of the second sacrificial material layers thereby exposing a second surface of the active material layers for additional processing. | 04-21-2016 |