Patent application number | Description | Published |
20100112216 | Chemical vapor deposition with elevated temperature gas injection - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these. | 05-06-2010 |
20100143588 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element ( | 06-10-2010 |
20110088623 | GAS TREATMENT SYSTEMS - An MOCVD reactor such as a rotating disc reactor ( | 04-21-2011 |
20110091648 | GAS TREATMENT SYSTEMS - An MOCVD reactor such as a rotating disc reactor ( | 04-21-2011 |
20110206843 | PROCESSING METHODS AND APPARATUS WITH TEMPERATURE DISTRIBUTION CONTROL - Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. | 08-25-2011 |
20110215071 | WAFER CARRIER WITH SLOPED EDGE - A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier. | 09-08-2011 |
20120040514 | CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber ( | 02-16-2012 |
20120171870 | WAFER PROCESSING WITH CARRIER EXTENSION - Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers. | 07-05-2012 |
20120325151 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element ( | 12-27-2012 |
20140116330 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis. | 05-01-2014 |
20140352619 | CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these. | 12-04-2014 |
20150056790 | CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber ( | 02-26-2015 |