Patent application number | Description | Published |
20090057645 | Memory element with improved contacts - A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material. | 03-05-2009 |
20090272437 | Transparent Conductive Materials Including Cadmium Stannate - A photovoltaic cell can include a transparent conductive layer including cadmium stannate. | 11-05-2009 |
20100186815 | Photovoltaic Device With Improved Crystal Orientation - A photovoltaic device can include a semiconductor absorber layer with improved cadmium telluride orientation. | 07-29-2010 |
20100319775 | Method and Apparatus for Annealing a Deposited Cadmium Stannate Layer - A method for manufacturing a multi-layered structure can include annealing a stack, where the annealing can include heating the stack in the presence of an inert gas, and where the stack includes a layer including cadmium and tin. | 12-23-2010 |
20110041917 | Doped Transparent Conductive Oxide - A solar cell with a doped transparent conductive oxide layer is disclosed. The doped transparent conductive oxide layer can improve the efficiency of CdTe-based or other kinds of solar cells. | 02-24-2011 |
20120040492 | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to activate or energize them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. Suitable deposition species include precursors that contain silicon, germanium, fluorine, and/or hydrogen. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration. | 02-16-2012 |
20120040493 | PLASMA DEPOSITION OF AMORPHOUS SEMICONDUCTORS AT MICROWAVE FREQUENCIES - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration. | 02-16-2012 |
20120040518 | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration. | 02-16-2012 |
20120115274 | Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies - Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration. | 05-10-2012 |
20120247553 | PHOTOVOLTAIC DEVICE WITH BUFFER LAYER - A method of manufacturing a structure can include forming a buffer layer on a transparent conductive oxide layer, where the buffer layer includes a layer including zinc and tin, and the transparent conductive oxide layer includes a layer including cadmium and tin. | 10-04-2012 |