Patent application number | Description | Published |
20120093761 | VACCINE COMPOSITIONS AND METHODS OF USE THEREOF - Nanoparticle-based vaccines, compositions, kits and methods are used for the effective delivery of one or more antigens in vivo for vaccination and antibody (e.g., monoclonal antibody) production, and for the effective delivery of peptides, proteins, siRNA, RNA or DNA to PAPCs or MHC class II positive cells (e.g. tumor cells). Antigens may be, for example, DNA that results in expression of the gene of interest and induction of a robust and specific immune response to the expressed protein in a subject (e.g., mammal). Antigens may also be immunogenic peptides or polypeptides that are processed and presented. In one embodiment, a nanoparticle -based method to deliver antigens in vivo as described herein includes injection of a vaccine composed of a DNA encoding at least one antigen, or at least one antigenic peptide or polypeptide conjugated to a charged dendrimer (e.g., PADRE-derivatized dendrimer) that is also conjugated to a T helper epitope (e.g., PADRE). Negatively-charged plasmids bind naturally to a positively-charged PADRE-dendrimer, while peptide or polypeptide antigens can be chemically linked to the PADRE-dendrimer if they are not negatively-charged. Alternatively, negatively-charged dendrimers may be used. The compositions, kits, vaccines and methods described herein have both prophylactic and treatment applications, i.e., can be used as a prophylactic to prevent onset of a disease or condition in a subject, as well as to treat a subject having a disease or condition. A vaccine as described herein can be used to mount an immune response against any infectious pathogen or cancer. | 04-19-2012 |
20120129199 | COMPOSITIONS, KITS AND METHODS FOR IN VITRO ANTIGEN PRESENTATION, ASSESSING VACCINE EFFICACY, AND ASSESSING IMMUNOTOXICITY OF BIOLOGICS AND DRUGS - Nanoparticle-based compositions, assays, kits, methods and platforms for delivering an antigen (peptides, proteins) or a nucleic acid encoding an antigen to professional APCs (PAPCs) result in the generation of autologous APCs that present a natural peptide repertoire of the antigen for use in assessing the efficacy of a vaccine (e.g., a cytotoxic T lymphocyte (CTL) response to a particular antigen) or other therapy or intervention (cell-based therapy, adjuvant therapy, etc.). The compositions, kits, assays and methods also can be used for delivering a drug or biologic or portion thereof to APCs for assessing the immunogenicity of drugs and biologics. The composition, kits, assays and methods involve the combined use of MHC targeting, universal DR binding peptides (e.g., PADRE, HA) with charged (e.g., positively-charged) highly branched polymeric dendrimers (e.g., PAMAM and other dendrimers) as vehicles for the targeted delivery of nucleic acids, peptides, biologics, drugs, or polypeptides to APCs, giving rise to a new nanoparticle-based method for assessing the immune response (CTL response) to a vaccination or other therapy or intervention, or for assessing the immunogenicity of a biologic or drug. Targeted delivery of nucleic acids, peptides, biologics, drugs, or polypeptides to APCs for effective expression and processing generates more physiologically relevant target antigens for evaluation of cell-mediated immune responses to vaccination, for example, and provides a low-cost approach for rapid generation of reagents and development of assay systems for more accurate profiling of immunological responses to infection, immunization, and other therapies or interventions. Immunoevaluation kits using targeted nanoparticle-based antigen delivery are described herein. | 05-24-2012 |
Patent application number | Description | Published |
20100187577 | SCHOTTKY DIODE - Improved Schottky diodes ( | 07-29-2010 |
20100301400 | SCHOTTKY DIODE - Improved Schottky diodes ( | 12-02-2010 |
20110012232 | BIPOLAR TRANSISTOR - An improved device ( | 01-20-2011 |
20110121428 | HIGH GAIN TUNABLE BIPOLAR TRANSISTOR - An improved bipolar transistor ( | 05-26-2011 |
20110175199 | ZENER DIODE WITH REDUCED SUBSTRATE CURRENT - A Zener diode is fabricated on a semiconductor substrate having semiconductor material thereon. The Zener diode includes a first well region having a first conductivity type, formed in the semiconductor material. The Zener diode also includes a first region having a second conductivity type, formed in the first well region (the second conductivity type is opposite the first conductivity type). The Zener diode also includes a second region having the first conductivity type, wherein the second region is formed in the first well region and overlying the first region. An electrode is formed in the first region, and the electrode is electrically coupled to the second region. | 07-21-2011 |
20110227135 | SCHOTTKY DIODES - Improved Schottky diodes with reduced leakage current and improved breakdown voltage are provided by building a JFET with its current path of a first conductivity type serially located between a first terminal comprising a Schottky contact and a second terminal. The current path lies (i) between multiple substantially parallel finger regions of a second, opposite, conductivity type substantially laterally outboard of the Schottky contact, and (ii) partly above a buried region of the second conductivity type that underlies a portion of the current path, which regions are electrically coupled to the first terminal and the Schottky contact and which portion is electrically coupled to the second terminal. When reverse bias is applied to the first terminal and Schottky contact, the current path is substantially pinched off in vertical or horizontal directions or both, thereby reducing the leakage current and improving the breakdown voltage of the device. | 09-22-2011 |
20120098095 | BIPOLAR TRANSISTOR WITH IMPROVED STABILITY - Instability and drift sometimes observed in bipolar transistors, having a portion of the base extending to the transistor surface between the emitter and base contact, can be reduced or eliminated by providing a further doped region of the same conductivity type as the emitter at the transistor surface between the emitter and the base contact. The further region is desirably more heavily doped than the base region at the surface and less heavily doped than the adjacent emitter. In another embodiment, a still or yet further region of the same conductivity type as the emitter is provided either between the further region and the emitter or laterally within the emitter. The still or yet further region is desirably more heavily doped than the further region. Such further regions shield the near surface base region from trapped charge that may be present in dielectric layers or interfaces overlying the transistor surface. | 04-26-2012 |
20120187538 | BIPOLAR TRANSISTOR WITH IMPROVED GAIN - Insufficient gain in bipolar transistors ( | 07-26-2012 |
20120264270 | METHODS FOR FORMING HIGH GAIN TUNABLE BIPOLAR TRANSISTORS - Embodiments for forming improved bipolar transistors are provided, manufacturable by a CMOS IC process. The improved transistor comprises an emitter having first and second portions of different depths, a base underlying the emitter having a central portion of a first base width underlying the first portion of the emitter, a peripheral portion having a second base width larger than the first base width partly underlying the second portion of the emitter, and a transition zone of a third base width and lateral extent lying laterally between the first and second portions of the base, and a collector underlying the base. The gain of the transistor is larger than a conventional bipolar transistor made using the same CMOS process. By adjusting the lateral extent of the transition zone, the properties of the improved transistor can be tailored to suit different applications without modifying the underlying CMOS IC process. | 10-18-2012 |
20130149831 | METHODS FOR FABRICATING BIPOLAR TRANSISTORS WITH IMPROVED GAIN - Insufficient gain in bipolar transistors ( | 06-13-2013 |
20130292764 | Semiconductor Device with Drain-End Drift Diminution - A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate, a channel region in the semiconductor substrate between the source and drain regions through which charge carriers flow during operation from the source region to the drain region, and a drift region in the semiconductor substrate, on which the drain region is disposed, and through which the charge carriers drift under an electric field arising from application of a bias voltage between the source and drain regions. A PN junction along the drift region includes a first section at the drain region and a second section not at the drain region. The drift region has a lateral profile that varies such that the first section of the PN junction is shallower than the second section of the PN junction. | 11-07-2013 |
20140001545 | HIGH BREAKDOWN VOLTAGE LDMOS DEVICE | 01-02-2014 |
20140015090 | BIPOLAR TRANSISTOR WITH HIGH BREAKDOWN VOLTAGE - A higher breakdown voltage transistor has separated emitter, base contact, and collector contact. Underlying the emitter and the base contact are, respectively, first and second base portions of a first conductivity type. Underlying and coupled to the collector contact is a collector region of a second, opposite, conductivity type, having a central portion extending laterally toward, underneath, or beyond the base contact and separated therefrom by the second base portion. A floating collector region of the same conductivity type as the collector region underlies and is separated from the emitter by the first base portion. The collector and floating collector regions are separated by a part of the semiconductor (SC) region in which the base is formed. A further part of the SC region in which the base is formed, laterally bounds or encloses the collector region. | 01-16-2014 |
20140061858 | Semiconductor Device with Diagonal Conduction Path - A method of fabricating a bipolar transistor including emitter and base regions having first and second conductivity types, respectively, includes forming an isolation region at a surface of a semiconductor substrate, the isolation region having an edge that defines a boundary of an active area of the emitter region, and implanting dopant of the second conductivity type through a mask opening to form the base region in the semiconductor substrate. The mask opening spans the edge of the isolation region such that an extent to which the dopant passes through the isolation region varies laterally to establish a variable depth contour of the base region. | 03-06-2014 |
20140110814 | Resurf High Voltage Diode - A trench-isolated RESURF diode structure ( | 04-24-2014 |
20140134820 | METHODS FOR PRODUCING BIPOLAR TRANSISTORS WITH IMPROVED STABILITY - Instability and drift sometimes observed in bipolar transistors, having a portion of the base extending to the transistor surface between the emitter and base contact, can be reduced or eliminated by providing a further doped region of the same conductivity type as the emitter at the transistor surface between the emitter and the base contact. The further region is desirably more heavily doped than the base region at the surface and less heavily doped than the adjacent emitter. In another embodiment, a still or yet further region of the same conductivity type as the emitter is provided either between the further region and the emitter or laterally within the emitter. The still or yet further region is desirably more heavily doped than the further region. Such further regions shield the near surface base region from trapped charge that may be present in dielectric layers or interfaces overlying the transistor surface. | 05-15-2014 |
20140187014 | METHODS FOR FORMING BIPOLAR TRANSISTORS - Methods are provided for forming a device that includes merged vertical and lateral transistors with collector regions of a first conductivity type between upper and lower base regions of opposite conductivity type that are Ohmically coupled via intermediate regions of the same conductivity type and to the base contact. The emitter is provided in the upper base region and the collector contact is provided in outlying sinker regions extending to the thin collector regions and an underlying buried layer. As the collector voltage increases part of the thin collector regions become depleted of carriers from the top by the upper and from the bottom by the lower base regions. This clamps the collector regions' voltage well below the breakdown voltage of the PN junction formed between the buried layer and the lower base region. The gain and Early Voltage are increased and decoupled and a higher breakdown voltage is obtained. | 07-03-2014 |
20140231961 | SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS - Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a collector region of semiconductor material having a first conductivity type, a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type, and a doped region of semiconductor material having the second conductivity type, wherein the doped region is electrically connected to the base region and the collector region resides between the base region and the doped region. In exemplary embodiments, the dopant concentration of the doped region is greater than a dopant concentration of the collector region to deplete the collector region as the electrical potential of the base region exceeds that of the collector region. | 08-21-2014 |
20140264724 | DEEP TRENCH ISOLATION - An integrated semiconductor device includes a substrate of a first conductivity type, a buried layer located over the substrate, an isolated region located over a first portion of the buried layer, and an isolation trench located around the isolated region. A punch-through structure is located around at least a portion of the isolation trench. The punch-through structure includes a second portion of the buried layer, a first region located over the second portion of the buried layer, the first region having a second conductivity type, and a second region located over the first region, the second region having the first conductivity type. | 09-18-2014 |
20140363945 | METHODS FOR FABRICATING IMPROVED BIPOLAR TRANSISTORS - Bipolar transistors and methods for fabricating bipolar transistors are provided. In one embodiment, the method includes the step or process of providing a substrate having therein a semiconductor base region of a first conductivity type and first doping density proximate an upper substrate surface. A multilevel collector structure of a second opposite conductivity type is formed in the base region. The multilevel collector includes a first collector part extending to a collector contact, a second collector part Ohmically coupled to the first collector part underlying the upper substrate surface by a first depth, a third collector part laterally spaced apart from the second collector part and underlying the upper substrate surface by a second depth and having a first vertical thickness, and a fourth collector part Ohmically coupling the second and third collector parts and having a second vertical thickness different than the first vertical thickness. | 12-11-2014 |
20150097238 | Mergeable Semiconductor Device with Improved Reliability - A device includes a semiconductor substrate, source and drain regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another, and a composite body region disposed in the semiconductor substrate and having a second conductivity type. The composite body region includes a first well region that extends laterally across the source and drain regions and a second well region disposed in the first well region. The drain region is disposed in the second well region such that charge carriers flow from the first well region into the second well region to reach the drain region. The second well region includes dopant of the first conductivity type to have a lower net dopant concentration level than the first well region. A pocket may be disposed in a drain extension region and configured to establish a depletion region along an edge of a gate structure. | 04-09-2015 |
20150097265 | Semiconductor Device with Buried Conduction Path - A device includes a semiconductor substrate, emitter and collector regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another, and a composite base region disposed in the semiconductor substrate, having a second conductivity type, and including a base contact region, a buried region through which a buried conduction path between the emitter and collector regions is formed during operation, and a base link region electrically connecting the base contact region and the buried region. The base link region has a dopant concentration level higher than the buried region and is disposed laterally between the emitter and collector regions. | 04-09-2015 |
20150104920 | SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS - Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a collector region of semiconductor material having a first conductivity type, a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type, and a doped region of semiconductor material having the second conductivity type, wherein the doped region is electrically connected to the base region and the collector region resides between the base region and the doped region. In exemplary embodiments, the dopant concentration of the doped region is greater than a dopant concentration of the collector region to deplete the collector region as the electrical potential of the base region exceeds that of the collector region. | 04-16-2015 |
20150155350 | Resurf High Voltage Diode - A trench-isolated RESURF diode structure ( | 06-04-2015 |
Patent application number | Description | Published |
20120125341 | FILTERING FACE-PIECE RESPIRATOR HAVING AN OVERMOLDED FACE SEAL - An filtering face-piece respirator that includes a mask body | 05-24-2012 |
20120125342 | FILTERING FACE-PIECE RESPIRATOR HAVING SUPPORT STRUCTURE INJECTION MOLDED TO FILTERING STRUCTURE - A filtering face-piece respirator | 05-24-2012 |
20130152919 | AIR FILTRATION DEVICE HAVING TUNED AIR DISTRIBUTION SYSTEM - A filtering device | 06-20-2013 |
20130152920 | AIR FILTRATION DEVICE HAVING SUBSECTIONS LACKING FLUID COMMUNICATION - A filtering device | 06-20-2013 |
20130340768 | FILTERING FACE-PIECE RESPIRATOR HAVING SUPPORT STRUCTURE INJECTION MOLDED TO FILTERING STRUCTURE - A filtering face-piece respirator | 12-26-2013 |
20140216472 | PERSONAL PROTECTIVE EQUIPMENT STRAP RETAINING DEVICES - A strap retaining device having an actuation arm that may engage a retaining tab is provided. In an exemplary embodiment, the strap retaining device includes a frame, a retention tab pivotally connected to the frame, and an actuation arm connected to the frame and having a first actuation element movable towards the retention tab from a neutral position to an actuated. The first actuation ramp is movable in a first plane to cause the retention tab to move in a second plane that is perpendicular to the first plane. | 08-07-2014 |
20140216473 | RESPIRATORY MASK HAVING A CLEAN AIR INLET CHAMBER - A respiratory mask body defining a first chamber and a second chamber is provided. In an exemplary embodiment, the mask body includes one or more inlet ports adapted to receive one or more breathing air source components in communication with the first chamber and a fluid intake communication component allows communication of air from the first chamber to the second chamber during inhalation by a wearer. | 08-07-2014 |
20140216474 | RESPIRATOR NEGATIVE PRESSURE FIT CHECK DEVICES AND METHODS - A respiratory mask body defining a breathable air zone for a wearer and having a shut-off valve is provided. In an exemplary embodiment, the mask body includes one or more inlet ports configured to receive one or more breathing air source components. The shut-off valve is operable between a closed position and an open position, and when in a closed position the shut-off valve prevents fluid communication between the one or more inlet ports and the breathable air zone and the shut-off valve returns to an open position in the absence of an applied force. | 08-07-2014 |
20140216475 | SLEEVE-FIT RESPIRATOR CARTRIDGE - A respirator apparatus includes a respirator body, a filter cartridge receiver integral with and extending from the respirator body, and a filter cartridge. The filter cartridge includes a nozzle element being integral with the filter cartridge. The respirator body and filter cartridge are configured to be fluidically coupled through sleeve-fit engagement between the filter cartridge receiver and nozzle element and the filter cartridge receiver and nozzle element define an airflow channel. | 08-07-2014 |
20140216476 | PERSONAL PROTECTIVE EQUIPMENT STRAP RETAINING DEVICES - A strap retaining device having an actuation arm that may engage a retaining tab is provided. In an exemplary embodiment, the strap retaining device includes a frame, a retention tab pivotally connected to the frame, and an actuation arm connected to the frame and having a first actuation element movable towards the retention tab from a neutral position to an actuated. The first actuation ramp is movable in a first plane to cause the retention tab to move in a second plane that is perpendicular to the first plane. | 08-07-2014 |
20140251327 | RESPIRATOR NEGATIVE PRESSURE FIT CHECK DEVICES AND METHODS - A respiratory mask body defining a breathable air zone for a wearer and having a shut-off valve is provided. In an exemplary embodiment, the mask body includes one or more inlet ports configured to receive one or more breathing air source components. The shut-off valve is operable between a closed position and an open position, and when in a closed position the shut-off valve prevents fluid communication between the one or more inlet ports and the breathable air zone and the shut-off valve returns to an open position in the absence of an applied force. | 09-11-2014 |
20150047632 | Air Filtration Device Having Tuned Air Distribution System - A filtering device | 02-19-2015 |
20150047633 | Air Filtration Device Having Subsections Lacking Fluid Communication - A filtering device | 02-19-2015 |
20150136142 | Respirator With Floating Elastomeric Sleeve - A respirator device having an elastomeric sleeve is provided. In an exemplary embodiment, a respirator device as described herein includes a body including a receiver having an elastomeric sleeve and a filter cartridge that includes a rigid nozzle element. The elastomeric sleeve defines a channel, and the elastomeric sleeve is configured to deform around the nozzle element when the nozzle element is inserted into the channel. | 05-21-2015 |
Patent application number | Description | Published |
20150088591 | Method and System for Identifying and Visualizing Work Transfers Using Financial Data - Disclosed are methods and systems for identifying and visualizing the patterns of work transfers for service delivery using financial data. Within a service firm, work is often transferred from one delivery center to another, which results in additional costs and delays in service delivery. To control unnecessary work transfers, sustained patterns of work transfer are identified so that steps can be taken to limit their occurrence. The disclosed methods and systems analyze the relations among the costs transferred from one location to another. | 03-26-2015 |
20150100367 | EXTRAPOLATING A TIME SERIES - Embodiments of the present invention provide a system, method and computer program product for extrapolating a time series. A method comprises receiving multiple sequences of data values over time. Each sequence of data values is partitioned into a corresponding plurality of segments comprising at least one rising segment that rises to a peak data value of the sequence of data values and at least one falling segment that falls to a trough data value of the sequence of data values. For each sequence of data values, a corresponding sequence of segments that rise and fall alternately is generated based on a corresponding plurality of segments for the sequence of data values. An aggregated sequence of segments is generated by aggregating each sequence of segments generated. The aggregated sequence of segments represents a typical model for the sequences of data values. | 04-09-2015 |
20150100368 | FORECASTING A TIME SERIES BASED ON ACTUALS AND A PLAN - Embodiments of the present invention provide a system, method and computer program product for forecasting a time series based on actuals and a plan. A method comprises generating a first and a second sequence of segments that rise and fall alternately based on a first and a second sequence of data values over time, respectively. The first and second sequence of data values represent actual data for an ongoing project and estimated data for a planned project, respectively. The method further comprises aligning at least one segment of the second sequence of segments with at least one segment of the first sequence of segments, and adjusting the estimated data by replacing at least one segment of the second sequence of segments with a scaled version of at least one corresponding aligned segment of the first sequence of segments. The scaled version maintains an estimated total for the planned project. | 04-09-2015 |
20150100369 | SELECTING REPRESENTATIVE MODELS - Embodiments of the present invention provide a system, method and computer program product for selecting representative models. A method comprises generating a first data model representing a first aggregation level, and generating multiple additional data models. Each additional data model represents a lower aggregation level than the first data model. For each additional data model, a corresponding score is determined. For each lower aggregation level, a corresponding combined score is determined based on two or more highest scoring additional data models representing the lower aggregation level. The method further comprises reporting a second aggregation level and a set of data models. The second aggregation level is a lower aggregation level having the highest combined score over all other lower aggregation levels. The set of data models comprises two, or more, highest scoring additional data models representing the second aggregation level. | 04-09-2015 |
20150100379 | GENERATING A SUCCINCT APPROXIMATE REPRESENTATION OF A TIME SERIES - Embodiments of the present invention provide a system, method and computer program product for generating a succinct approximate representation of a time series. A method comprises determining at least one peak data value and at least one trough data value of an input series comprising a sequence of data values over time. The input series is partitioned into multiple segments comprising at least one rising segment that rises to a peak data value and at least one falling segment that falls to a trough data value. A sequence of segments that rise and fall alternately is generated based on the segments. A sequence of totals representing a succinct approximate representation of the input series is generated. Each total comprises a sum of data values for a corresponding segment of the sequence of segments. | 04-09-2015 |