Patent application number | Description | Published |
20080234569 | Mri Probe for Prostate Imaging - A rectal probe adapted for ultrasound and magnetic resonance imaging of the prostate, comprising: a) an ultrasound imaging probe; b) an MRI probe comprising a first magnetic field source for creating a static magnetic field in an MRI imaging region outside the rectal probe, a second magnetic field source for creating a time-varying magnetic field which excites nuclei in the MRI imaging region, and a receiver for receiving NMR signals from the excited nuclei and generating MRI imaging data indicative thereof; and c) a link joining the ultrasound probe and the MRI probe. | 09-25-2008 |
20100001728 | PROBE AND SYSTEM FOR ELECTRON SPIN RESONANCE IMAGING - ESR imaging probe, system, and method are described. The probe is an ex-situ probe, the system comprises the probe and configured for operating the probe, and the method comprises detecting ESR from outside a resonator of the probe. An exemplary embodiment of a probe according to the invention comprises a cooled dielectric resonator, and one sided gradient coils. An exemplary embodiment of the system comprises source current that is configured to supply to the gradient coils currents of up to 100 A in pulses shorter than 1 μsec. | 01-07-2010 |
20100308820 | EX-SITU NMR SPECTROSCOPY - A device for ex situ magnetic resonance analysis is disclosed. The device comprises a static magnetic field unit ( | 12-09-2010 |
20120025828 | METHOD AND DEVICE OF ESTIMATING A DOSE OF IONIZING RADIATION - A device of estimating a dose of ionizing radiation absorbed in an intra bone volume. The device comprises a static magnetic field source adapted to generate a substantially static magnetic field in a probing space having a volume of less than 2 cubic millimeter (mm | 02-02-2012 |
20130093424 | SYSTEM AND METHOD FOR ELECTRON SPIN RESONANCE - A resonator system for electron spin resonance (ESR) is disclosed. The resonator system comprises: a generally planar resonator layer defining an open-loop gapped by a non-conductive gap in the layer, and a microwave feed, positioned configured for transmitting microwave to the resonator layer such as to concentrate, with a quality factor of at least 100, a magnetic field within an effective volume of less than 1 nL above the layer. | 04-18-2013 |
Patent application number | Description | Published |
20120297437 | SYSTEMS AND METHODS PROVIDING BUSINESS DATA VIA A TELEVISION BASED ON A BUSINESS CONTEXT - According to some embodiments, a stream of television information to be displayed on a television may be received. In substantially real time, the received television information may be automatically analyzed to determine a business context. Based on the determined business context and business data stored at a remote business server, an interaction with a viewer may be arranged via the television. | 11-22-2012 |
20130073969 | SYSTEMS AND METHODS FOR WEB BASED APPLICATION MODELING AND GENERATION - According to some embodiments, a service list including a plurality of available services is displayed via a web-based display on a remote client device. Each available service may be, for example, associated with meta-data available at a server. A user selection of at least one of the available services may then be received. A platform list, including a plurality of potential execution platforms, may be displayed to the user and a user selection of one of the potential execution platforms may be received. The server may then automatically generate application code based on the selected available service, the meta-data associated with the selected available service, and the selected execution platform. | 03-21-2013 |
20130325461 | BUSINESS PLATFORM VOICE INTERACTIONS - According to some embodiments, a user device may receive business enterprise information from a remote enterprise server. The user device may then automatically convert at least some of the business enterprise information into speech output provided to a user of the user device. Speech input from the user may be received via and converted by the user device. The user device may then interact with the remote enterprise server in accordance with the converted speech input and the business enterprise information. | 12-05-2013 |
20140343981 | REAL TIME VEHICLE DATA MANAGEMENT AND ANALYTICS - Disclosed is a platform for real time management of vehicle data in an enterprise. The vehicle data may be evaluated by one or more rules. Based on outcomes of the evaluation of the rules, alerts may be provided to a user of the platform and/or to drivers (operators) of the vehicles. Further, the enterprise's backend systems may be invoked to initiate activity in the backend system depending on outcomes of evaluating the rules using the vehicle data. Backend activity may include initiating purchase orders, updating backend system databases, initiating workflows in the enterprise, and other business processes. | 11-20-2014 |
Patent application number | Description | Published |
20100040733 | AROMA STABILIZING METHOD - The present invention provides a method for stabilising the aroma of aroma-rich foodstuffs and their products by reducing the amount of phenols derived from decomposition of polyphenols contained therein. The invention also describes aroma-stabilized foodstuffs as well as their products having a desirable flavour. | 02-18-2010 |
20110027436 | USE OF THIOESTER FLAVORS TO IMPROVE THE FLAVOR QUALITY OF READY-TO-DRINK COFFEE UPON RETORTING AND STORAGE - The invention relates to a thermally processed ready to drink liquid coffee product having an improved flavor quality after thermal processing and storage due to the incorporation of a thioester flavor precursor at a concentration of 0.005 to 7 mg/kg. Preferably, the flavor precursor is furfurylthioacetate, methylthioacetate or prenylthioacetate or combinations thereof and not limited to the above. The invention also relates to a process for preparing the improved flavor quality of a thermally processed coffee product. | 02-03-2011 |
20120141643 | FLAVOUR ACTIVE COMPOSITION - The invention concerns a flavour active composition obtainable by a multi-step reaction comprising a first reaction between an amino compound and a carbonyl compound to obtain a first intermediate reaction mixture, a second reaction with a second amino compound alone or in combination with a carbonyl compound to obtain a second intermediate reaction mixture, further separate reactions with another amino compound alone or in combination with a carbonyl compound to obtain further intermediate reaction mixture, further separate reactions with compounds from other chemical classes such as alcohols, phenolic compounds, epoxydes or organic acids and combinations thereof leading to suitable intermediates, a last reaction comprising a mixture of all the preceding intermediate mixtures alone or in combination with amino and/or carbonyl compounds to obtain the final flavour composition. | 06-07-2012 |
20150044346 | USE OF OXAZOLINES AS AROMA/FLAVOUR PRECURSORS - The present invention relates to compounds based on an oxazoline moiety which liberate Strecker aldehydes under mild and controllable conditions. In addition the invention relates to food products comprising such compounds, and uses of such compounds. | 02-12-2015 |
20150351420 | FOAMING AID AND PROCESS OF ITS PRODUCTION - The present invention relates to a process of making a foaming aid comprising the steps of: (i) providing a composition comprising at least two 4-vinylcatechol monomers, (ii) inducing polymerization of the 4-vinylcatechol monomers of step (i) to obtain a composition comprising polyfunctional phenols. | 12-10-2015 |
Patent application number | Description | Published |
20110306023 | ONLINE LITERACY SYSTEM - In some embodiments, an online literacy system teaches one or all of the skills associated with competence in literacy, including total competence in reading, writing, and punctuation. The system may include a section where the parent or teacher signs up and creates a user account. The system may also include an adult-mediated keyboard and mouse section that is designed to help children learn how to use the keyboard and mouse. The system may also include a skills survey section to continually assess a child's reading and writing skills. The system may also include a pre-reading section that includes exercises selected from a group consisting of sequencing exercises and letter writing exercises using a keyboard. The system may also include a reading/writing skills section that includes reading/writing exercises viewable on a display apparatus to collectively teach all four of the language skills of phonology, semantics, syntax, and text. | 12-15-2011 |
20120082966 | LITERACY SYSTEM - A literacy system provides teaching for reading and writing skills. In one embodiment, the literacy system may include exercises for teaching visual sequencing, motor skills, phonology, semantics, syntax, and text. The literacy system may have a pre-reading section, which includes exercises for developing visual sequencing skills and motor skills prior to teaching the skills of reading and writing words. | 04-05-2012 |
20120178061 | LITERACY EDUCATION SYSTEM FOR STUDENTS WITH AUTISTIC SPECTRUM DISORDERS (ASD) - A literacy system provides teaching for reading and writing skills particularly adapted to students with autistic spectrum disorders (ADS). In one embodiment, the literacy system may include exercises for teaching visual sequencing, motor skills, phonology, semantics, syntax, and text. The literacy system may have a pre-reading section, which includes exercises for developing visual sequencing skills and motor skills prior to teaching the skills of reading and writing words. | 07-12-2012 |
20130084549 | LITERACY EDUCATION SYSTEM FOR STUDENTS WITH AUTISTIC SPECTRUM DISORDERS (ASD) - A literacy system provides teaching for reading and writing skills particularly adapted to students with autistic spectrum disorders (ADS). In one embodiment, the literacy system may include exercises for teaching visual sequencing, motor skills, phonology, semantics, syntax, and text. The literacy system may have a pre-reading section, which includes exercises for developing visual sequencing skills and motor skills prior to teaching the skills of reading and writing words. | 04-04-2013 |
Patent application number | Description | Published |
20120025304 | Trench Semiconductor Device and Method of Manufacturing - A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second electrode in an upper portion of the trench. A dielectric structure is arranged in the trench, including a first portion between the electrodes. The first portion includes, in sequence along a lateral direction from the first sidewall to the second sidewall, a first part including a first dielectric material, a second part including a second dielectric material selectively etchable to the first dielectric material, a third part including the first dielectric material, the first dielectric material of the third part being continuously arranged along a vertical direction from a top side of the first electrode to a bottom side of the second electrode, a fourth part including the second dielectric material and a fifth part including the first dielectric material. | 02-02-2012 |
20120153386 | SEMICONDUCTOR COMPONENT WITH A SPACE SAVING EDGE STRUCTURE - A semiconductor component is disclosed. One embodiment includes a semiconductor body including a first semiconductor layer having at least one active component zone, a cell array with a plurality of trenches, and at least one cell array edge zone. The cell array edge zone is only arranged in an edge region of the cell array, adjoining at least one trench of the cell array, and being at least partially arranged below the at least one trench in the cell array. | 06-21-2012 |
20130137230 | Semiconductor Device with Field Electrode - A method of producing a semiconductor device includes providing a semiconductor body having a first surface and a dielectric layer arranged on the first surface and forming at least one first trench in the dielectric layer. The at least one first trench extends to the semiconductor body and defines a dielectric mesa region in the dielectric layer. The method further includes forming a second trench in the dielectric mesa region distant to the at least one first trench, forming a semiconductor layer on uncovered regions of the semiconductor body in the at least one first trench and forming a field electrode in the second trench. | 05-30-2013 |
20130221427 | Semiconductor Device With Improved Robustness - A semiconductor device includes a first contact in low Ohmic contact with a source region of the device and a first portion of a body region of the device formed in an active area of the device, and a second contact in low Ohmic contact with a second portion of the body region formed in a peripheral area of the device. The minimum width of the second contact at a first surface of the device is larger than the minimum width of the first contact at the first surface so that maximum current density during commutating the semiconductor device is reduced and thus the risk of device damage during hard commutating is also reduced. | 08-29-2013 |
20130248993 | Stress-Reduced Field-Effect Semiconductor Device and Method for Forming Therefor - A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided. | 09-26-2013 |
20130334565 | Method of Manufacturing a Semiconductor Device Using an Impurity Source Containing a Metallic Recombination Element and Semiconductor Device - Source zones of a first conductivity type and body zones of a second conductivity type are formed in a semiconductor die. The source zones directly adjoin a first surface of the semiconductor die. A dielectric layer adjoins the first surface. Polysilicon plugs extend through the dielectric layer and are electrically connected to the source and the body zones. An impurity source containing at least one metallic recombination element is provided in contact with deposited polycrystalline silicon material forming the polysilicon plugs and distant to the semiconductor die. Atoms of the metallic recombination element, for example platinum atoms, may be diffused out from the impurity source into the semiconductor die to reliably reduce the reverse recovery charge. | 12-19-2013 |
20140131792 | Semiconductor Device with Metal-Filled Groove in Polysilicon Gate Electrode - A semiconductor device includes a semiconductor substrate, a body region of a first conductivity type in the substrate, a source region of a second conductivity type opposite the first conductivity type adjacent the body region, and a trench extending into the substrate adjacent the source and body regions. The trench contains a polysilicon gate electrode insulated from the substrate. The device further includes a dielectric layer on the substrate, a gate metallization on the dielectric layer and covering part of the substrate and a source metallization on the dielectric layer and electrically connected to the source region. The source metallization is spaced apart from the gate metallization and covers a different part of the substrate than the gate metallization. A metal-filled groove in the polysilicon gate electrode is electrically connected to the gate metallization, and extends along a length of the trench underneath at least part of the source metallization. | 05-15-2014 |
20140299932 | Semiconductor Device Including a Gate Trench and a Source Trench - A semiconductor device includes a source trench extending into a semiconductor body from a first surface of the semiconductor body. A source trench dielectric and a source trench electrode are in the source trench. A gate trench dielectric and a gate trench electrode are in a gate trench extending into the semiconductor body from the first surface. A body region of a first conductivity type is between the gate and source trenches. A source region of a second conductivity type different from the first conductivity type is between the gate and source trenches. An interconnection electrically couples the body region and the source trench electrode. The interconnection adjoins a lateral face of the source trench electrode and the body region. A source contact is on the source trench electrode at the first surface. | 10-09-2014 |
20150041816 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - The disclosure relates to a semiconductor device including a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an IGFET in a first trench extending from the first surface into the semiconductor body. The device also includes a semiconductor element, which is different from the gate electrode structure of the IGFET and includes polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body. | 02-12-2015 |
20150084121 | Transistor Device with a Field Electrode - A transistor device includes a source region, a drift region, and a body region arranged between the source region and the drift region. A gate electrode is adjacent to the body region, and dielectrically insulated from the body region by a gate dielectric. A field electrode arrangement is adjacent to the drift region and the body region, spaced apart from the gate electrode in a first direction that is perpendicular to a vertical direction in which the source region and the drift region are spaced apart, and includes a field electrode and a field electrode dielectric. The field electrode dielectric dielectrically insulates the field electrode at least from the drift region. The field electrode arrangement has a first width adjacent the drift region, and a second width adjacent the body region and the first width is larger than the second width. | 03-26-2015 |
20150137177 | SEMICONDUCTOR DEVICE HAVING POLYSILICON PLUGS WITH SILICIDE CRYSTALLITES - A semiconductor device includes a field effect transistor structure having source zones of a first conductivity type and body zones of a second conductivity type which is the opposite of the first conductivity type, the source zones adjoining a first surface of a semiconductor die comprising the source and the body zones. The semiconductor device further includes a dielectric layer adjoining the first surface and polysilicon plugs extending through openings in the dielectric layer and electrically connected to the source and the body zones. The polysilicon plugs have silicide crystallites in portions distant to the semiconductor die. | 05-21-2015 |
20150137222 | Stress-Reduced Field-Effect Semiconductor Device and Method for Forming Therefor - A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. An interface between the insulation structure and the surrounding semiconductor body is under tensile stress and the cavity is filled or unfilled so as to counteract the tensile stress. | 05-21-2015 |
20150179752 | Method and Contact Structure for Coupling a Doped Body Region to a Trench Electrode of a Semiconductor Device - A semiconductor body has a first surface, a second opposing surface, an edge, an active device region, and an edge termination region. A trench extends from the first surface into the semiconductor body in the edge termination region and includes sidewalls and an insulated electrode. A first conductivity type doped region extends from the first surface into the semiconductor body in the edge termination region and has a planar outer surface along the first surface that adjoins the trench at a corner of the trench sidewall and the first surface and has a side surface extending from the corner along the trench sidewall. A first interconnect contacts the trench electrode. A second interconnect contacts the outer surface and the side surface. A contact couples the first doped region to the trench electrode and has a bottom surface coplanar with the first surface from a contact edge to the corner. | 06-25-2015 |
20150295078 | Semiconductor Device with Metal-Filled Groove in Polysilicon Gate Electrode - A semiconductor device includes a semiconductor substrate, a body region of a first conductivity type in the substrate, a source region of a second conductivity type adjacent the body region, and a trench extending into the substrate. The trench contains a polysilicon gate electrode insulated from the substrate. The device further includes a dielectric layer on the substrate, a gate metallization on the dielectric layer and covering part of the substrate and a source metallization on the dielectric layer and electrically connected to the source region. The gate metallization includes two spaced apart fingers. The source metallization is spaced apart from the gate metallization and covers a different part of the substrate than the gate metallization. A metal-filled groove in the polysilicon gate electrode is electrically connected to the two spaced apart fingers, and extends along a length of the trench directly underneath at least part of the source metallization. | 10-15-2015 |
20150318361 | Method for Forming a Transistor Device having a Field Electrode - A method for forming a transistor device includes forming a field electrode arrangement by forming a trench in a first surface of a semiconductor body, forming a protection layer on sidewalls of the trench in an upper trench section, forming a dielectric layer on a bottom of the trench and on sidewall sections uncovered by the protection layer, and forming a field electrode at least on the dielectric layer. The method further includes forming a gate electrode and a gate electrode dielectric horizontally spaced apart from the field electrode arrangement with respect to the first surface, forming a body region adjacent the gate electrode and dielectrically insulated from the gate electrode by the gate dielectric, and forming a source region in the body region. | 11-05-2015 |
20150349056 | SEMICONDUCTOR DEVICE COMPRISING TRENCH STRUCTURES - A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes a transistor cell array in a semiconductor substrate. Components of transistor cells of the transistor cell array are disposed in adjacent trench structures in the semiconductor substrate. The trench structures run in a first linear direction parallel to a main surface of the semiconductor substrate. The trench structures include a plurality of concatenated trench segments in a plane parallel to the main surface in the central portion, at least one of the trench segments connecting a first point and a second point of one trench structure, the first point and the second point being arranged along the first linear direction. The trench segment comprises a portion extending in a direction different from the first direction. | 12-03-2015 |
20160049486 | Semiconductor Device Having a Tapered Gate Structure and Method - A semiconductor device includes a semiconductor body having a first surface vertically spaced apart from a second surface. A first trench vertically extends into the semiconductor body from the first surface and includes first and second sidewalls extending across the semiconductor body in a lateral direction that is parallel to the first surface. A field electrode is arranged in first trench and electrically insulated from the semiconductor body by a field dielectric. A first gate electrode is arranged in the first trench. The first gate electrode is electrically insulated from the field electrode by the field dielectric and is electrically insulated from the semiconductor body by a first gate oxide. The first gate electrode includes widened and tapered portions that are continuously connected and adjacent to one another in the lateral direction. The first gate oxide forms a non-perpendicular angle with the first sidewall in the lateral direction. | 02-18-2016 |
20160064477 | Semiconductor Device and a Method for Manufacturing a Semiconductor Device - A semiconductor device comprises a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region. Further it comprises a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the substrate structure and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure. | 03-03-2016 |
20160064496 | Semiconductor Device with Field Electrode and Contact Structure - A semiconductor device includes a field electrode structure with a field electrode and a field dielectric surrounding the field electrode. A semiconductor body includes a transistor section surrounding the field electrode structure and including a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section. The body zone forms a first pn junction with the source zone and a second pn junction with the first drift zone section. A gate structure surrounds the field electrode structure and includes a gate electrode and a gate dielectric separating the gate electrode and the body zone. A contact structure directly adjoins the source and body zones and surrounds the field electrode structure equably with respect to the field electrode structure. | 03-03-2016 |
20160064547 | Semiconductor Device with Field Electrode Structures in a Cell Area and Termination Structures in an Edge Area - A semiconductor device includes field electrode structures regularly arranged in lines in a cell area and forming a first portion of a regular pattern. Termination structures are formed in an inner edge area surrounding the cell area, wherein at least portions of the termination structures form a second portion of the regular pattern. Cell mesas separate neighboring ones of the field electrode structures from each other in the cell area and include first portions of a drift zone, wherein a voltage applied to a gate electrode controls a current flow through the cell mesas. At least one doped region forms a homojunction with the drift zone in the inner edge area. | 03-03-2016 |
20160079238 | Semiconductor Device with Field Electrode Structures, Gate Structures and Auxiliary Diode Structures - A semiconductor device includes field electrode structures extending in a direction vertical to a first surface in a semiconductor body. Cell mesas are formed from portions of the semiconductor body between the field electrode structures and include body zones that form first pn junctions with a drift zone. Gate structures between the field electrode structures control a current flow through the body zones. Auxiliary diode structures with a forward voltage lower than the first pn junctions are electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas. | 03-17-2016 |
20160079376 | Semiconductor Device with Field Electrode Structure - According to an embodiment a semiconductor device includes a semiconductor body with a mesa section that may include a rectifying structure and a first drift zone section. The mesa section surrounds a field electrode structure that includes a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body. A maximum horizontal extension of the field electrode in a measure plane parallel to a first surface of the semiconductor body is at most 500 nm. | 03-17-2016 |
Patent application number | Description | Published |
20080224713 | Device for measuring the loss factor - Disclosed is a device for measuring the loss factor and/or measuring the phase angle between a voltage and a current and/or recording a voltage decay and/or current decay and/or recording partial discharge processes and/or measuring the propagation time on test objects that are to be tested. Said device comprises a housing in which at least one measuring circuit is arranged for measuring and/or recording purposes. A terminal adapter ( | 09-18-2008 |
20080247140 | Arrangement having at least one electronic component - The invention relates to an arrangement comprising at least one electronic component ( | 10-09-2008 |
20100118491 | PORTABLE HIGH-VOLTAGE TEST INSTRUMENT WITH HOUSING - A portable high-voltage test instrument comprises an electronic unit having means for producing a test voltage located in the kV range, a control area cooperating with the electronic unit, at least one terminal for the component or cable to be tested and for an external voltage supply, a housing for permanently accommodating the electronic unit and a cooling system, disposed inside the housing, for cooling the electronic unit, the cooling system comprising an air-cooled assembly having an air inlet and an air outlet. This housing is provided with a lid part that can be moved between an open and a closed position, such that all terminals, the control area and the air inlet and air outlet are covered in closed position thereof, whereas all terminals, the control area and the air inlet and air outlet are unobstructed in open position thereof. | 05-13-2010 |
20110148433 | HIGH-VOLTAGE TRANSFORMER - A high-voltage transformer for providing an alternating voltage in the kV range, comprising at least one secondary winding wound on a coil carrying body surrounding a transformer core, and an insulation housing encapsulating the secondary winding is provided to electrically insulate the secondary winding. Said insulation housing is walled by the coil carrying body carrying the secondary winding and by an enveloping body made of plastic and enveloping the secondary winding so that an annular gap is formed, wherein the annular gap between the secondary winding and the enveloping body is filled with an insulating fluid. The annular gap has a gap width of less than or equal to 20 mm viewed in the cross-section, and the enveloping body has a wall thickness of less than or equal to 20 mm, wherein the plastic is polypropylene, and a separate expansion volume is not provided for the insulating fluid. | 06-23-2011 |
20120013344 | DEVICE FOR DIAGNOSING MEASUREMENT OBJECTS USING A MEASUREMENT VOLTAGE - A device for diagnosing measurement objects using a measurement voltage comprises a housing, in which at least one electric measurement circuit is arranged for carrying out the diagnosis. To this end, the device is designed for the simultaneous diagnosis of a plurality of measurement objects using the same measurement voltage and comprises at least two separate connecting elements for connecting one measurement object each to the measurement voltage. The measurement circuit in turn comprises at least two current detection units and a voltage detection unit, by means of which the current flowing through each measurement object and the measurement voltages present at all measurement objects can be measured at the same time. | 01-19-2012 |
20150316596 | CIRCUIT ASSEMBLY, METHOD FOR PRODUCING A TEST VOLTAGE, AND TESTING DEVICE FOR DETERMINING A LOSS FACTOR, WHICH TESTING DEVICE CONTAINS SAID CIRCUIT ASSEMBLY - A circuit assembly is provided for producing a test voltage for testing a test object, comprising two high voltage sources for producing a positive and negative high voltage of variable amplitude at respective outputs thereof and a high voltage switch assembly, which is arranged between the outputs of the two high voltage sources and the test object and which can be switched suitably in order to successively charge and discharge the test object, wherein furthermore a closed-loop controller is provided, which measures the present test voltage on the test object and acts on the high-voltage switch assembly in order to charge and discharge the test object in a defined manner in dependence on the measured test voltage. | 11-05-2015 |
20150346269 | MOBILE HIGH-VOLTAGE TESTER - A mobile tester is provided for “Very Low Frequency” (VLF) testing of a measurement object, which has means for generating an AC voltage which has an effective amplitude of greater than or equal to 1 kV and a frequency in the range of between 0.01 and 1 Hz, a connection element for connecting the measurement object, and means for measuring and evaluating the test voltage applied to the measurement object and the test current caused thereby. In a first operating mode, the tester autonomously carries out a VLF test using the test voltage generated. The tester also has a communication interface for emitting a synchronization signal or for receiving an externally generated synchronization signal, and the tester is set up, in a second operating mode, to synchronize the generated test voltage with the test voltage generated by at least one further tester of the same type. | 12-03-2015 |
20160069944 | HIGH-POWERED HIGH-VOLTAGE TEST DEVICE - A high-powered, high-voltage test device is provided comprising means for generating a test voltage, wherein the test voltage is an alternating voltage having an amplitude of at least 100 kV at a power of greater than 1 kW. Said means for generating the test voltage have at least two voltage amplifier branches, of which a first voltage amplifier branch contributes to generating the positive voltage half-cycles of the test voltage and a second voltage amplifier branch contributes to generating the negative voltage half-cycles of the test voltage. The high-voltage test device furthermore has a measurement circuit for measuring the test voltage to be applied to a measurement object and the test current consequently caused in the measurement object and is characterized in that each voltage amplifier branch is installed in a separate assembly having integrated active air cooling. | 03-10-2016 |