Patent application number | Description | Published |
20080241597 | RADIO-FREQUENCY OSCILLATOR WITH SPIN-POLARISED CURRENT - This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarised electric current flows. This device comprises a stack of at least a first so-called “anchored” magnetic layer having a fixed magnetisation direction, a second magnetic layer, an amagnetic layer inserted between the above-mentioned two layers, intended to ensure magnetic decoupling of said layers. The oscillator also comprises means of causing a flow of electrons in said layers perpendicular to these layers and, if applicable, of applying an external magnetic field to the structure. The second magnetic layer has an excitation damping factor at least 10% greater than the damping measured in a simple layer of the same material having the same geometry for magnetic excitation having wavelengths equal to or less than the extent of the cone or cylinder of current that flows through the stack that constitutes the magnetoresistive device. | 10-02-2008 |
20080247072 | MAGNETIC TUNNEL JUNCTION MAGNETIC MEMORY - This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: | 10-09-2008 |
20090015972 | LOW NOISE MAGNETIC FIELD SENSOR - The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer ( | 01-15-2009 |
20090039879 | LOW NOISE MAGNETIC FIELD SENSOR USING A LATERAL SPIN TRANSFER - The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer ( | 02-12-2009 |
20090135526 | Magnetoresistive Device - The device comprises two magnetoresistive elements ( | 05-28-2009 |
20090147392 | MAGNETIC ELEMENT WITH THERMALLY-ASSISTED WRITING - This magnetic element with thermally-assisted writing using a field or spin transfer comprises a magnetic reference layer referred to as the “trapped layer”, the magnetisation of which is in a fixed direction; a magnetic storage layer called the “free layer” having a variable magnetisation direction and consisting of a layer made of a ferromagnetic material with magnetisation in the plane of the layer and magnetically coupled to a magnetisation-trapping layer made of an antiferromagnetic material; a semiconductor or an insulating layer with confined-current-paths sandwiched between the reference layer and the storage layer. At least one bilayer consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer is placed in the storage layer between ferromagnetic layer which is in contact with the semiconductor or insulating layer with confined-current-paths and antiferromagnetic layer. | 06-11-2009 |
20090231909 | Magnetoresistive Tunnel Junction Magnetic Device and Its Application to MRAM - The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction ( | 09-17-2009 |
20090290266 | Spin Valve Magnetoresistive Device With Conductive-Magnetic Material Bridges In A Dielectric Or Semiconductor Layer Alternatively Of Magnetic Material - Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers. | 11-26-2009 |
20100003421 | METHOD OF FABRICATING A NANOSTRUCTURE ON A PRE-ETCHED SUBSTRATE - The present invention relates to a method of fabricating a nanostructure, comprising the following steps: prestructuring a substrate ( | 01-07-2010 |
20100039181 | SPIN-TRANSFER TORQUE OSCILLATOR - The invention relates to a method of operating a spin-transfer torque structure to generate voltage oscillations, said structure comprising a first layer of magnetic material having a fixed magnetization vector, a spacer of non magnetic material and a second layer of magnetic material having a free magnetization vector. The method includes the application of a current (j | 02-18-2010 |
20100284104 | MAGNETIC RECORDING MEDIUM - The present invention relates to a magnetic recording medium ( | 11-11-2010 |
20110007560 | SPIN POLARISED MAGNETIC DEVICE - A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer. | 01-13-2011 |
20110013448 | MAGNETIC ELEMENT WITH A FAST SPIN TRANSFER TORQUE WRITING PROCEDURE - A magnetic tunnel junction, comprising a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current through said magnetic tunnel junction, and an insulating layer disposed between said reference layer and first storage layer; characterized in that the magnetic tunnel junction further comprises a polarizing device to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer; and wherein said first storage layer has a damping constant above 0.02. A magnetic memory device formed by assembling an array of the magnetic tunnel junction can be fabricated resulting in lower power consumption. | 01-20-2011 |
20110044099 | HEAT ASSISTED MAGNETIC WRITE ELEMENT - This magnetic element for writing by magnetic field or heat assisted spin transfer comprises a stack consisting of:
| 02-24-2011 |
20110163743 | THREE-LAYER MAGNETIC ELEMENT, METHOD FOR THE PRODUCTION THEREOF, MAGNETIC FIELD SENSOR, MAGNETIC MEMORY, AND MAGNETIC LOGIC GATE USING SUCH AN ELEMENT - This three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon. | 07-07-2011 |
20110200434 | MAGNETIC MICROPARTICLE AND METHOD FOR MANUFACTURING SUCH A MICROPARTICLE - A microparticle includes an oblong flexible tail able to propel the microparticle in a solution along a trajectory using beats transverse to the trajectory, the tail including at least one magnetic element such that the magnetic element causes beats of the tail under the action of an external alternating magnetic field non-collinear with the trajectory and a head mechanically connected to a proximal end of the tail. The microparticle includes at least one layer of material formed from one piece and including the tail and the head, the dimensions and/or shape of the head being selected such that the beats of the proximal end of the tail are limited with respect to the beats of the distal end of the tail and such that the head does not perform a complete revolution around an axis parallel to the trajectory under the effect of the external alternating magnetic field. | 08-18-2011 |
20110215801 | LOW NOISE MAGNETIC FIELD SENSOR USING A LATERAL SPIN TRANSFER - The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer ( | 09-08-2011 |
20110266642 | METHOD FOR PRODUCING A MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNEL JUNCTION THUS OBTAINED - According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber. | 11-03-2011 |
20120075031 | SPIN-VALVE OR TUNNEL-JUNCTION RADIO-FREQUENCY OSCILLATOR, PROCESS FOR ADJUSTING THE FREQUENCY OF SUCH AN OSCILLATOR AND NETWORK CONSISTING OF A PLURALITY OF SUCH OSCILLATORS - A radio-frequency oscillator incorporates a magnetoresistive device within which an electron current is able to flow. The device includes a stack including: a magnetic trapped layer, the magnetization of which is of substantially fixed direction; a magnetic free layer; and a non-magnetic intermediate layer-interposed between the free layer and the trapped layer. The oscillator also includes a mechanism capable of making an electron current flow in the layers constituting the stack and in a direction perpendicular to the plane which contains the layers. At least the free layer is devoid of any material at its center. The electron current density flowing through the stack is capable of generating a magnetization in the free layer in a micromagnetic configuration in the shape of a skewed vortex flowing in the free layer around the center of the free layer. | 03-29-2012 |
20120307556 | MAGNETIC DEVICE WITH EXCHANGE BIAS - A magnetic device includes a magnetic layer having a variable direction of magnetisation, and a first antiferromagnetic layer in contact with the magnetic layer, the first antiferromagnetic layer being able to trap the direction of magnetisation of the magnetic layer. The magnetic device also includes a layer made of a ferromagnetic material in contact with the first antiferromagnetic layer through its face opposite to the magnetic layer, the directions of magnetisation of the magnetic and ferromagnetic layers being substantially perpendicular. A first layer among the magnetic and ferromagnetic layers has a magnetisation, the direction of which is oriented in the plane of the first layer whereas the second of the two layers among the magnetic and ferromagnetic layers has a magnetisation, the direction of which is oriented outside of the plane of the second layer. | 12-06-2012 |
20120313192 | MAGNETIC STICK AND MEMORY CELL COMPRISING SUCH A STACK - A magnetic stack with out of plane magnetisation, the magnetic stack including: a first magnetic layer constituted of one or more materials selected from the following group: cobalt, iron and nickel and magnetic alloys based on the materials; a second layer constituted of a metallic material able to confer to an assembly formed by the first and the second layers a perpendicular anisotropy of interfacial origin when the second layer has a shared interface with the first layer; and a third layer deposited on the first layer, the second layer being deposited on the third layer, the third layer being constituted of a metallic material having a miscibility less than 10% with the material of the first layer. | 12-13-2012 |
20130052343 | METHOD FOR MANUFACTURING PARTICLES SUCH AS MAGNETIC MICRO- OR NANOPARTICLES - A method for manufacturing particles includes depositing on a substrate a layer of a first sacrificial material; depositing on the layer of the first sacrificial material a layer of a second sacrificial material that is different from the first sacrificial material; forming cavities in the layer of the second sacrificial material, the forming including pressing a structured mold against the layer of second sacrificial material; depositing a material for manufacturing the particles, the material covering the layer of the second material and at least partially filling the cavities; selectively removing the second sacrificial material from the first sacrificial material so as to obtain the particles formed by the material and arranged on the layer of the first sacrificial material; and eliminating the first sacrificial material to release the particles. | 02-28-2013 |
20130169371 | SPIN TRANSFER OSCILLATOR - A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency. | 07-04-2013 |
20130169393 | MICROSCALE OR NANOSCALE MAGNETIC TWEEZERS AND PROCESS FOR FABRICATING SUCH TWEEZERS - Magnetic tweezers have two jaws formed by thin magnetic films connected together via a hinge. The magnetic tweezers include a nanoparticle formed by a stack of thin magnetic films. A process for fabricating the magnetic tweezers by techniques used in the fabrication of microelectronic components is presented. | 07-04-2013 |
20130188421 | MAGNETIC DEVICE, AND METHOD FOR READING FROM AND WRITING TO SAID DEVICE - A magnetic device includes a reference layer, the magnetization direction of which is fixed, and a storage layer, the magnetization direction of which is variable. In a write mode, the magnetization direction of the storage layer is changed so as to store a “1” or a “0” in the storage layer. In a reading mode, the resistance of the magnetic device is measured so as to know what is stored in the storage layer. The magnetic device also includes a control layer, the magnetization direction of which is variable. The magnetization direction of the control layer is controlled so as to increase the effectiveness of the spin-transfer torque in the event writing to the storage layer is desired, and to decrease the effectiveness of the spin-transfer torque in the event reading the information contained in the storage layer, without modifying the information, is desired. | 07-25-2013 |
20130250671 | THERMALLY ASSISTED MAGNETIC WRITING DEVICE - A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer. | 09-26-2013 |
20140016405 | THERMALLY ASSISTED MAGNETIC WRITING DEVICE - A magnetic thermally-assisted switching device includes a reference layer, a storage layer magnetised along a variable direction, a spacer that separates the reference layer and the storage layer, and magnetically decouples them, a device for heating the pinning layer so that, during heating, the temperature of the pinning layer exceeds its blocking temperature such that the direction of magnetisation of the storage layer is no longer pinned, a device for applying a writing magnetic torque tending to align the magnetisation of the storage layer along one of two stable magnetisation directions once the blocking temperature is reached. The device also includes a device for applying a magnetic polarisation field at least during the heating phase before the blocking temperature is reached such that the direction of magnetisation of the storage layer is always along the direction of the magnetic polarisation field at the moment that the blocking temperature is reached. | 01-16-2014 |
20150063019 | THERMALLY-ASSISTED MAGNETIC WRITING DEVICE - A thermally-assisted magnetic writing device includes at least one magnetic element including: a reference layer having a stable vortex magnetisation configuration; a device to create a magnetic field to reversibly move the vortex core in the plane of the reference layer; a storage layer having a variable magnetisation configuration; a non-magnetic spacer that separates and magnetically decouples the reference layer and the storage layer; an antiferromagnetic pinning layer in contact with the storage layer, the antiferromagnetic layer being capable of pinning the magnetisation configuration of the storage layer, the storage layer having at least two storage levels corresponding to two pinned magnetisation configurations; a device to heat the antiferromagnetic pinning layer such that when heated, the temperature of the antiferromagnetic pinning layer exceeds its blocking temperature such that the magnetisation configuration of the storage layer is no longer pinned when warm. | 03-05-2015 |