| Patent application number | Description | Published |
|---|
| 20090056800 | Surface Passivation of Silicon Based Wafers - The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed. | 03-05-2009 |
| 20090283141 | Solar Cells and Methods for Manufacturing Same - This invention relates to a method for contacting solar wafers containing one or more layers of temperature sensitive passivation layers by first creating local openings in the passivation layer(s) and then fill the openings with an electric conducting material. In this way, it becomes possible to avoid the relatively high temperatures needed in the conventional method for contacting solar wafers containing one or more passivation layer(s), and thus maintain the excellent passivation properties of newly developed temperature sensitive passivation layer(s) during and after the contacting. | 11-19-2009 |
| 20090314338 | COATING FOR THIN-FILM SOLAR CELLS - This invention relates to a method for producing thin film solar cells with a back-side reflective layer, wherein the solar module is a silicon thin film device placed in-between a back side planar substrate and a front side planar glass superstrate placed in parallel and a distance from the back side planar substrate, wherein the silicon thin film device comprises in successive order from the front side: a front side transparent conductive (TCO) layer, a multi junction thin-film solar conversion layer comprising amorphous and microcrystalline silicon or alloys thereof, a back side TCO-layer, a diffuse reflective layer with one or more local through-going apertures, and a metal layer covering the reflective layer and which is in contact with the back side TCO-layer through the one or more apertures in the reflective layer. The invention also relates to a method for forming the solar cell. | 12-24-2009 |
| 20110120531 | METHOD FOR PRODUCTION OF WAFER BASED SOLAR PANELS - This invention relates to a method for producing solar cells, and photovoltaic panels thereof. The method for producing solar panels comprises employing a number of semiconductor wafers and/or semiconductor sheets of films prefabricated to prepare them for back side metallization, which are placed and attached adjacent to each other and with their front side facing downwards onto the back side of the front glass, before subsequent processing that includes depositing at least one metal layer covering the entire front glass including the back side of the attached wafers/sheets of films. The metallic layer is then patterned/divided into electrically isolated contacts for each solar cell and into interconnections between adjacent solar cells. | 05-26-2011 |
| 20120024368 | BACK CONTACTING AND INTERCONNECTION OF TWO SOLAR CELLS - Method for producing back contacts on silicon solar cells and an interconnection between silicon solar cells where the front surface has been fully treated and the back surface has been processed to the point where the said solar cells can be contacted on the back surface. The method further includes: a) attaching the solar cells onto a transparent superstrate, thereby forming a structure, b) depositing a passivating layer onto the back surface of the structure, c) depositing a silicon material layer onto the back surface of the structure, d) separating the silicon material layer by first areas, e) providing contact sites in areas, f) depositing a metal layer onto the back surface of the structure, g) heating the structure to form silicide, h) optionally opening the metal layer in areas, and i) depositing metal onto the silicide. Device includes solar cells with back contacts and interconnections produced by the method. | 02-02-2012 |
| 20120085403 | METHOD FOR PRODUCING A CONTACT, A CONTACT AND SOLAR CELL COMPRISING A CONTACT - Method for providing at least one contact on a back surface of a solar cell comprising a silicon substrate comprising depositing a passivating layer onto the silicon substrate and thereafter providing at least one contact site and further providing a patterned exposed silicon surface. Then depositing a metal layer and annealing the structure to form metal silicide. Thereafter the process involves optionally removing excess metal and finally applying metal onto the silicide to form at least one contact. A solar cell comprising a back surface, the back surface comprising a contact, produced by the above mentioned method. A contact for back surface of a solar cell comprising a silicon substrate, an amorphous silicon layer deposited onto the silicon substrate, a reflective layer with at least one opening deposited onto the amorphous silicon layer, in the at least one opening there resides silicide, with additional metal covering the silicide. | 04-12-2012 |
| 20130240022 | BACK JUNCTION BACK CONTACT SOLAR CELL MODULE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections. | 09-19-2013 |
| 20130240023 | METHOD FOR METALLIZATION OR METALLIZATION AND INTERCONNECTION OF BACK CONTACT SOLAR CELLS - The present invention relates to cost effective methods for metallisation and or metallisation and interconnection of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections. | 09-19-2013 |
| 20130244371 | CELL AND MODULE PROCESSING OF SEMICONDUCTOR WAFERS FOR BACK-CONTACTED SOLAR PHOTOVOLTAIC MODULE - The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections. | 09-19-2013 |
| 20140238463 | METHOD FOR PRODUCTION OF WAFER BASED SOLAR PANELS - This invention relates to a method for producing solar cells, and photovoltaic panels thereof. The method for producing solar panels comprises employing a number of semiconductor wafers and/or semiconductor sheets of films prefabricated to prepare them for back side metallization, which are placed and attached adjacent to each other and with their front side facing downwards onto the back side of the front glass, before subsequent processing that includes depositing at least one metal layer covering the entire front glass including the back side of the attached wafers/sheets of films. The metallic layer is then patterned/divided into electrically isolated contacts for each solar cell and into interconnections between adjacent solar cells. | 08-28-2014 |
| 20150068597 | SURFACE PASSIVATION OF SILICON BASED WAFERS - The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed. | 03-12-2015 |
