Patent application number | Description | Published |
20090272435 | COMPOSITIONALLY-GRADED AND STRUCTURALLY-GRADED PHOTOVOLTAIC DEVICES AND METHODS OF FABRICATING SUCH DEVICES - A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described. | 11-05-2009 |
20090308454 | INSULATING COATING, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is an article comprising a metallic substrate; an insulating layer; the insulating layer being disposed on the metallic layer in an expanding thermal plasma; and a semiconductor layer; the semiconductor layer being disposed on the insulating layer. Disclosed herein too is a method comprising disposing an insulating layer on a metallic substrate; the insulating layer being in intimate contact with the metallic layer; wherein the insulating layer is derived from a metal-organic precursor, and wherein insulating layer is deposited in an expanding thermal plasma; and disposing a semiconductor layer on the insulating layer. | 12-17-2009 |
20100065099 | Monolithically connected photovoltaic devices on flexible substrates - A method of monolithically interconnecting electrical devices that isolates and interconnects the contacts of neighboring electrical devices such as thin film PV cells, without damaging the surrounding materials. | 03-18-2010 |
20100108132 | NANO-DEVICES AND METHODS OF MANUFACTURE THEREOF - Disclosed herein is a nanodevice. Disclosed herein too is a method of manufacturing a nanodevice. In one embodiment the nanodevice includes a first substrate; a second substrate; a nanowire; the nanowire contacting the first substrate and the second substrate; the nanowire comprising a metal, a semi-conductor or a combination thereof. | 05-06-2010 |
20100236607 | MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE - A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided. | 09-23-2010 |
20100243039 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided comprising a layer. The layer comprises a plurality of grains separated by grain boundaries wherein the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or of the opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the layer is also disclosed. | 09-30-2010 |
20100243056 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed. | 09-30-2010 |
20100259823 | NANOSTRUCTURED ANTI-REFLECTION COATINGS AND ASSOCIATED METHODS AND DEVICES - An anti-reflection coating is described. The coating is disposed on a surface of a substrate. The anti-reflection coating includes an array of substantially transparent nanostructures having a primary axis substantially perpendicular to the surface of the substrate. The array of substantially transparent nanostructures is characterized by a graded refractive index. In some embodiments, each of the nanostructures has a substantially uniform cross-sectional area along the primary axis. Related methods and devices are also described. | 10-14-2010 |
20110012086 | NANOSTRUCTURED FUNCTIONAL COATINGS AND DEVICES - In one aspect of the present invention, an article including a nanostructured functional coating disposed on a substrate is described. The functional coating is characterized by both anti-reflection properties and down-converting properties. Related optoelectronic devices are also described. | 01-20-2011 |
20110067753 | COMPOSITIONALLY-GRADED AND STRUCTURALLY-GRADED PHOTOVOLTAIC DEVICES AND METHODS OF FABRICATING SUCH DEVICES - A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described. | 03-24-2011 |
20110100447 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer is substantially free of silicon. A method of forming the photovoltaic device is provided. | 05-05-2011 |
20110104398 | METHOD AND SYSTEM FOR DEPOSITING MULTIPLE MATERIALS ON A SUBSTRATE - A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented. | 05-05-2011 |
20110143489 | PROCESS FOR MAKING THIN FILM SOLAR CELL - A process for making a component of a thin film solar cell is provided. The process includes steps of making the component in the following sequence: depositing an absorber layer on a transparent substrate, depositing a back-contact layer on the absorber layer and activating the absorber layer. The absorber layer comprises tellurium. A process for making a thin film solar cell is also presented. | 06-16-2011 |
20110146744 | PHOTOVOLTAIC CELL - A photovoltaic (PV) cell is disclosed. The PV cell comprises a plurality of ultrafine structures embedded within a photo-active absorber layer comprising a n-type compound semiconductor. | 06-23-2011 |
20110146788 | PHOTOVOLTAIC CELL - A photovoltaic (PV) cell is disclosed. The PV cell comprises, a plurality of ultrafine structures electrically coupled to, and embedded within, a polycrystalline photo-active absorber layer comprising a p-type compound semiconductor. | 06-23-2011 |
20110259423 | METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS - A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer. | 10-27-2011 |
20110265865 | PHOTOVOLTAIC CELLS WITH CADMIUM TELLURIDE INTRINSIC LAYER - A photovoltaic (PV) cell includes a first electrically conductive layer, a p-type semiconductor layer, and a substantially intrinsic semiconductor layer with a median grain size of at least about five (5) μm and comprising a cadmium and tellurium. The PV cell further includes an n-type semiconductor layer and a second electrically conductive layer. The substantially intrinsic semiconductor layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A photovoltaic cell that includes a first electrically conductive layer comprising a textured substrate and a substantially intrinsic semiconductor layer, with a median grain size of at least about five (5) μm and comprising cadmium and tellurium, is also provided. | 11-03-2011 |
20110269264 | METHODS FOR FABRICATION OF NANOWALL SOLAR CELLS AND OPTOELECTRONIC DEVICES - A photovoltaic device that includes a substrate and a nanowall structure disposed on the substrate surface. The device also includes at least one layer conformally deposited over the nanowall structure. The conformal layer(s) is at least a portion of a photoactive junction. A method for making a photovoltaic device includes generating a nanowall structure on a substrate surface and conformally depositing at least one layer over the nanowall structure thereby forming at least one photoactive junction. A solar panel includes at least one photovoltaic device based on a nanowall structure. The solar panel isolates such devices from its surrounding atmospheric environment and permits the generation of electrical power. Optoelectronic device may also incorporate a photovoltaic device based on a nanowall structure. | 11-03-2011 |
20110290308 | MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE - A monolithically integrated photovoltaic (PV) module is provided and includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer, a p-type semiconductor layer, a substantially intrinsic semiconductor layer with a median grain size of at least about five μm and comprising cadmium and tellurium, and an n-type semiconductor layer. The substantially intrinsic layer is disposed between the p-type and the n-type semiconductor layers forming an active semiconductor stack. The back contact metal layer is disposed between the insulating layer and the active semiconductor stack. The PV module further includes a second electrically conductive layer disposed above the active semiconductor stack, at least one first trench extending through the back contact metal layer, at least one second trench extending through the active semiconductor stack, and at least one third trench extending through the second electrically conductive layer. | 12-01-2011 |
20110315220 | PHOTOVOLTAIC CELL AND METHODS FOR FORMING A BACK CONTACT FOR A PHOTOVOLTAIC CELL - Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material. An interlayer is disposed between the back contact material and the absorber layer and comprises a compositionally graded layer of the back contact material and the absorber layer material. The photovoltaic cell further includes a window layer disposed above the absorber layer. | 12-29-2011 |
20120024360 | PHOTOVOLTAIC DEVICE - A photovoltaic device is provided. The device comprises a transparent conducting layer. A p-type semiconductor window layer is disposed over the n-type transparent conducting layer. An n-type semiconductor layer is disposed over the p-type semiconductor window layer. An n-type cadmium telluride absorber layer is disposed between the p-type semiconductor window layer and the n-type semiconductor layer. | 02-02-2012 |
20120080066 | PHOTOVOLTAIC DEVICES - A photovoltaic device having a down-converting layer disposed on the device, is presented. The down-converting layer have a graded refractive index, wherein a value of refractive index at a first surface of the down-converting layer varies from a value of refractive index at a second surface of the layer. A photovoltaic module having a plurality of such photovoltaic devices is also presented. | 04-05-2012 |
20120080067 | PHOTOVOLTAIC DEVICES - A photovoltaic device including a composite down-converting layer disposed on the device, is presented. The composite down-converting layer includes down-converting material particles dispersed in a matrix. The size of the down-converting material particles is a function of a difference in respective refractive indices (Δn) of the down-converting material and the matrix such that: (i) for Δn less than about 0.05, the size of down-converting material particles is in a range from about 0.5 micron to about 10 microns, and (ii) for Δn at least about 0.05, the size of down-converting material particles is in a range from about 1 nanometer to about 500. A photovoltaic module having a plurality of such photovoltaic devices is also presented. | 04-05-2012 |
20120080070 | PHOTOVOLTAIC DEVICES - In one aspect of the present invention, a photovoltaic device having a down-converting layer is presented. The device includes a glass plate having a first surface and a second surface. The first surface is exposed to ambient radiation. A transparent conductive layer is disposed adjacent to the second surface of the glass plate. The device further includes a first type semiconductor layer disposed adjacent to the transparent conductive layer and a second type semiconductor layer disposed adjacent to the first type semiconductor layer. The down-converting layer is interposed between the second surface of the glass plate and the transparent conducting layer. The down-converting layer exhibits an effective refractive index that has a value between the respective refractive indices of the glass plate and the transparent conductive layer. A photovoltaic module having a plurality of such photovoltaic devices is also presented. | 04-05-2012 |
20120103261 | APPARATUS AND SYSTEMS FOR INTERMIXING CADMIUM SULFIDE LAYERS AND CADMIUM TELLURIDE LAYERS FOR THIN FILM PHOTOVOLTAIC DEVICES - An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer. | 05-03-2012 |
20120132268 | ELECTRODE, PHOTOVOLTAIC DEVICE, AND METHOD OF MAKING - In one aspect of the present invention, a transparent electrode, is presented. The transparent electrode includes a substrate and a transparent layer disposed on the substrate. The transparent layer includes (a) a first region including cadmium tin oxide; (b) a second region including tin and oxygen; and (c) a transition region including cadmium, tin, and oxygen interposed between the first region and the second region, wherein an atomic ratio of cadmium to tin in the transition region varies across a thickness of the transition region. The second region further has an electrical resistivity greater than an electrical resistivity of the first region. A photovoltaic device, a photovoltaic module, a method of making is also presented. | 05-31-2012 |
20120192923 | PHOTOVOLTAIC DEVICE - In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a first semiconductor layer; a p+-type semiconductor layer; and an interlayer interposed between the first semiconductor layer and the p+-type semiconductor layer, wherein the interlayer includes magnesium and tellurium. | 08-02-2012 |
20120260978 | PHOTOVOLTAIC DEVICES AND METHOD OF MAKING - In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided. | 10-18-2012 |
20120305064 | PHOTOVOLTAIC DEVICES AND METHOD OF MAKING - In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided. | 12-06-2012 |
20120318352 | PHOTOVOLTAIC DEVICE WITH REFLECTION ENHANCING LAYER - A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a chalcogenide material. The photovoltaic device further comprises a back contact and a reflection enhancing layer disposed between the absorber layer and the back contact. | 12-20-2012 |
20120325298 | METHODS OF MAKING PHOTOVOLTAIC DEVICES AND PHOTOVOLTAIC DEVICES - One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device. | 12-27-2012 |
20130104985 | PHOTOVOLTAIC DEVICE WITH MANGENESE AND TELLURIUM INTERLAYER | 05-02-2013 |
20130108789 | METHOD FOR DEPOSITION | 05-02-2013 |
20130157405 | MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES - A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing. | 06-20-2013 |
20130160810 | PHOTOVOLTAIC DEVICE AND METHOD OF MAKING - A photovoltaic device having n-i-p or p-i-n configuration is presented. The device includes a first semiconductor layer, a second semiconductor layer and an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer. The intrinsic layer includes cadmium, tellurium and oxygen. Method of making a photovoltaic device is also provided. | 06-27-2013 |
20130192667 | PHOTOVOLTAIC DEVICES AND METHOD OF MAKING - A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented. | 08-01-2013 |
20130233374 | MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE - A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided. | 09-12-2013 |
20130337600 | METHOD OF PROCESSING A SEMICONDUCTOR ASSEMBLY - A method for processing a semiconductor assembly is presented. The method includes thermally processing a semiconductor assembly in a non-oxidizing atmosphere at a pressure greater than about 10 Torr. The semiconductor assembly includes a semiconductor layer disposed on a support, and the semiconductor layer includes cadmium and sulfur. | 12-19-2013 |
20140000673 | PHOTOVOLTAIC DEVICE AND METHOD OF MAKING | 01-02-2014 |
20140000701 | Back Contact Electrodes for Cadmium Telluride Photovoltaic Cells | 01-02-2014 |
20140004655 | MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES | 01-02-2014 |
20140060608 | PHOTOVOLTAIC DEVICE AND METHOD OF MAKING - A photovoltaic device is presented. The device includes an intermediate layer disposed between an absorber layer and a back contact layer. The intermediate layer includes a metal or metalloid of Group 15 and oxygen. Method for making a photovoltaic device is also presented. | 03-06-2014 |
20140083505 | VARYING CADMIUM TELLURIDE GROWTH TEMPERATURE DURING DEPOSITION TO INCREASE SOLAR CELL RELIABILITY - A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition. | 03-27-2014 |
20140094025 | METHOD OF PROCESSING A SEMICONDUCTOR ASSEMBLY - A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source into at least a portion of the semiconductor material; and (c) disposing a window layer on the semiconductor layer after the step (b). | 04-03-2014 |
20140131826 | SPATIALLY DISTRIBUTED CdS IN THIN FILM PHOTOVOLTAIC DEVICES AND THEIR METHODS OF MANUFACTURE - Thin film photovoltaic devices are provided. The device includes a transparent substrate; a transparent conductive oxide layer on the transparent substrate; an n-type window layer on the transparent conductive oxide layer, an absorber layer on the n-type window layer, and a back contact layer on the absorber layer. The n-type window layer includes a plurality of nanoparticles spatially distributed within a medium, with the nanoparticles comprising cadmium sulfide. In one embodiment, the medium has an optical bandgap that is greater than about | 05-15-2014 |
20140170801 | METHODS OF FABRICATING A PHOTOVOLTAIC MODULE, AND RELATED SYSTEM - A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented. | 06-19-2014 |
20140373917 | PHOTOVOLTAIC DEVICES AND METHOD OF MAKING - In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided. | 12-25-2014 |