Patent application number | Description | Published |
20120313161 | SEMICONDUCTOR DEVICE WITH ENHANCED MOBILITY AND METHOD - In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor. | 12-13-2012 |
20120326227 | METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE AND STRUCTURE - In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness. | 12-27-2012 |
20130221428 | PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate. The electronic device can further include a first conductive electrode and a gate electrode within the first trench. The electronic device can still further include a second conductive electrode within the second trench. The electronic device can include a source region within the patterned semiconductor layer and disposed between the first and second trenches. The electronic device can further include a body contact region within the patterned semiconductor layer and between the first and second trenches, wherein the body contact region is spaced apart from the primary surface. Processes of forming the electronic device can take advantage of forming all trenches during processing sequence. | 08-29-2013 |
20130248982 | SEMICONDUCTOR DEVICE WITH ENHANCED MOBILITY AND METHOD - In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor. | 09-26-2013 |
20130248992 | ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN HAVING A CONTACT WITHIN A SCHOTTKY REGION AND A PROCESS OF FORMING THE SAME - An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate, wherein the patterned semiconductor layer defines first and second trenches. The electronic device can also include a first conductive structure within the first trench, a gate electrode within the first trench and overlying the first conductive structure, a first insulating member within the second trench, and a second conductive structure within the second trench. The second conductive structure can include a first portion and a second portion overlying the first portion, the first insulating member can be disposed between the patterned semiconductor layer and the first portion of the second conductive structure; and the second portion of the second conductive structure can contact the patterned semiconductor layer at a Schottky region. Processes of forming the electronic device can take advantage of integrating formation of the Schottky region into a contact process flow. | 09-26-2013 |
20130302958 | METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE HAVING A SHIELD ELECTRODE STRUCTURE - In one embodiment, a method for forming a semiconductor device includes forming trench and a dielectric layer along surfaces of the trench. A shield electrode is formed in a lower portion of the trench and the dielectric layer is removed from upper sidewall surfaces of the trench. A gate dielectric layer is formed along the upper surfaces of the trench. Oxidation-resistant spacers are formed along the gate dielectric layer. Thereafter, an interpoly dielectric layer is formed above the shield electrode using localized oxidation. The oxidation step increases the thickness of lower portions of the gate dielectric layer. The oxidation-resistant spacers are removed before forming a gate electrode adjacent the gate dielectric layer. | 11-14-2013 |
20140054682 | BIDIRECTIONAL FIELD EFFECT TRANSISTOR AND METHOD - In one embodiment, a structure for a semiconductor device has trench shield electrodes formed above and below a gate electrode. The structure can be configured to function as a bidirectional power field effect transistor. | 02-27-2014 |
20140151787 | ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate. The electronic device can further include a first conductive electrode and a gate electrode within the first trench. The electronic device can still further include a second conductive electrode within the second trench. The electronic device can include a source region within the patterned semiconductor layer and disposed between the first and second trenches. The electronic device can further include a body contact region within the patterned semiconductor layer and between the first and second trenches, wherein the body contact region is spaced apart from the primary surface. Processes of forming the electronic device can take advantage of forming all trenches during processing sequence. | 06-05-2014 |
20140264369 | HIGH ELECTRON MOBILITY SEMICONDUCTOR DEVICE AND METHOD THEREFOR - In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure, source electrodes and drain electrodes are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers are included above the gate structure and in spaced relationship with drain regions of the semiconductor device. | 09-18-2014 |
20140264449 | METHOD OF FORMING HEMT SEMICONDUCTOR DEVICES AND STRUCTURE THEREFOR - In one embodiment, a HEMT semiconductor device includes an isolation region that may include oxygen wherein the isolation region may extend thorough an ALGaN and GaN layer into an underlying layer. | 09-18-2014 |
20140264565 | METHOD OF FORMING A TRANSISTOR AND STRUCTURE THEREFOR - In one embodiment, a semiconductor device is formed to include a gate structure extending into a semiconductor material that is underlying a first region of semiconductor material. The gate structure includes a conductor and also a gate insulator that has a first portion positioned between the gate conductor and a first portion of the semiconductor material that underlies the gate conductor. The first portion of the semiconductor material is configured to form a channel region of the transistor which underlies the gate conductor. The gate structure may also include a shield conductor overlying the gate conductor and having a shield insulator between the shield conductor and the gate conductor. The shield insulator may also have a second portion positioned between the shield conductor and a second portion of the gate insulator and a third portion overlying the shield conductor. | 09-18-2014 |
20150028414 | INSULATED GATE SEMICONDUCTOR DEVICE STRUCTURE - In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness. | 01-29-2015 |
20150054068 | SEMICONDUCTOR DEVICE WITH ENHANCED MOBILITY AND METHOD - In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor. | 02-26-2015 |