Patent application number | Description | Published |
20080299469 | LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME - A liquid crystal display panel includes a first substrate, a second substrate opposite the first substrate and a liquid crystal layer. The first substrate includes a lower substrate, a first buffer layer formed on the lower substrate and a first alignment layer formed on the first buffer layer. The first buffer layer includes a polymer-like carbon and the first alignment layer includes a diamond-like carbon thin film containing fluorine. The second substrate includes an upper substrate, a second buffer layer formed on the upper substrate and a second alignment layer formed on the second buffer layer. The second buffer layer includes the polymer-like carbon thin film and the second alignment layer includes the diamond-like carbon thin film containing fluorine. The liquid crystal display panel has improved light transmittance and a low probability of separation between the alignment layer and the substrate. | 12-04-2008 |
20100053513 | Method of Manufacturing a Display Substrate, a Display Substrate Manufactured According to the Method, and a Method for Manufacturing a Display Device Having the Display Substrate - In a method of manufacturing a display substrate, a color filter is formed on a first substrate including a switching element. A pixel electrode is formed on the first substrate including the color filter. An inorganic alignment layer including an inorganic compound is formed on the first substrate including the pixel electrode. Thus, impurities generated from the color filter may be blocked from flowing into a liquid crystal layer, and liquid crystal molecules of the liquid crystal layer may be aligned by the inorganic layer. | 03-04-2010 |
20110309323 | METHOD OF MANUFACTURING NANO DEVICE BY ARBITRARILY PRINTING NANOWIRE DEVICES THEREON AND INTERMEDIATE BUILDING BLOCK USEFUL FOR THE METHOD - A method of manufacturing a nano device by directly printing a plurality of NW devices in a desired shape on a predesigned gate substrate. The method includes preparing an NW solution, preparing a building block for performing decaling onto the substrate by carrying an NW device, forming the NW device by connecting electrodes of each of building block units of the building block using NWs by dropping the NW solution between the electrodes and then through dielectrophoresis, visually inspecting the numbers of NW bridges that are formed between the electrodes of each of the building block units through the dielectrophoresis, grouping the building block units according to the numbers, and decaling the NW device formed on each of the building block units onto the gate substrate by bringing the grouped building block units into contact with the predesigned gate substrate and then detaching the grouped building block units. | 12-22-2011 |
20150182652 | SELF-POWERED PIEZOELECTRIC STRUCTURE AND METHOD OF MANUFACTURING THE SAME - According to an illustrative embodiment of the present invention, a self-powered piezoelectric structure is provided which includes a base material that can be bent by an externally applied force, and a catalyst layer formed on the base material, wherein the catalyst layer is formed by using a mixture of a catalytic material, which can be activated when the energy is applied thereto from an outside, and a piezoelectric material. | 07-02-2015 |
20150182741 | MEDICAL PATCH - A medical patch having an electric potential generating structure which is attachable to a wound to thus regenerate injured skin tissues is provided. The medical patch includes a unit patch having a piezoelectric potential generating structure. The unit patch includes a first layer, a second layer and a piezoelectric nanomaterial disposed between the first and second layers. | 07-02-2015 |
20150188028 | SELF-POWERED GENERATOR, METHOD OF FABRICATING THE SAME AND PIEZOELECTRIC ENERY-HARVESTING DEVICE USING THE GENERATOR - A self-powered generator is provided. The generator includes a piezoelectric nanorod member layer that includes a first layer; a second layer; and a plurality of piezoelectric nanorods disposed between the first and second layers. The piezoelectric nanorod is a biaxially-grown nanorod. When mechanical energy is applied from an outside, an upper half and a lower half of each of the plurality of piezoelectric nanorods generate piezoelectric potentials having opposite polarities, the upper half and the lower half being on both sides of a longitudinal axis along an axis perpendicular to the longitudinal axis. | 07-02-2015 |
Patent application number | Description | Published |
20090017489 | Methods For Modulating The Development Of Dopamine Neuron By The Dopamine D2 Receptor And Compositions Thereof - The present invention relates to a composition for modulating the activation of Nurr1, the composition comprising an agonist or an antagonist of a dopamine D2 receptor, methods for modulating the activation of Nurr1 by the dopamine D2 receptor, a method and composition for treating Nurr1-related diseases using the dopamine D2 receptor, and methods for screening a modulator of a dopamine D2 receptor of a test compound. Accordingly, the activation of Nurr1 can be modulated by treating the dopaminergic neurons with the agonist or the antagonist of the dopamine D2 receptor, thereby enhancing or inhibiting generation of the dopaminergic neurons. | 01-15-2009 |
20120083002 | Methods For Modulating The Development Of Dopamine Neuron By The Dopamine D2 Receptor And Compositions Thereof - The present invention relates to a composition for modulating the activation of Nurr1, the composition comprising an agonist or an antagonist of a dopamine D2 receptor, methods for modulating the activation of Nurr1 by the dopamine D2 receptor, a method and composition for treating Nurr1-related diseases using the dopamine D2 receptor, and methods for screening a modulator of a dopamine D2 receptor of a test compound. Accordingly, the activation of Nurr1 can be modulated by treating the dopaminergic neurons with the agonist or the antagonist of the dopamine D2 receptor, thereby enhancing or inhibiting generation of the dopaminergic neurons. | 04-05-2012 |
20160040126 | REGULATION OF DIFFERENTIATION INTO DOPAMINERGIC NEURONS BY METALLOPROTEASE - The present invention relates to a method for regulating the differentiation of neural stem cells or neural progenitor cells into dopaminergic neural cells, the method comprising increasing or inhibiting the activity of ADAM17 and/or ADAM10 in neural stem cells or neural progenitor cells, and to the use of an activator or inhibitor of ADMA17 and/or ADAM10. | 02-11-2016 |
Patent application number | Description | Published |
20120031459 | Solar Cell and Method of Fabricating the Same - A solar cell according to the embodiment includes a plurality of back electrode patterns spaced apart from each other on a substrate; a light absorption layer including contact patterns to connect electrodes to each other and division patterns to divide cells into unit cells on the substrate formed with the back electrode patterns; top electrode patterns spaced apart from each other by the division patterns on the light absorption layer; and insulating patterns among the back electrode patterns or on the back electrode patterns. The top electrode patterns are filled in the contact patterns and electrically connected to the back electrode patterns. | 02-09-2012 |
20120103416 | SOLAR CELL APPARATUS AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a solar cell apparatus and a method for manufacturing the same. The solar cell apparatus includes a substrate; a back electrode layer on the substrate; a light absorbing layer on the back electrode layer; a front electrode layer on the light absorbing layer; and a connection wire extending from the front electrode layer and connected to the back electrode layer through the light absorbing layer, wherein the connection wire directly makes contact with an inner side of a recess formed in the back electrode layer. | 05-03-2012 |
20120160318 | SOLAR CELL APPARATUS AND METHOD OF FABRICATING THE SAME - Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a support substrate, a back electrode layer on the support substrate, a light absorbing layer covering the back electrode layer while exposing a first expose region of the back electrode layer, and a window layer covering the light absorbing layer while exposing a second expose region of the light absorbing layer. The above layers are formed by moving one mask at a predetermined pitch. The layers have step difference from each other, and are stacked on each other so that the layers are offset from each other by the predetermined pitch. The solar cell apparatus is fabricated by using one mask, so that the solar cell apparatus is very easily formed. | 06-28-2012 |
20130174905 | SOLAR CELL APPARATUS AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a solar cell apparatus and a method for manufacturing the same. The solar cell apparatus includes a substrate including a cell region and an outer peripheral region surrounding the cell region, a cell in the cell region, and a connection electrode connected to the cell and provided in the outer peripheral region. The cell includes a back electrode on the substrate, a light absorbing part on the back electrode, and a front electrode on the light absorbing part. The connection electrode extends from the back electrode. | 07-11-2013 |
20150040962 | Solar Cell and Method of Fabricating the Same - A solar cell according to the embodiment includes a plurality of back electrode patterns spaced apart from each other on a substrate; a light absorption layer including contact patterns to connect electrodes to each other and division patterns to divide cells into unit cells on the substrate formed with the back electrode patterns; top electrode patterns spaced apart from each other by the division patterns on the light absorption layer; and insulating patterns among the back electrode patterns or on the back electrode patterns. The top electrode patterns are filled in the contact patterns and electrically connected to the back electrode patterns. | 02-12-2015 |
Patent application number | Description | Published |
20090114425 | CONDUCTIVE PASTE AND PRINTED CIRCUIT BOARD USING THE SAME - A conductive paste and a printed circuit board using the conductive paste are disclosed. The conductive paste including conductive particles and carbon nanotubes according to the invention, can improve an electrical conductivity of the conductive paste. | 05-07-2009 |
20130167897 | HETEROGENEOUS LAMINATE INCLUDING GRAPHENE, AND THERMOELECTRIC MATERIAL, THERMOELECTRIC MODULE, AND THERMOELECTRIC APPARATUS INCLUDING THE HETEROGENEOUS LAMINATE - A heterogeneous laminate including: graphene; and a thermoelectric inorganic compound disposed on the graphene. | 07-04-2013 |
20140060087 | HEAT RADIATION-THERMOELECTRIC FIN, AND THERMOELECTRIC MODULE AND THERMOELECTRIC APPARATUS INCLUDING THE HEAT RADIATION-THERMOELECTRIC FIN - A heat radiation-thermoelectric fin includes a thermoelectric inorganic material on a heterogeneous laminate of graphene. The heterogeneous laminate may be tube-shaped or plate-shaped, and a metal conductor may be coupled to one or more of the heterogeneous laminate. A thermoelectric module may be formed to include the fin, and a thermoelectric apparatus may include a heat supplier connected to the thermoelectric module. | 03-06-2014 |
20140182646 | THERMOELECTRIC MATERIAL AND THERMOELECTRIC DEVICE INCLUDING THE SAME - A thermoelectric material includes a stack structure including alternately stacked first and second material layers. The first material layer may include a carbon nano-material. The second material layer may include a thermoelectric inorganic material. The first material layer may include a thermoelectric inorganic material in addition to the carbon nano-material. The carbon nano-material may include, for example, graphene. At least one of the first and second material layers may include a plurality of nanoparticles. The thermoelectric material may further include at least one conductor extending in an out-of-plane direction of the stack structure. | 07-03-2014 |
20140230868 | GRAPHENE-CONTAINING COMPOSITE LAMINATE, THERMOELECTRIC MATERIAL, AND THERMOELECTRIC DEVICE INCLUDING THE THERMOELECTRIC MATERIAL - A composite laminate may include graphene and a thermoelectric inorganic material including a single crystal having a hexagonal crystal system. | 08-21-2014 |
20150155066 | ELECTRICAL CONTACT MATERIALS AND METHOD FOR PREPARING THE SAME - Disclosed are electrical contact materials and a method for preparing the same. The electrical contact material includes (i) one or more kinds of metals selected from the group consisting of silver (Ag), copper (Cu) and gold (Au), and an alloy of nickel (Ni); and (ii) carbon nano tubes (CNTs) coated with Ag nanoparticles, Ag plated CNTs, or Ag nanowires, or (i) one or more kinds of metals selected from the group consisting of Ag, Cu, Ni and Au; (ii) a metal oxide that is cadmium oxide, indium oxide, tin oxide, zinc oxide or mixture thereof; and (iii) CNTs coated with Ag nanoparticles, Ag plated CNTs, or Ag nanowires. Accordingly, it is possible to reduce the content of high-priced Ag and to obtain excellent electrical and mechanical properties. | 06-04-2015 |
Patent application number | Description | Published |
20080246067 | Dram device and method of manufacturing the same - In a DRAM device and a method of manufacturing the same, a multiple tunnel junction (MTJ) structure is provided, which includes conductive patterns and nonconductive patterns alternately stacked on each other. The nonconductive patterns have a band gap larger than a band gap of the conductive patterns. A gate insulation layer and a gate electrode are formed on a sidewall of the MTJ structure. A word line is connected with the MTJ structure, and a bit line is connected with one of top and bottom surfaces of the MTJ structure. A capacitor is connected with one of top and bottom surfaces of the MTJ structure that is not connected with the bit line. Current leakage in the DRAM device is reduced and a unit cells may be vertically stacked on the substrate, so a smaller surface area of the substrate is required for the DRAM device. | 10-09-2008 |
20090014781 | Nonvolatile memory devices and methods for fabricating nonvolatile memory devices - A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer. | 01-15-2009 |
20090045448 | Non-volatile memory device and methods of forming the same - Example embodiments provide a non-volatile memory device and methods of forming the same. The non-volatile memory device may define an active region in a semiconductor substrate, and may include a device isolation layer extending in a first direction, bit lines in the semiconductor substrate, the bit lines extending in a second direction which intersects the first direction; word lines extending in the first direction and covering the active region; and charge storage patterns between the word lines and active region, wherein the charge storage patterns may be in pairs on both edges of the bit lines, and a pair of charge storage patterns may be spaced apart from each other by the word lines. | 02-19-2009 |
20090114904 | SEMICONDUCTOR DEVICES HAVING NANO-LINE CHANNELS - A semiconductor device includes a substrate, a gate electrode on the substrate and source and drain electrodes disposed at respective sides of the gate electrode. The device further includes a nano-line passing through the gate electrode and extending into the source and drain electrodes and having semiconductor characteristics. The nano-line may include a nano-wire and/or a nano-tube. A gate insulating layer may be interposed between the nano-line and the gate electrode. The source and drain electrodes may be disposed adjacent respective opposite sidewalls of the gate electrode, and the gate insulating layer may be further interposed between the source and drain electrodes and the gate electrode. Fabrication methods for such devices are also described. | 05-07-2009 |
20090134451 | Semiconductor device and method of fabricating the same - An example embodiment of a non-volatile memory device and an example embodiment of a method of fabricating the same are provided. The non-volatile memory devices includes a tunnel insulation layer on a semiconductor substrate, a charge storage layer on the tunnel insulation layer, a blocking insulation layer including at least one nano dot on the charge storage layer, and a control gate electrode on the blocking insulation layer. | 05-28-2009 |
20100254969 | Cosmetic Composition For Exfoliating Skin Keratin - The present invention relates to a cosmetic composition containing enzymes, and more particularly to a cosmetic composition, which contains, as active ingredients, 1) papain, and 2) at least one selected from the group consisting of theanine and N-acetyl glucosamine, and thus functions to control the skin turnover cycle and promote the exfoliation of skin keratin. | 10-07-2010 |
20110237059 | Non-volatile memory devices with multiple layers having band gap relationships among the layers - A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer. | 09-29-2011 |
20120061752 | SINGLE TRANSISTOR FLOATING-BODY DRAM DEVICES HAVING VERTICAL CHANNEL TRANSISTOR STRUCTURES - Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided. | 03-15-2012 |
Patent application number | Description | Published |
20080280135 | DC PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION APPARATUS IN THE ABSENCE OF POSITIVE COLUMN, METHOD FOR DEPOSITING MATERIAL IN THE ABSENCE OF POSITIVE COLUMN, AND DIAMOND THIN LAYER THEREBY - Disclosed are DC plasma assisted chemical vapor deposition (DC PA-CVD) apparatus operable in the absence of a positive column, a method for depositing a material by DC PA-CVD in the absence of a positive column, and a diamond thin film fabricated thereby. In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible. The diamond thin film fabricated by the method is uniform, contains no impurity, and has excellent crystallinity. | 11-13-2008 |
20090074986 | METHOD OF PREVENTING ABNORMAL LARGE GRAINS FROM BEING INCLUDED INTO THIN NANO-CRYSTALLINE DIAMOND FILM - The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow. | 03-19-2009 |
20090127102 | PLASMA DEPOSITION APPARATUS AND METHOD - A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk. | 05-21-2009 |
20090324824 | METHOD FOR GROWING THIN FILM - Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture. | 12-31-2009 |
20100065892 | Bio-sensor and method of manufacturing the same - A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape. | 03-18-2010 |
20110223332 | METHOD FOR DEPOSITING CUBIC BORON NITRIDE THIN FILM - The present invention relates to a method for depositing a cBN thin film on a substrate to obtain an abrasive material by physical vapor deposition carried out under an atmosphere composed of an inert gas and hydrogen. The abrasive produced by the inventive method comprises the cBN thin film attached firmly to the substrate, which has excellent hardness and durability. | 09-15-2011 |
20130104972 | Se OR S BASED THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME | 05-02-2013 |
20130202849 | POLYCRYSTALLINE DIAMOND FOR DRAWING DIES AND METHOD FOR FABRICATING THE SAME - Provided are polycrystalline diamond for drawing dies, which inhibits preferential wear along specific lattice planes while ensuring wear resistance by controlling the shape and orientation of the grains forming polycrystalline diamond solid, and a method for fabricating the same. The polycrystalline diamond for drawing dies includes a section of diamond having an isotropic granular structure or a radially oriented texture, or has a stacked structure including an isotropic granular layer and a radial texture layer alternately in multiple layers. | 08-08-2013 |
20130260157 | NANOCRYSTALLINE DIAMOND FILM AND METHOD FOR FABRICATING THE SAME - A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate. | 10-03-2013 |
20130266742 | CHEMICAL VAPOR DEPOSITION APPARATUS FOR SYNTHESIZING DIAMOND FILM AND METHOD FOR SYNTHESIZING DIAMOND FILM USING THE SAME - The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable. | 10-10-2013 |
20130273395 | TWO-DIMENSIONAL NANOSTRUCTURED TUNGSTEN CARBIDE AND METHOD FOR FABRICATING THE SAME - 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber. | 10-17-2013 |
20130295387 | METHOD FOR SYNTHESIS OF CUBIC BORON NITRIDE AND CUBIC BORON NITRIDE STRUCTURE - A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N | 11-07-2013 |
20130302592 | METHOD FOR GROWTH OF CARBON NANOFLAKES AND CARBON NANOFLAKE STRUCTURE - A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH | 11-14-2013 |
20130327387 | Se OR S BASED THIN FILM SOLAR CELL AND METHOD FOR FABRICATING THE SAME - The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve crystallinity and electric characteristics of an upper transparent electrode layer ( | 12-12-2013 |
20140004032 | METHOD AND APPARATUS FOR RAPID GROWTH OF DIAMOND FILM | 01-02-2014 |
20140255286 | METHOD FOR MANUFACTURING CUBIC BORON NITRIDE THIN FILM WITH REDUCED COMPRESSIVE RESIDUAL STRESS AND CUBIC BORON NITRIDE THIN FILM MANUFACTURED USING THE SAME - A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage. | 09-11-2014 |
20140326319 | Se OR S BASED THIN FILM SOLAR CELL AND METHOD FOR FABRICATING THE SAME - The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’). | 11-06-2014 |
Patent application number | Description | Published |
20120092329 | TEXT-BASED 3D AUGMENTED REALITY - A particular method includes receiving image data from an image capture device and detecting text within the image data. In response to detecting the text, augmented image data is generated that includes at least one augmented reality feature associated with the text. | 04-19-2012 |
20130004068 | EFFICIENT BLENDING METHODS FOR AR APPLICATIONS - The use of optical character recognition (OCR) in mobile devices is becoming prevalent with the increasing use of mobile devices. One important application for OCR in mobile devices is recognizing and translating the text to a language understandable by the user. Techniques are provided for replacing symbols in an image, while reducing the artifacts as a result of re-rendering of the background image. | 01-03-2013 |
20130177203 | OBJECT TRACKING AND PROCESSING - A method includes tracking an object in each of a plurality of frames of video data to generate a tracking result. The method also includes performing object processing of a subset of frames of the plurality of frames selected according to a multi-frame latency of an object detector or an object recognizer. The method includes combining the tracking result with an output of the object processing to produce a combined output. | 07-11-2013 |
20130177209 | IMAGE CACHE - Techniques described herein provide a method for automatically and intelligently creating and updating an OCR cache while performing OCR using a computing device. An image captured using a camera coupled to the computing device may be matched against prior images stored in the OCR cache. If a match is found, the OCR cache may be updated with new or better information utilizing the new image. The matched prior image may be retained in the OCR cache, or the new captured image may replace the matched prior image in the OCR cache. In one embodiment, techniques are described to remove or reduce glare before storing the image in the OCR cache. In some embodiments, glare is removed or reduced in the absence of performing OCR. | 07-11-2013 |
20140108780 | WIRELESS COMMUNICATIONS USING A SOUND SIGNAL - A method for communicating messages by a mobile device via a sound medium is disclosed. The mobile device receives input sounds from at least one mobile device via the sound medium. From the input sounds, an input sound signal carrying a first message encoded with a first key is detected. The mobile device decodes the first message based on a matching key. An output sound signal carrying a second message encoded with a second key is generated. Further, the mobile device transmits an output sound corresponding to the output sound signal via the sound medium. | 04-17-2014 |
20140112526 | DETECTING EMBOSSED CHARACTERS ON FORM FACTOR - A portable computing device reads information embossed on a form factor utilizing a built-in digital camera and determines dissimilarity between each pair of embossed characters to confirm consistency. Techniques comprise capturing an image of a form factor having information embossed thereupon, and detecting embossed characters. The detecting utilizes a gradient image and one or more edge images with a mask corresponding to the regions for which specific information is expected to be found on the form factor. The embossed form factor may be a credit card, and the captured image may comprise an account number and an expiration date embossed upon the credit card. Detecting embossed characters may comprise detecting the account number and the expiration date of the credit card, and/or the detecting may utilize a gradient image and one or more edge images with a mask corresponding to the regions for the account number and expiration date. | 04-24-2014 |
20160103915 | LINKING THUMBNAIL OF IMAGE TO WEB PAGE - A method, performed by an electronic device, for linking a thumbnail of an image and at least one web page is disclosed. In this method, the image including at least one text region may be accessed in a storage unit. At least one text region may be detected in the image and at least one character string in the at least one text region may be recognized. Further, the method may include selecting the at least one web page from the plurality of web pages and linking the thumbnail of the image and the at least one web page. | 04-14-2016 |
20160104052 | TEXT-BASED THUMBNAIL GENERATION - A method for displaying an image is disclosed. The method may be performed in an electronic device. Further, the method may detect at least one text region in the image and determine at least one text category associated with the at least one text region. Based on the at least one text region and the at least one text category, the method may generate at least one thumbnail from the image and display the at least one thumbnail. | 04-14-2016 |