Bachman, PA
Ben Bachman, Scranton, PA US
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20150208794 | Attachment system for hand-held tools - An attachment system for tools includes a housing, a rotating member having a sloping surface and a catch surface disposed in an open central region of the housing, and a clip member having a clip protrusion with a head and neck portions where the neck portion is sized to be slidably receive in one of a first and second slot of the housing where each slot extends through a wall of the housing to the open central region. The clip protrusion engages the sloping surface causing the rotating member to rotate about a central longitudinal axis to a point as the neck portion moves distally along one of the slots where a catch surface aligns with the clip protrusion and where a channel aligns with a clip protrusion of a second clip member retained in the second slot, thereby retaining the first clip member and releasing the second clip member. | 07-30-2015 |
Ben Bachman, Jefferson Twp, PA US
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20150096150 | Attachment system for hand-held tools - An attachment system for tools includes a housing with a wall defining an open central region. The housing has a first slot and a second slot spaced from the first slot, each slot extending through the wall to the open central region. A rotating member is disposed in the open central region. A clip member has a clip protrusion with neck, head and tip portions, the neck portion sized to be slidably received in one of the slots. The tip portion is configured to engage the rotating member to cause it to rotate about a central longitudinal axis as the neck portion moves distally along one of the slots, causing a catch surface to align with the tip portion and a channel to align with a tip portion of a second clip member retained in the second slot, thereby retaining the first clip member and releasing the second clip member. | 04-09-2015 |
Kurtis E. Bachman, Chester Spring, PA US
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20100048523 | Compounds, Compositions and Methods for Treating Hormone-Dependent Maladies - A composition and method of using are provided, which composition includes: at least one compound selected from the group including a compound having formula (I), a salt thereof, a prodrug thereof, a compound having formula (II), a salt thereof, a prodrug thereof, and a combination thereof, the compounds being described herein, and a combination thereof, and at least one pharmaceutically acceptable carrier; wherein the composition is suitable for administration to a mammal. Methods of using the compound are also provided. | 02-25-2010 |
Kurtis Earl Bachman, Collegeville, PA US
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20120202822 | COMBINATION - The present invention relates to a method of treating cancer in a mammal and to pharmaceutical combinations useful in such treatment. In particular, the method relates to a novel combination comprising the MEK inhibitor: N-{3-[3-cyclopropyl-5-(2-fluoro-4-iodo-phenylamino)6,8-dimethy; -2,4,7-trioxo-3,4,6,7-tetrahydro-2H-pyrido[4,3-d]pyrimidin-1-yl]phenyl}acetamide, or a pharmaceutically acceptable salt or solvate thereof, and the PI3 kinase inhibitor: 2,4-difluoro-N-{2-(methyloxy)-5-[4-(4-pyridazinyl)-6-quinolinyl]-3-pyridinyl}benzenesulfonamide, or a pharmaceutically acceptable salt thereof, pharmaceutical compositions comprising the same, and methods of using such combinations in the treatment of cancer. | 08-09-2012 |
20120245180 | COMBINATION - The present invention relates to a method of treating cancer in a mammal and to pharmaceutical combinations useful in such treatment. In particular, the method relates to a novel combination comprising the MEK inhibitor: N-{3-[3-cyclopropyl-5-[(2-fluoro-4-iodophenyl)amino]-6,8-dimethyl-2,4,7-trioxo-3,4,6,7-tetrahydropyrido[4,3-d]pyrimidin-1(2H)-yl]phenyl}acetamide, or a pharmaceutically acceptable salt or solvate thereof, and the PI3 kinase inhibitor: 2,4-difluoro-N-{2-(methyloxy)-5-[4-(4-pyridazinyl)-6-quinolinyl]-3-pyridinyl}benzenesulfonamide, or a pharmaceutically acceptable salt thereof, pharmaceutical compositions comprising the same, and methods of using such combinations in the treatment of cancer. | 09-27-2012 |
20130317037 | METHOD OF ADMINISTRATION AND TREATMENT - The present invention provides a method of treating a human with cancer comprising detecting at least one mutation in a PIK3CA gene or at least one mutant protein encoded by said PIK3CA gene from at least one first sample from said human and administering to said human an effective amount of 2,4-difluoro-N-{2-(methyloxy)-5-[4-(4-pyridazinyl)-6-quinolinyl]-3-pyridinyl}benzenesulfonamide or a pharmaceutically acceptable salt thereof in a pharmaceutical composition if said at least one sample has at least one mutant PI3K protein or a mutation in the PIK3CA gene. | 11-28-2013 |
Mark Bachman, Sinking Spring, PA US
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20100052174 | COPPER PAD FOR COPPER WIRE BONDING - An integrated circuit package comprising an integrated circuit that includes transistors coupled to copper interconnect structures. The integrated circuit package also comprises copper pads located on the integrated circuit and directly contacting uppermost ones of the copper interconnect structures. Each of copper pads has a thickness of at least about 2 microns. The integrated circuit package further comprises copper wires pressure-welded directly to the copper pads. | 03-04-2010 |
20110163441 | PB-FREE SOLDER BUMPS WITH IMPROVED MECHANICAL PROPERTIES - A method of forming a semiconductor device is disclosed. A semiconductor substrate is provided that has a first contact and an undoped electroplated lead-free solder bump ( | 07-07-2011 |
Mark A. Bachman, Sinking Springs, PA US
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20120153430 | INTEGRATION OF SHALLOW TRENCH ISOLATION AND THROUGH-SUBSTRATE VIAS INTO INTEGRATED CIRCUIT DESIGNS - A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously. | 06-21-2012 |
20120153492 | METHOD OF FABRICATION OF THROUGH-SUBSTRATE VIAS - A method of manufacturing a through-substrate-via structure. The method comprises providing a substrate having a front-side and an opposite back-side. A through-substrate via opening is formed in the front-side of the substrate. The through-substrate-via opening does not penetrate an outer surface of the back-side of the substrate. The through-substrate-via opening is filled with a solid fill material. Portions of the substrate from the outer surface of the back-side of the substrate are removed to thereby expose the fill material. At least portions of the exposed fill material are removed to form a back-side through-substrate via opening that traverses an entire thickness of the substrate. The back-side through-substrate via opening is filled with an electrically conductive material. | 06-21-2012 |
Mark A. Bachman, Sinking Spring, PA US
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20110006389 | SUPPRESSING FRACTURES IN DICED INTEGRATED CIRCUITS - A semiconductor device has a singulated die having a substrate and a die edge. An interconnect dielectric layer is located on the substrate, and integrated circuit has interconnections located within the interconnect dielectric layer. A trench is located in the interconnect dielectric layer and between a seal ring and a remnant of the interconnect dielectric layer. The seal ring is located within the interconnect dielectric layer and between the trench and the integrated circuit, with the remnant of the interconnect dielectric layer being located between the trench and the edge of the die. | 01-13-2011 |
20110006415 | SOLDER INTERCONNECT BY ADDITION OF COPPER - A method of forming an electronic device provides an electronic device substrate having a solder bump pad located thereover. A nickel-containing layer is located over the solder bump pad. A copper-containing layer is formed on the nickel-containing layer prior to subjecting the electronic device to a reflow process. | 01-13-2011 |
20110195544 | SOLDER BUMP STRUCTURE FOR FLIP CHIP SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURE THEREFOR - The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening. | 08-11-2011 |
20120020028 | STACKED INTERCONNECT HEAT SINK - An electronic device includes an integrated circuit and a heat spreader. The integrated circuit includes a substrate with an active via located therein. The heat spreader includes a thermally conductive core. The active via is connected to a corresponding heat spreader via that passes through the thermally conductive core. | 01-26-2012 |
20130149857 | SOLDER INTERCONNECT BY ADDITION OF COPPER - A method of forming an electronic device provides an electronic device substrate having a solder bump pad located thereover. A nickel-containing layer is located over the solder bump pad. A copper-containing layer is formed on the nickel-containing layer prior to subjecting the electronic device to a reflow process. | 06-13-2013 |
20130280864 | STACKED INTERCONNECT HEAT SINK - A heat spreader that is configured to be attached to an integrated circuit substrate. The heat spreader includes a thermally conductive core and a heat spreader via that passes through the thermally conductive core. A connection point of the thermally conductive core is configured to form a solder connection to an integrated circuit substrate plug. | 10-24-2013 |
20140015127 | CONTACT SUPPORT PILLAR STRUCTURE FOR FLIP CHIP SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURE THEREFORE - In one aspect, there is provided a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and has a contact support pillar opening formed therein. Contact support pillars that comprise a conductive metal and have a metal extension are located within the opening of the passivation layer. | 01-16-2014 |
20140220760 | INTEGRATION OF SHALLOW TRENCH ISOLATION AND THROUGH-SUBSTRATE VIAS INTO INTEGRATED CIRCUIT DESIGNS - A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously. | 08-07-2014 |
20150214130 | STACKED INTERCONNECT HEAT SINK - A method is provided. The method includes providing an integrated circuit having a substrate. The method also includes locating a via within the substrate. The method further includes connecting the via to a corresponding heat spreader via. The corresponding heat spreader via may pass through a thermally conductive core of a heat spreader. | 07-30-2015 |
Mark A. Bachman, Allentown, PA US
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20130056868 | ROUTING UNDER BOND PAD FOR THE REPLACEMENT OF AN INTERCONNECT LAYER - The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization layer positioned over the interconnect layers. The outermost metallization layer comprises aluminum and includes at least one bond pad and at least one interconnect runner each electrically connected to an interconnect layer. An under bump metallization layer (UBM) is located over the bond pad, and a solder bump is located over the UBM. | 03-07-2013 |
Mark Adam Bachman, Sinking Spring, PA US
Patent application number | Description | Published |
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20090072393 | Structure and Method for Fabricating Flip Chip Devices - A solder bump structure and an under bump metallurgical structure. An upper surface of a semiconductor substrate comprises a first conductive pad ( | 03-19-2009 |
20090273078 | Electronic packages - Assemblies involving integrated circuit dies (e.g. packaged integrated circuits) and packaged dies electrically connected to circuit boards at times mechanically fail at conducting pads used for electrical interconnection. Such failure is mitigated by underlying appropriate pads with a compliant region having specific characteristics. | 11-05-2009 |
20090298286 | Method of making electronic entities - Many electronic entities such as integrated circuits and discrete power devices have contact pads formed from successively deposited layers of nickel and a second metal such as gold. The resulting pad structure is used to make external electrical connection such as solder connection. Problems associated with failure of such connections are avoidable by inspecting the surface of the nickel layer for excessive small particle formation. | 12-03-2009 |
20100319967 | INHIBITION OF COPPER DISSOLUTION FOR LEAD-FREE SOLDERING - A device fabrication method, according to which a tin-copper-alloy layer is formed adjacent to a copper-plated pad or pin that is used to electrically connect the device to external wiring. Advantageously, the tin-copper-alloy layer inhibits copper dissolution during a solder reflow process because that layer is substantially insoluble in liquid Sn—Ag—Cu (tin-silver-copper) solder alloys under typical solder reflow conditions and therefore shields the copper plating from direct physical contact with the liquefied solder. | 12-23-2010 |
Ted Bachman, Easton, PA US
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20090105814 | METHOD AND SYSTEM FOR PLICATING TISSUE IN A MINIMALLY INVASIVE MEDICAL PROCEDURE FOR THE TREATMENT OF MITRAL VALVE REGURGITATION - A system and method for the treatment of mitral valve regurgitation by reshaping the mitral valve annulus using one or more plications of annular or adjacent tissue each fixed by a retainer is described. The system includes four devices to achieve such percutaneous direct plication annuloplasty. The first is a crossing catheter having a prolapseable or curved tip. Second, a deflecting guide catheter is used to provide a means for guiding the plication device into proper position at the subvalvular region of the mitral valve annulus. Third, the plication device is then used to make plications in the subvalvular region of the mitral valve annulus. Fourth, a “C” shaped retainer with deformable ends is deployed by the plication device in order to retain the plicated tissue in the plicated form. A transseptal approach may be used to plicate and retain tissue on the atrial side of the mitral valve to achieve a reduction in mitral valve regurgitation. | 04-23-2009 |
Ted Bachman, Eashion, PA US
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20130172990 | METHOD AND SYSTEM FOR PLICATING TISSUE IN A MINIMALLY INVASIVE MEDICAL PROCEDURE FOR THE TREATMENT OF MITRAL VALVE REGURGITATION - A system and method for the treatment of mitral valve regurgitation by reshaping the mitral valve annulus using one or more plications of annular or adjacent tissue each fixed by a retainer is described. The system includes four devices to achieve such percutaneous direct plication annuloplasty. The first is a crossing catheter having a prolapseable or curved tip. Second, a deflecting guide catheter is used to provide a means for guiding the plication device into proper position at the subvalvular region of the mitral valve annulus. Third, the plication device is then used to make plications in the subvalvular region of the mitral valve annulus. Fourth, a “C” shaped retainer with deformable ends is deployed by the plication device in order to retain the plicated tissue in the plicated form. | 07-04-2013 |