Atsushi Shigeta
Atsushi Shigeta, Kanagawa JP
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20090017730 | Polishing apparatus and polishing method - A polishing apparatus has a polishing tape ( | 01-15-2009 |
20100015889 | Processing end point detection method, polishing method,and polishing apparatus - The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece. | 01-21-2010 |
20110003537 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus according to the present invention includes a substrate holder ( | 01-06-2011 |
20110081829 | POLISHING ENDPOINT DETECTION METHOD AND POLISHING ENDPOINT DETECTION APPARATUS - Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change. | 04-07-2011 |
Atsushi Shigeta, Mie JP
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20090176372 | CHEMICAL MECHANICAL POLISHING SLURRY AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A chemical mechanical polishing slurry includes at least one water-soluble polymer selected from a group consisting of polyacrylic acid, polymethacrylic acid and a salt thereof each having a weight-average molecular weight of 1,000,000 to 10,000,000, β-cyclodextrin, colloidal silica, and water. | 07-09-2009 |
20110076833 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group. | 03-31-2011 |
20120202348 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device according to an embodiment, includes forming a plurality of films above a substrate in a same chamber without transferring the substrate out of the chamber, forming a target film to be polished above the plurality of films, and polishing the target film by a chemical mechanical polishing (CMP) technique using a film on a front side among the plurality of films as a polishing stopper. | 08-09-2012 |
Atsushi Shigeta, Yokkaichi-Shi JP
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20090124174 | SUBSTRATE TREATING METHOD AND SUBSTRATE TREATING APPARATUS - A substrate treating method includes rotating a substrate in a circumferential direction and polishing a peripheral portion of the substrate by pressing a polishing member to it using a pressing mechanism having a pressing pad. An angle of at least a part of the pressing pad with respect to an axial direction, in which the pressing mechanism makes the pressing pad press the peripheral portion of the substrate, is changed by an angle displacement mechanism which actively displaces the angle so that the polishing is performed depending on a surface to be polished in the peripheral portion. | 05-14-2009 |
20090156000 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles. | 06-18-2009 |
20100193850 | SEMICONDUCTOR MEMORY DEVICE - First and second transistors are formed on a substrate. An interlayer insulating film is formed on the first transistor. A first contact is formed in the interlayer film on a source or a drain of the first transistor. A second contact is formed in the interlayer film on the other of the source or the drain. A first interconnect is formed on the first contact. A magnetoresistive element is formed on the second contact. The magnetoresistive element is arranged in a layer having a height equal to that of the first interconnect from a substrate surface. A third contact is formed in the interlayer film on a source or a drain of the second transistor. A second interconnect is formed on the third contact. The second interconnect is arranged in a layer having a height equal to those of the first interconnect and the magnetoresistive element from the substrate surface. | 08-05-2010 |
Atsushi Shigeta, Kanagawa-Ken JP
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20100151770 | SUBSTRATE POLISHING APPARATUS - A substrate polishing apparatus is provided for preventing excessive polishing and insufficient polishing, and enabling a quantitative setting of an additional polishing time. The substrate polishing apparatus comprises a mechanism for polishing a substrate to be polished; a film thickness measuring device for measuring the thickness of a thin film deposited on the substrate; an interface for entering a target thickness for the polished thin film; a storage area for preserving past polishing results; and a processing unit for calculating a polishing time and a polishing rate. The substrate polishing apparatus builds an additional polishing database for storing data acquired from the result of additional polishing in the storage area. | 06-17-2010 |
Atsushi Shigeta, Yokkaichi JP
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20100015777 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device, includes forming an amorphous silicon film above a semiconductor substrate, partially removing each of the amorphous silicon film and the semiconductor substrate, thereby forming an element isolation trench in a surface of the semiconductor substrate, forming an insulating film above the amorphous silicon film so that the element isolation trench is filled with the insulating film, polishing the insulating film by a chemical-mechanical polishing method with the amorphous silicon film serving as a stopper, thereby planarizing an upper surface of the insulating film, and thermally-treating the amorphous silicon film, thereby converting to a polysilicon film after polishing the insulating film. | 01-21-2010 |
Atsushi Shigeta, Fujisawa-Shi JP
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20080254719 | SUBSTRATE PROCESSING METHOD - In a substrate processing method of polishing a periphery of a substrate, in a state where a first polishing surface to which abrasive grains that include particles having a chemical effect on an oxide-silicon-series or nitride-silicon-series film as a main component have been fixed is brought into contact with the periphery of a semiconductor substrate, polishing the periphery of the substrate by sliding the substrate and the first polishing surface. Moreover, in a state where a second polishing surface to which abrasive grains mainly having a mechanical effect have been fixed is brought into contact with the periphery of the substrate, polishing the periphery of the substrate by sliding the substrate and the second polishing surface. | 10-16-2008 |
20090068841 | Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device - There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety. | 03-12-2009 |
20090239373 | CHEMICAL MECHANICAL POLISHING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer. | 09-24-2009 |
Atsushi Shigeta, Tokyo JP
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20140004773 | PROCESSING END POINT DETECTION METHOD, POLISHING METHOD, AND POLISHING APPARATUS | 01-02-2014 |
20140024294 | POLISHING ENDPOINT DETECTION METHOD AND POLISHING ENDPOINT DETECTION APPARATUS - Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change. | 01-23-2014 |