Patent application number | Description | Published |
20090198074 | INTERMEDIATES AND METHODS FOR THE SYNTHESIS OF HALICHONDRIN B ANALOGS - Methods of synthesizing intermediates useful for the synthesis of halichondrin B analogs are described. | 08-06-2009 |
20110184190 | COMPOUNDS USEFUL IN THE SYNTHESIS OF HALICHONDRIN B ANALOGS - In general, the invention features compounds useful for the synthesis of analogs of halichondrin B, such as eribulin or pharmaceutically acceptable salts thereof, e.g., eribulin mesylate. Exemplary compounds are of formula (I), (II), or (III): | 07-28-2011 |
20120095242 | INTERMEDIATES AND METHODS FOR THE SYNTHESIS OF HALICHONDRIN B ANALOGS - Methods of synthesizing intermediates useful for the synthesis of halichondrin B analogs are described. | 04-19-2012 |
20120289718 | COMPOUNDS USEFUL IN THE SYNTHESIS OF HALICHONDRIN B ANALOGS - In general, the invention features compounds useful for the synthesis of analogs of halichondrin B, such as eribulin or pharmaceutically acceptable salts thereof, e.g., eribulin mesylate. Exemplary compounds are of formula (I), (II), or (III): | 11-15-2012 |
20130123519 | COMPOUNDS USEFUL IN THE SYNTHESIS OF HALICHONDRIN B ANALOGS - In general, the invention features compounds useful for the synthesis of analogs of halichondrin B, such as eribulin or pharmaceutically acceptable salts thereof, e.g., eribulin mesylate. Exemplary compounds are of formula (I), (II), or (III): | 05-16-2013 |
Patent application number | Description | Published |
20120015525 | METHOD OF CLEANING A THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS - A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an inside of the reaction chamber and an inside of an exhaust pipe connected to the reaction chamber to a predetermined temperature; and a removing operation of supplying a cleaning gas containing oxygen gas and hydrogen gas into at least one of the inside of the reaction chamber and the inside of the exhaust pipe heated in the heating operation, heating the cleaning gas to the predetermined temperature to activate the oxygen gas and the hydrogen gas contained in the cleaning gas, and thereafter removing the deposits adhering to the inside of the thin film forming apparatus by the oxygen gas and the hydrogen gas activated. | 01-19-2012 |
20120164844 | METHOD AND APPARATUS FOR FORMING OXIDE FILM ON CARBON FILM - A method for forming an oxide film on a carbon film includes the steps of forming a carbon film on an object to be processed; forming an object-to-be-oxidized layer on the carbon film; and forming an oxide film on the object-to-be-oxidized layer while oxidizing the object-to-be-oxidized layer. | 06-28-2012 |
20120247391 | VERTICAL BATCH-TYPE FILM FORMING APPARATUS - A vertical batch-type film forming apparatus includes: a processing chamber collectively performing a film forming process to a plurality of processing targets; a heating device heating the plurality of processing targets; an exhauster evacuating an inside of the processing chamber; an accommodating container accommodating the processing chamber; a gas supply mechanism supplying a gas used in a process into the accommodating container; and a plurality of gas introducing holes provided in a sidewall of the processing chamber. The gas used in a process is supplied into the processing chamber via the gas introducing holes in a parallel flow to processing surfaces of the plurality of processing targets, and a film forming process is collectively performed to the plurality of processing targets without setting the furnace temperature gradient in the processing chamber. | 10-04-2012 |
20120252224 | METHOD OF DEPOSITING SILICON OXIDE FILM AND SILICON NITRIDE FILM, FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron. | 10-04-2012 |
20130084693 | THIN FILM FORMING METHOD AND FILM FORMING APPARATUS - A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container. | 04-04-2013 |
20130109195 | FILM FORMING APPARATUS AND METHOD OF OPERATING THE SAME | 05-02-2013 |
20130109196 | FILM FORMING APPARATUS AND METHOD OF OPERATING THE SAME | 05-02-2013 |
20140308820 | METHOD OF DEPOSITING SILICON OXIDE FILM AND SILICON NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron. | 10-16-2014 |