| Patent application number | Description | Published |
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| 20120303401 | FLEXIBLE WORKFLOW TASK ASSIGNMENT SYSTEM AND METHOD - Enterprise systems, methods and computer program products are disclosed for facilitating a flexible assignment of tasks to work item queues according to assignment rules and conditions for a business document. The system comprises associating an application object server response to a client workflow form or control, associating an expression to an assignment rule or condition with the work item queue and creating a default work item queue for an expression or series of ordered expressions that do not evaluate true. During runtime, the flexible workflow task assignment process evaluates the sequence of ordered expressions for a given work item queue until no next expression is to be evaluated and assigning the task to the default work item queue. | 11-29-2012 |
| 20130246110 | VISUALIZING RESOURCE REQUIREMENTS ALONG A TIMELINE - A work definition is generated. The work definition includes resource requirements needed to perform tasks in the work definition. The resource requirements are displayed along a timeline. Resource availability can also be displayed along the same timeline. | 09-19-2013 |
| 20140343988 | AUTOMATIC RESOURCE SCHEDULING - An activity is selected. Resource requirement user inputs, indicative of resource requirements for the activity, are received, as are priorities identifying which of the resource requirements are more important than others. Resources are automatically identified based on how well they match the resource requirements, as prioritized, and based on availability. The identified resources are automatically assigned to the activity. | 11-20-2014 |
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| 20100159694 | METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS - Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage. | 06-24-2010 |
| 20110151678 | NOVEL GAP FILL INTEGRATION - Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps. | 06-23-2011 |
| 20110223763 | METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES - The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained. | 09-15-2011 |
| 20120015518 | METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS - Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage. | 01-19-2012 |
| 20120040530 | METHODS FOR FORMING ALL TUNGSTEN CONTACTS AND LINES - Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation. | 02-16-2012 |
| 20130230987 | FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE - Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure. | 09-05-2013 |
| 20140302689 | METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION - Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods. | 10-09-2014 |
| 20150044882 | FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE - Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure. | 02-12-2015 |
| 20150118863 | METHODS AND APPARATUS FOR FORMING FLOWABLE DIELECTRIC FILMS HAVING LOW POROSITY - Provided herein are methods and apparatus for forming flowable dielectric films having low porosity. In some embodiments, the methods involve plasma post-treatments of flowable dielectric films. The treatments can involve exposing a flowable film to a plasma while the film is still in a flowable, reactive state but after deposition of new material has ceased. | 04-30-2015 |
