Patent application number | Description | Published |
20110163452 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS - Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed adjacent to the insulating film. The metal film includes a stacked structure of a first metal film and a second metal film. The oxidation resistance of the first metal film is greater than that of the second metal film. The second metal film has a work function greater than 4.8 eV and is different from the first metal film in material. The first metal film is disposed between the second metal film and the insulating film. | 07-07-2011 |
20120261773 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SYSTEM OF PROCESSING SUBSTRATE - Disclosed is a semiconductor device that comprises a gate insulating film formed on a semiconductor substrate; a first conductive metal-containing film formed on the gate insulating film; a second conductive metal-containing film, formed on the first metal-containing film, to which aluminum is added; and a silicon film formed on the second metal-containing film. | 10-18-2012 |
20140084389 | Method of Manufacturing Semiconductor Device, Substrate Processing Method and Apparatus, Non-Transitory Computer Readable Recording Medium, and Semiconductor Device - Provided are a semiconductor device manufacturing method by which a semiconductor device in which a threshold voltage is suppressed from changing can be manufactured, a substrate processing method and apparatus, a non-transitory computer-readable recording medium, and the semiconductor device. The semiconductor device manufacturing method includes forming an amorphous first oxide film including a first element on a substrate, and modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film. The first element includes at least one element selected from a group consisting of aluminum, yttrium and lanthanum. A concentration of the second element in the second oxide film is controlled to be lower than that of the first element in the second oxide film. | 03-27-2014 |
20140179086 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 06-26-2014 |
20140295667 | Method of Manufacturing Semiconductor Device - To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate. | 10-02-2014 |
20150162200 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SYSTEM OF PROCESSING SUBSTRATE - A semiconductor device includes a gate insulating film formed on a semiconductor substrate; a first conductive metal-containing film formed on the gate insulating film; a second conductive metal-containing film, formed on the first metal-containing film, to which aluminum is added; and a silicon film formed on the second metal-containing film. | 06-11-2015 |
20150200102 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |
20150200103 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |
20150200104 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |