Arayashiki
Satoshi Arayashiki, Tokyo JP
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20100297956 | RECEIVER, TRANSCEIVER, AND MOBILE TERMINAL DEVICE - The invention provides a control method for generating variable operating currents in relation to input signal power and output signal power and achieving both low noise and low power consumption. Emitter follower circuits are attached to output terminals of a frequency divider for generating a local signal. By adjusting the currents flowing through the emitter follower circuits, the amount of currents flowing into mixers is adjusted. When the amount of currents of local signals flowing into the mixers increases, the effect of noise suppression is expected. The amount of the currents flowing through the emitter follower circuits is changed depending on the amplification factor of variable amplifiers. | 11-25-2010 |
Satoshi Arayashiki, Kyoto JP
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20150035607 | POWER AMPLIFIER MODULE - Improvement in linearity is achieved at low costs in a power amplifier module employing an envelope tracking system. The power amplifier module includes a first power amplifier circuit that amplifies a radio frequency signal and that outputs a first amplified signal, a second power amplifier circuit that amplifies the first amplified signal on the basis of a source voltage varying depending on amplitude of the radio frequency signal and that outputs a second amplified signal, and a matching circuit that includes first and second capacitors connected in series between the first and second power amplifier circuit and an inductor connected between a node between the first and second capacitors and a ground and that decreases a gain of the first power amplifier circuit as the source voltage of the second power amplifier circuit increases. | 02-05-2015 |
Yusuke Arayashiki, Oita-Shi JP
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20110187912 | SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid state imaging device according to an embodiment includes a light sensing part which conducts photoelectric conversion on incident light. The solid state imaging device includes a ferroelectric layer including an organic compound on a surface of the light sensing part on which light is incident. The solid state imaging device includes a transparent electrode formed on the ferroelectric layer. | 08-04-2011 |
Yusuke Arayashiki, Oita-Ken JP
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20110244649 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a process to form an element isolation trench on a semiconductor substrate, the element isolation trench having a crystal plane orientation that is different from a crystal plane orientation on a surface of the semiconductor substrate; a process to deposit, on the semiconductor substrate, one of a metal that promotes generation of oxygen radicals and a metal containing film that promotes generation of the oxygen radicals; a process to oxidize the semiconductor substrate; and a process to remove the one of the metal and the metal containing film. | 10-06-2011 |
Yusuke Arayashiki, Kanagawa JP
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20140008603 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer. | 01-09-2014 |
20140264225 | RESISTANCE-VARIABLE MEMORY DEVICE - According to one embodiment, a resistance-variable memory device that is suitable for miniaturization is provided. A resistance-variable memory device according to the embodiment comprises a resistance-variable layer, and an ion supply layer that is laminated on the resistance-variable layer and that contains a silver alloy. A silver concentration of the ion supply layer is in a range of 30-80 atom %. | 09-18-2014 |
Yusuke Arayashiki, Mie-Ken JP
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20150069314 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A memory device according to an embodiment includes an ion metal layer containing a first metal, an opposing electrode, a resistance change layer disposed between the ion metal layer and the opposing electrode, a first layer disposed in a central portion of a space between the ion metal layer and the resistance change layer, and a second layer disposed in an end portion of the space. The first layer contains a second metal. The second layer contains the second metal, and at least one selected from oxygen and nitrogen. | 03-12-2015 |
20150069318 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A memory device according to an embodiment includes an ion metal layer, an opposing electrode, and a resistance change layer. The ion metal layer contains a first metal and a second metal. The resistance change layer is disposed between the ion metal layer and the opposing electrode. The first metal is able to move repeatedly through an interior of the resistance change layer. The concentration of the first metal in a central portion of the ion metal layer is higher than the concentration of the first metal in an end portion of the ion metal layer. | 03-12-2015 |
Yusuke Arayashiki, Mie JP
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20150076435 | STORAGE DEVICE - According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles. | 03-19-2015 |
20150228892 | STORAGE DEVICE - According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles. | 08-13-2015 |
Yusuke Arayashiki, Yokkaichi JP
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20160064661 | RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a resistive random access memory device includes a first electrode and a second electrode. The resistive random access memory device also includes a resistance change layer connected between the first electrode and the second electrode. The resistive random access memory device also includes a conductive layer connected in series to the resistance change layer between the first electrode and the second electrode. The resistive random access memory device in which the conductive layer includes a plurality of first material layers including a first material and a plurality of second material layers including a second material which is different from the first material. | 03-03-2016 |
20160079177 | WAFER AND METHOD FOR MANUFACTURING MICROSCOPIC STRUCTURE ON WAFER - According to one embodiment, a method is disclosed for manufacturing a microscopic structure. The method can include forming a stacked body including a plurality of films on a substrate, an upper surface of a mark region of the substrate for alignment being formed at a position lower than an upper surface of a portion of the substrate where a structural pattern is to be formed, aligning the substrate and a template using a configuration of an upper surface of the stacked body formed in the mark region, coating a material in a liquid form or a semi-liquid form onto the stacked body, pressing the template onto the material; forming a pattern by curing the material, releasing the template from the pattern, and patterning the stacked body using the pattern as a mask. | 03-17-2016 |
Yusuke Arayashiki, Kanagawa-Ken JP
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20100176455 | SEMICONDUCTOR DEVICE HAVING INSULATED GATE FIELD EFFECT TRANSISTORS AND METHOD OF FABRICATING THE SAME - A CMOSFET is composed of a P-channel MOSFET and an N-channel MOSFET formed on a silicon substrate. The P-channel MOSFET is formed a first gate insulating film, a first hafnium layer and a first gate electrode which are stacked on the silicon substrate. The N-channel MOSFET is formed a second gate insulating film, a second hafnium layer and a second gate electrode which are stacked on the silicon substrate. A surface density of the second hafnium layer is lower than a surface density of the first hafnium layer. | 07-15-2010 |
20130161582 | CONDUCTIVE BRIDGING MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a conductive bridging memory device includes a first wiring layer having a plurality of first wiring portions extending in a first direction, a second wiring layer having a plurality of second wiring portions extending in a second direction crossing the first direction, and a resistance change layer provided continuously along a plane having the first direction and the second direction between the first wiring layer and the second wiring layer. Each of the first wiring portions includes a first wiring extending in the first direction. Each of the second wiring portions includes a second wiring extending in the second direction, and an ion metal layer provided between the second wiring and the resistance change layer and extending in the second direction. | 06-27-2013 |
20130228736 | MEMORY DEVICE - According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction. | 09-05-2013 |
20140070156 | MEMORY DEVICE - According to one embodiment, a memory device includes a first electrode, a second electrode and a resistance change film. The resistance change film is connected between the first electrode and the second electrode. An ion metal is introduced in a matrix material in the resistance change film. A concentration of the ion metal in a first region on the first electrode side of the resistance change film is higher than a concentration of the ion metal in a second region on the second electrode side of the resistance change film A layer made of only the ion metal is not provided in the memory device. | 03-13-2014 |
20140284536 | RESISTANCE RANDOM ACCESS MEMORY DEVICE - A resistance random access memory device according to one embodiment includes an interlayer insulation film which a trench is made therein, an ion supply layer provided along a bottom surface and a side surface of the trench, a portion of the ion supply layer provided along the bottom surface is thicker than a portion of the ion supply layer provided along the side surface, and a resistance change layer provided at least below the ion supply layer. | 09-25-2014 |
Yutaka Arayashiki, Hadano-Shi JP
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20090027259 | RADAR OSCILLATOR CAPABLE OF PREVENTING LEAK OF OSCILLATION OUTPUT - In order to enable intermittent output of an oscillation signal without essentially producing a leak in response to a pulse signal indicating a transmission timing of a radar wave, a radar oscillator is provided which employs a configuration in which an operation of an oscillating unit itself is alternately changed between an oscillating state and an oscillation stop state by a switch, rather than a configuration in which an output passage of an oscillation signal is switched to be opened and closed as in a conventional radar oscillator. | 01-29-2009 |