Patent application number | Description | Published |
20090298235 | CLIPLESS INTEGRATED HEAT SPREADER PROCESS AND MATERIALS - In one or more embodiments, a method comprising applying thermo compression to a package assembly including a lid, a die, and a package substrate to assemble the package assembly is disclosed. The method may include assembling the package assembly without coupling a biasing mechanism to the lid. Heat may be applied to a bond head coupled with a pick and place tool. Heat may be applied to a bond stage coupled to a carrier for holding the package assembly during processing. An adhesive applied to the lid or package substrate may be allowed to at least partially cure. The method may further include, in an oven, reflowing a thermal interface material (TIM) coupled to the lid and the die, curing the TIM, and/or curing the adhesive, without using clips. | 12-03-2009 |
20090317641 | METHODS OF PROCESSING A THERMAL INTERFACE MATERIAL - Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s). | 12-24-2009 |
20090320281 | Apparatus and methods of forming package-on-package interconnects - Embodiments of an apparatus and methods of forming a package on package interconnect and its application to the packaging of microelectronic devices are described herein. Other embodiments may be described and claimed. | 12-31-2009 |
20100155935 | Protective coating for semiconductor substrates - Methods for coating a protective material on a semiconductor substrate to protect a back surface thereof from defects are provided, by depositing a diamond-like coating (DLC) material thereon at a low temperature, e.g. between about 150° C. to about 350° C. | 06-24-2010 |
20100193952 | Integrated circuit die containing particale-filled through-silicon metal vias with reduced thermal expansion - A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix. | 08-05-2010 |
20100224993 | Forming sacrificial composite materials for package-on-package architectures and structures formed thereby - Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed. | 09-09-2010 |
20110129963 | Clipless Integrated Heat Spreader Process and Materials - In one or more embodiments, a method comprising applying thermo compression to a package assembly including a lid, a die, and a package substrate to assemble the package assembly is disclosed. The method may include assembling the package assembly without coupling a biasing mechanism to the lid. Heat may be applied to a bond head coupled with a pick and place tool. Heat may be applied to a bond stage coupled to a carrier for holding the package assembly during processing. An adhesive applied to the lid or package substrate may be allowed to at least partially cure. The method may further include, in an oven, reflowing a thermal interface material (TIM) coupled to the lid and the die, curing the TIM, and/or curing the adhesive, without using clips. | 06-02-2011 |
20110159256 | Treatment for a microelectronic device and method of resisting damage to a microelectronic device using same - A treatment for a microelectronic device comprises a dicing tape ( | 06-30-2011 |
20130140014 | METHODS OF PROCESSING A THERMAL INTERFACE MATERIAL - Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s). | 06-06-2013 |
Patent application number | Description | Published |
20080237841 | Microelectronic package, method of manufacturing same, and system including same - A microelectronic package includes a substrate ( | 10-02-2008 |
20080237843 | Microelectronic package including thermally conductive sealant between heat spreader and substrate - A microelectronic package. The package includes a substrate; a die mounted onto the substrate; an integrated heat spreader mounted onto the substrate, and thermally coupled to a backside of the die; and a sealant material bonding the integrated heat spreader to the substrate, the sealant material having a bulk thermal conductivity above about 1 W/m/° C. and a modulus of elasticity lower than a modulus of elasticity of solder. | 10-02-2008 |
20080251932 | Method of forming through-silicon vias with stress buffer collars and resulting devices - A method of forming a via having a stress buffer collar, wherein the stress buffer collar can absorb stress resulting from a mismatch in the coefficients of thermal expansion of the surrounding materials. Other embodiments are described and claimed. | 10-16-2008 |
20090004317 | HIGH THERMAL CONDUCTIVITY MOLDING COMPOUND FOR FLIP-CHIP PACKAGES - A molding compound for use in an integrated circuit package comprises an epoxy and a thermally conductive filler material. The thermally conductive filler material comprises between 70% and 95% of the molding compound and has a thermal conductivity between 10 W/m-K and 3000 W/m-K. | 01-01-2009 |
20090057881 | MICROELECTRONIC PACKAGE AND METHOD OF COOLING SAME - A microelectronic package comprises a chip stack ( | 03-05-2009 |
20090168390 | DIRECTING THE FLOW OF UNDERFILL MATERIALS USING MAGNETIC PARTICLES - Electronic devices and methods for fabricating electronic devices are described. One method includes providing a substrate and a die, and coupling the die to the substrate, wherein a gap remains between the die and the substrate. The method also includes placing an underfill material on the substrate and delivering at least part of the underfill material into the gap. The method also includes controlling the flow of the underfill material in the gap using magnetic force. Other embodiments are described and claimed. | 07-02-2009 |
20110151624 | Coating for a microelectronic device, treatment comprising same, and method of managing a thermal profile of a microelectronic die - A coating for a microelectronic device comprises a polymer film ( | 06-23-2011 |
20110156283 | Use of die backside films to modulate EOL coplanarity of thin packages while providing thermal capability and laser markability of packages - A microelectronic package comprises a die ( | 06-30-2011 |
20110159310 | Methods of fabricating low melting point solder reinforced sealant and structures formed thereby - Methods and associated structures of forming a package structure including forming a low melting point solder material on a solder resist opening location of an IHS keep out zone, forming a sealant in a non SRO keep out zone region; attaching the IHS to the sealant, and curing the sealant, wherein a solder joint is formed between the IHS and the low melting point solder material. | 06-30-2011 |
20110278719 | DIRECTING THE FLOW OF UNDERFILL MATERIALS USING MAGNETIC PARTICLES - Electronic devices and methods for fabricating electronic devices are described. One method includes providing a substrate and a die, and coupling the die to the substrate, wherein a gap remains between the die and the substrate. The method also includes placing an underfill material on the substrate and delivering at least part of the underfill material into the gap. The method also includes controlling the flow of the underfill material in the gap using magnetic force. Other embodiments are described and claimed. | 11-17-2011 |
20120153504 | MICROELECTRONIC PACKAGE AND METHOD OF MANUFACTURING SAME - A microelectronic package includes a substrate ( | 06-21-2012 |
20130017650 | COATING FOR A MICROELECTRONIC DEVICE, TREATMENT COMPRISING SAME,AND METHOD OF MANAGING A THERMAL PROFILE OF A MICROELECTRONIC DIE - A coating for a microelectronic device comprises a polymer film ( | 01-17-2013 |
20130292838 | PACKAGE-ON-PACKAGE INTERCONNECT STIFFENER - Embodiments of the invention relate to a package-on-package (PoP) assembly comprising a top device package and a bottom device package interconnected by way of an electrically interconnected planar stiffener. Embodiments of the invention include a first semiconductor package having a plurality of inter-package contact pads and a plurality of second level interconnect (SLI) pads; a second semiconductor package having a plurality of SLI pads on the bottom side of the package; and a planar stiffener having a first plurality of planar contact pads on the top side of the stiffener electrically connected to the SLI pads of the second package, and a second plurality of planar contact pads electrically connected to the inter-package contact pads of the first package. | 11-07-2013 |
20140091470 | DIE WARPAGE CONTROL FOR THIN DIE ASSEMBLY - Die warpage is controlled for the assembly of thin dies. In one example, a device having a substrate on a back side and components in front side layers is formed. A backside layer is formed over the substrate, the layer resisting warpage of the device when the device is heated. The device is attached to a substrate by heating. | 04-03-2014 |