Patent application number | Description | Published |
20110262764 | Copper Foil for Printed Circuit - Provided is a copper foil for a printed circuit with an electrodeposited ternary-alloy layer composed of copper, cobalt and nickel formed on a surface of the copper foil, wherein the electrodeposited layer comprises dendritic particles grown on the copper foil surface, and the entire surface of the copper foil is covered with particles having an area as seen from above the copper foil surface of 0.1 to 0.5 μm | 10-27-2011 |
20130011690 | Copper Foil for Printed Circuit - Disclosed is a copper foil for printed circuits prepared by forming a primary particle layer of copper on a surface of a copper foil, and then forming a secondary particle layer based on ternary alloy composed of copper, cobalt and nickel on the primary particle layer; in which the average particle size of the primary particle layer is 0.25 to 0.45 μm, and the average particle size of the secondary particles layer based on ternary alloy composed of copper, cobalt and nickel is 0.05 to 0.25 μm. Provided is a copper foil for printed circuits, in which powder fall from the copper foil can be reduced and the peeling strength and heat resistance can be improved by forming a primary particle layer of copper on a surface of a copper foil, and then forming a secondary particle layer based on copper-cobalt-nickel alloy plating on the primary particle layer. | 01-10-2013 |
20130011734 | COPPER FOIL FOR NEGATIVE ELECTRODE CURRENT COLLECTOR OF SECONDARY BATTERY - Provided is a copper foil for a negative electrode current collector of secondary battery, wherein: roughening treatment is performed to both front and rear surfaces of a rolled copper alloy foil; an average surface roughness Ra of both the front and rear surfaces based on laser microscope measurement is 0.04 to 0.20 μm; and the ratio of surface area factor is within a range of 1.0<(C)/(C′)<1.1, when a three-dimensional surface area upon measuring the roughened surfaces with a laser microscope is (A), a two-dimensional area as a projected area upon measuring the three-dimensional surface area is (B), and a calculated value of (A)/(B) is expressed in (C), and when a three-dimensional surface area upon measuring the surfaces of a non-roughened rolled copper or copper alloy foil with a laser microscope is (A′), a two-dimensional area as a projected area upon measuring the three-dimensional surface area is (B′), and a calculated value of (A′)/(B′) is expressed in (C′). This invention aims to provide a copper foil for a negative electrode current collector of a secondary battery in which the adhesiveness of the secondary battery active material is superior, and which can reduce the variation in the area weight of the secondary battery active material, and has superior weather resistance and thermal resistance. | 01-10-2013 |
20130071652 | LAMINATE FOR FLEXIBLE WIRING - A laminate for flexible wiring in which copper plating is entirely or locally applied on a copper foil that is cladded on an insulating resin substrate, characterized in that a ratio A=[(200)/{(111)+(200)+(220)+(311)}]×100, i.e. a ratio of an area intensity of a peak in the X-ray diffraction of the copper plating surface is more than 90. The present invention can provide the laminate for flexible wiring in which copper plating is entirely or locally applied on a copper foil cladded on an insulating resin substrate, characterized in having particularly high bendability and enables the formation of fine patterns, namely, high dense patterns of wiring. | 03-21-2013 |
20140037976 | Rolled Copper or Copper-Alloy Foil Provided with Roughened Surface - Provided is a rolled copper or copper-alloy foil having a roughened surface, the rolled copper or copper-alloy foil subjected to roughening treatment with copper fine grains wherein a copper base plating layer is provided between the copper roughened layer and the rolled copper or copper-alloy foil. An object of the present invention is to provide a roughened rolled copper-alloy foil having fewer craters, the presence of which is a serious disadvantage unique to a rolled copper-alloy foil having a roughened surface. In particular, provided is a rolled copper or copper-alloy foil in which the development of craters caused by inclusions present in or near a surface of the base material can be controlled. | 02-06-2014 |
20140057123 | COPPER FOIL FOR PRINTED CIRCUIT - Provided is a copper foil with surface treated layers, wherein a copper foil or a copper alloy foil includes a plurality of surface treated layers configured from a roughened layer formed on the copper foil or the copper alloy foil by roughening treatment, a heat-resistant layer made from a Ni—Co layer formed on the roughened layer, and a weathering layer and a rust-preventive layer which contain Zn, Ni, and Cr and is formed on the heat-resistant layer, and the surface treated layers having a (total Zn)/[(total Zn)+(total Ni)] ratio of 0.13 or more and 0.23 or less. In a copper foil clad laminate which uses a copper foil for a printed circuit obtained by performing roughening treatment on a surface of a copper foil and then forming a heat-resistant layer and a rust-preventive layer thereon, and to which silane coupling treatment is subsequently performed, the copper foil for a printed circuit can further inhibit the deterioration in adhesion caused by the acid infiltration into the interface of the copper foil circuit and the substrate resin upon performing acid treatment or chemical etching to the substrate after forming a fine-pattern printed circuit. Thus, the copper foil for printed circuit has superior acid-resistant adhesive strength and superior alkali etchability. | 02-27-2014 |
20140093743 | Liquid Crystal Polymer Copper-Clad Laminate and Copper Foil Used For Said Laminate - Provided is a copper-clad laminate obtainable by bonding a copper foil on which roughening treatment including copper-cobalt-nickel alloy plating is performed and a liquid crystal polymer to each other, wherein the copper-clad laminate is free from a roughening particle residue on a surface of the liquid crystal polymer resin after copper foil circuit etching. The copper-clad laminate obtainable by bonding a copper foil and a liquid crystal polymer to each other, wherein the copper foil includes a copper primary particle layer formed on a surface bonded to the liquid crystal polymer and a secondary particle layer formed on the primary particle layer and made from a ternary alloy including copper, cobalt, and nickel; the primary particle layer has an average particle size of 0.25 to 0.45 μm; and the secondary particle layer has an average particle size of 0.05 to 0.25 μm. | 04-03-2014 |
Patent application number | Description | Published |
20120086079 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of a first conductivity type; an insulation layer on the first semiconductor layer; a second semiconductor layer in the insulation layer; an active element in the second semiconductor layer; a first semiconductor region on the first semiconductor layer and of a second conductivity type; a second semiconductor region in the first semiconductor region and of the second conductivity type with a higher impurity concentration than the first semiconductor region; a first conductor in a through hole in the insulation layer and connected to the second semiconductor region; a second conductor above or within the insulation layer, the second conductor surrounding the first conductor such that an outside edge thereof is outside the second semiconductor region; a third conductor connecting the first and second conductors; and a fourth conductor connected to the first semiconductor layer. | 04-12-2012 |
20130043537 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed. | 02-21-2013 |
20150126002 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed. | 05-07-2015 |