Patent application number | Description | Published |
20100039865 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MAKING THE SAME - A non-volatile semiconductor memory device according to the present invention includes a substrate; a first word-line provided above the substrate surface, the first word-line having a plate shape in an area where a memory cell is formed; a second word-line provided above the first word-line surface, the second word-line having a plate shape; a plurality of metal wirings connecting the first and second word-lines with a driver circuit; and a plurality of contacts connecting the first and second word-lines with the metal wirings. The contact of the first word-line is formed in a first word-line contact area. The contact of the second word-line is formed in a second word-line contact area. The first word-line contact area is provided on a surface of the first word-line that is drawn to the second word-line contact area. | 02-18-2010 |
20110175159 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - Each of the memory blocks includes: a first conductive layer expanding in parallel to the substrate over the first area, n layers of the first conductive layers being formed in a lamination direction and shared by the plurality of memory strings; a first semiconductor layer; and an electric charge accumulation layer. The memory strings are arranged with m columns in a second direction for each of the memory blocks. The wiring layers are arranged in the second direction, formed to extend to the vicinity of one end of the first conductive layer in the first direction from one side of the memory block, and connected via contact plugs to the first conductive layers. A relation represented by (Formula 1) is satisfied: (Formula 1) m>=n | 07-21-2011 |
20120132981 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode formed to surround the floating gate electrode via a block dielectric film are provided. | 05-31-2012 |
20140252450 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode formed to surround the floating gate electrode via a block dielectric film are provided. | 09-11-2014 |
Patent application number | Description | Published |
20150206590 | MEMORY SYSTEM - According to one embodiment, a memory system includes a nonvolatile semiconductor memory device and a controller. The system includes the nonvolatile semiconductor memory device including a plurality of memory cells; and the controller configured to control one of read operation, write operation, and a use frequency of the read operation or the write operation on the nonvolatile semiconductor memory device, and configured to change controlling for a memory cell belonging to a first group of the memory cells and to change controlling for a memory cell belonging to a second group located on an upper side or a lower side of the memory cell belonging to the first group. | 07-23-2015 |
20150221667 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device according to one embodiment includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film. | 08-06-2015 |
20150263036 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, the columnar section includes a first region having a first diameter and a second region having a second diameter smaller than the first diameter. The plurality of electrode layers include a first electrode layer adjacent to the first region and a second electrode layer adjacent to the first region, and a third electrode layer adjacent to the second region and a fourth electrode layer adjacent to the second region. A distance between the third electrode layer and the fourth electrode layer is smaller than a distance between the first electrode layer and the second electrode layer. | 09-17-2015 |
20160064041 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor memory device includes a substrate; a memory cell array including a plurality of memory cells stacked on the substrate; an inter-layer insulating layer provided on the memory cell array; and a first control circuit. The first control circuit includes a first transistor and first semiconductor layer, a number of a grain boundary of the first semiconductor layer is not less than a number of a grain boundary of the substrate, and the first control circuit is provided on the inter-layer insulating layer and electrically connected to the memory cells. | 03-03-2016 |
20160079164 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer. | 03-17-2016 |
Patent application number | Description | Published |
20140252443 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, a first layer formed above the semiconductor substrate, a first conductive layer, an inter-electrode insulating layer, and a second conductive layer sequentially stacked above the first layer, a memory film formed on an inner surface of each of a pair of through holes provided in the first conductive layer, the inter-electrode insulating layer, and the second conductive layer and extending in a stacking direction, a semiconductor layer formed on the memory film in the pair of through holes, and a metal layer formed in part of the pair of through holes and/or in part of a connection hole that is provided in the first layer and connects lower end portions of the pair of through holes, the metal layer being in contact with the semiconductor layer. | 09-11-2014 |
20140284607 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In this embodiment, a mask material is formed above a film to be processed, and a plurality of sacrifice films are formed above the mask material, each of the sacrifice films having a columnar shape. Then, a sidewall film is formed on a sidewall of the sacrifice films, and then the sacrifice films are removed. Thereafter, the sidewall films are caused to flow. In addition, a plurality of holes are formed in the mask material using the sidewall film as a mask. Then, isotropic etching is performed for the mask material to etch back the sidewall of the mask material with respect to a sidewall of the sidewall film by a first distance. Thereafter, a deposition layer is deposited inside the plurality of holes to close an opening of the plurality of holes with the deposition layer. Anisotropic etching is conducted to remove the deposition layer in the opening. | 09-25-2014 |
20150036422 | MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE, MAGNETIC MEMORY, AND METHOD OF DRIVING MAGNETIC STORAGE ELEMENT - A magnetic storage element according to an embodiment includes: a magnetic nanowire having a cross-sectional area varying in a first direction, the magnetic nanowire having at least two positions where the cross-sectional area is minimal; first and second electrode groups having the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a first region where the first electrodes overlap the second electrodes with the magnetic nanowire interposed in between and a second region where neither the first electrodes nor the second electrodes exist with the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a third region where the first electrodes exist and the second electrodes do not exist with the magnetic nanowire interposed in between and a fourth region where the first electrodes do not exist and the second electrodes exist with the magnetic nanowire interposed in between. | 02-05-2015 |
Patent application number | Description | Published |
20120299458 | SPARK PLUG FOR INTERNAL-COMBUSTION ENGINES - A spark plug for internal-combustion engines includes a housing, an insulator, a center electrode, and an earth electrode. A gas guiding sections equipped with slopes that slope inwardly as they approach toward a tip side from a circumference surface of the housing and guide surfaces that are disposed on both sides in a circumferential direction of the slopes are formed in a tip part of the housing. The gas guiding sections are formed in the circumferential direction within a 90-degree range measured relative to the center of the earth joint section, which is a junction of the housing and the earth electrode, in the circumferential direction. When the spark plug is mounted to the engine, it is constituted so that the gas guiding sections are projected into a combustion chamber. | 11-29-2012 |
20130015755 | SPARK PLUG DESIGNED TO ENSURE DESIRED DEGREE OF IGNITABILITY OF FUELAANM INOHARA; TakayukiAACI Okazaki-shiAACO JPAAGP INOHARA; Takayuki Okazaki-shi JPAANM OKABE; ShinichiAACI Aichi-kenAACO JPAAGP OKABE; Shinichi Aichi-ken JPAANM AOCHI; TakanobuAACI Nishio-shiAACO JPAAGP AOCHI; Takanobu Nishio-shi JPAANM IWAMI; AtsushiAACI Kariya-shiAACO JPAAGP IWAMI; Atsushi Kariya-shi JPAANM SHIBATA; MasamichiAACI Toyota-shiAACO JPAAGP SHIBATA; Masamichi Toyota-shi JP - A spark plug for an internal combustion engine is provided which is equipped with a tip protrusion disposed on a top of a hollow cylindrical housing of the spark plug. The spark plug also includes a center electrode retained in a porcelain insulator disposed inside the housing and a ground electrode is joined to the housing so as to form a spark gap. The tip protrusion serves to direct a flow of gas to be ignited by a spark produced in the spark gap and is shaped to have a radial width extending in a radial direction of the housing and a circumferential width extending in a circumferential direction of the cylindrical housing. The radial width is greater than the circumferential width. This enhances the efficiency in guiding the flow of gas toward the spark gap. | 01-17-2013 |
20130214668 | SPARK PLUG FOR INTERNAL COMBUSTION ENGINE - The spark plug for an internal combustion engine has a cylindrical housing, a center electrode held inside the housing, a ground electrode connected to the housing and forming a spark discharge gap between itself and the center electrode, and, an end projection projected from the end portion of the housing toward the head end side of the spark plug. The center electrode and ground electrode are arranged so that most of the spark discharge gap is disposed over the open areas and the electrode area in which the end projection is arranged. | 08-22-2013 |
20140159563 | SPARK PLUG FOR INTERNAL COMBUSTION ENGINES - A spark plug for internal combustion engines is provided, where the spark plug includes a cylindrical housing, a cylindrical insulation porcelain part, a center electrode, and a ground electrode. The insulation porcelain is housed in the housing and the center electrode is held inside the insulation porcelain. The ground electrode protrudes from a top end portion of the housing. A spark discharge gap is left between the ground and center electrodes. Further, first to third projections are formed on the top end portion. The first projection is opposed to the ground electrode with the center electrode therebetween. The second projection is closer to the ground electrode than to the first projection. The third projection is closer to the first projection than to the ground electrode. | 06-12-2014 |
20150337791 | SPARK PLUG FOR INTERNAL COMBUSTION ENGINE - A spark plug has a housing, a pair of center and ground electrodes configured to define a spark gap therebetween, a guide member and an oblique surface. The ground electrode has a standing portion that stands distalward from a distal end of the housing. The guide member is configured to guide the flow of an air-fuel mixture in a combustion chamber of an engine to the spark gap. The guide member protrudes distalward from the distal end of the housing at a different circumferential position from the ground electrode. The oblique surface is formed at the distal end of the housing so as to be circumferentially positioned between the guide member and the standing portion of the ground electrode. The oblique surface is oblique to the axial direction of the spark plug so that the radial distance between the oblique surface and the center electrode decreases in the distalward direction. | 11-26-2015 |
20150337792 | SPARK PLUG FOR INTERNAL COMBUSTION ENGINE - A spark plug for an internal combustion engine includes a tubular housing, a tubular insulator, a center electrode, a ground electrode and a guide member. The guide member is configured to guide the flow of an air-fuel mixture in a combustion chamber of the engine to a spark gap formed between the center electrode and the ground electrode. Moreover, in the spark plug, the following dimensional relationships are satisfied: b≧−67.8×(a/D)+27.4; b≦−123.7×(a/D)+64.5; −0.4≦(a/D)≦0.4; and 0°≦b≦90°. Further, with an oblique angle θ being in the range of 0 to 30°, the following dimensional relationship is also satisfied: 0.8≦r/R≦1. Consequently, the spark plug can secure, with a simple configuration, a stable ignition capability regardless of the mounting posture of the spark plug to the engine. | 11-26-2015 |