Patent application number | Description | Published |
20080236787 | METHOD TO COOL BAKE PLATES IN A TRACK LITHOGRAPHY TOOL - A method of reducing a temperature of a bake plate within a semiconductor processing tool includes (a) providing a substrate and (b) transferring the substrate to a position adjacent the bake plate. The bake plate is characterized by an initial bake plate temperature greater than a set point temperature. The method also includes (c) reducing the temperature of the bake plate by a first predetermined amount and (d) transferring the substrate from the position adjacent the bake plate to a position adjacent a chill plate. The chill plate is characterized by a chill plate temperature less than the set point temperature. The method further includes (e) transferring the substrate from the position adjacent the chill plate to the position adjacent the bake plate, (f) reducing the temperature of the bake plate by a second predetermined amount, (g) monitoring the temperature of the bake plate, and (h) repeating steps (d) through (g) until the bake plate temperature is within a predetermined tolerance of the set point temperature. | 10-02-2008 |
20100258049 | HVPE CHAMBER HARDWARE - Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls. | 10-14-2010 |
20100258052 | HVPE PRECURSOR SOURCE HARDWARE - Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls. | 10-14-2010 |
20100261340 | CLUSTER TOOL FOR LEDS - The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process. | 10-14-2010 |
20110253044 | SHOWERHEAD ASSEMBLY WITH METROLOGY PORT PURGE - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus is a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes metrology ports with purge gas assemblies configured and positioned to deliver a purge gas to prevent deposition thereon. In one embodiment, the metrology port is configured to receive a temperature measurement device, and the purge gas assembly is a concentric tube configuration configured to prevent deposition on components of the temperature measurement device. In one embodiment, the metrology port has a sensor window and is configured to receive an optical measurement device, and the purge gas assembly and sensor window are configured to prevent deposition on the sensor window. | 10-20-2011 |
20110256315 | SHOWERHEAD ASSEMBLY WITH GAS INJECTION DISTRIBUTION DEVICES - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber. | 10-20-2011 |
20110256645 | MULTIPLE PRECURSOR SHOWERHEAD WITH BY-PASS PORTS - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels. | 10-20-2011 |
20110256692 | MULTIPLE PRECURSOR CONCENTRIC DELIVERY SHOWERHEAD - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus provides a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a heat exchanging channel through which the plurality of concentric tube assemblies is disposed. | 10-20-2011 |
20110308551 | METHOD AND APPARATUS FOR INDUCING TURBULENT FLOW OF A PROCESSING CHAMBER CLEANING GAS - Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber. | 12-22-2011 |
20120012049 | HVPE CHAMBER - Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have one or more precursor sources coupled thereto. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the precursors and at a lower temperature. The chamber has a truncated box shape formed by a curved cover which improves the flow of the nitrogen and precursor gases and the uniformity of the film deposition. | 01-19-2012 |
20130298835 | MULTIPLE PRECURSOR SHOWERHEAD WITH BY-PASS PORTS - A method and apparatus that includes a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume is provided. The showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. The showerhead may include a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels. | 11-14-2013 |
20140199056 | QUARTZ UPPER AND LOWER DOMES - Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange. | 07-17-2014 |
20140261185 | EPI BASE RING - Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial. | 09-18-2014 |
20140376897 | LIGHT PIPE WINDOW STRUCTURE FOR THERMAL CHAMBER APPLICATIONS AND PROCESSES - A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate disposed within the interior volume of the chamber, and a radiant heat source coupled to a second transparent plate of the light pipe window structure in a position outside of the interior volume of the chamber, wherein the light pipe window structure includes a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate. | 12-25-2014 |