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| 20090033683 | Method, system and apparatus for intelligent resizing of images - A new approach contemplating a variety of improved methods and systems to perform intelligent image resizing on an image is proposed. The approach enables a user to interactively mark or select portions of the image to preserve and/or remove. An energy function can then be used to calculate values of an energy metric, for a non-limiting example, entropy, on every pixel over the entire image. Such calculated values can then be used to determine the optimal regions where new pixels are to be inserted or existing pixels are to be removed in order to minimize the amount of energy lost (for shrinking) or added (for growing) in the image. | 02-05-2009 |
| 20090171766 | SYSTEM AND METHOD FOR PROVIDING ADVERTISEMENT OPTIMIZATION SERVICES - Systems and methods for providing advertisement optimization services are disclosed. In one aspect, embodiments of the present disclosure include a method, which may be implemented on a system, of analyzing a first set of images hosted by the web-publisher for display on the website. One embodiment can include, analyzing metadata associated with a set of advertisements available to the web-publisher for placement on the website, and identifying an advertisement suitable for placement on a webpage of the website for a fee. | 07-02-2009 |
| 20090172030 | SYSTEM AND METHOD FOR IMAGE CLASSIFICATION - Systems and methods for image classification are disclosed. In one aspect, embodiments of the present disclosure include a method, which may be implemented on a system, of selecting a predetermined number of training images that are representative of images associable with a particular topic category. One embodiment can include, extracting training image features from the training images, generating a set of descriptors characteristic of images associable with the particular topic category, and generating the particular set of predetermined models that correspond to the particular topic category based on the set of descriptors. | 07-02-2009 |
| 20090172730 | SYSTEM AND METHOD FOR ADVERTISEMENT DELIVERY OPTIMIZATION - Systems and methods for advertisement delivery optimization are disclosed. In one aspect, embodiments of the present disclosure include a method, which may be implemented on a system, of identifying multimedia content associated with a web-user. One embodiment can include, analyzing the multimedia content to retrieve a set of descriptors, comparing the set of descriptors with metadata of a plurality of advertisements, selecting a candidate pool of advertisements from the plurality of advertisements based on relevancy indicated by the comparison, and presenting at least a portion of the candidate pool of advertisements to the web-user. | 07-02-2009 |
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| 20100308463 | INTERFACIAL CAPPING LAYERS FOR INTERCONNECTS - Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH | 12-09-2010 |
| 20100317178 | REMOTE PLASMA PROCESSING OF INTERFACE SURFACES - Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal. | 12-16-2010 |
| 20100317198 | REMOTE PLASMA PROCESSING OF INTERFACE SURFACES - Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, and a remote plasma source configured to provide a remote plasma to the load lock. | 12-16-2010 |
| 20110120377 | REMOTE PLASMA PROCESSING OF INTERFACE SURFACES - Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal. | 05-26-2011 |
| 20110135557 | HARDMASK MATERIALS - Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of Si | 06-09-2011 |
| 20110236594 | In-Situ Deposition of Film Stacks - Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase. | 09-29-2011 |
| 20110236600 | Smooth Silicon-Containing Films - Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate. | 09-29-2011 |
| 20110244694 | DEPOSITING CONFORMAL BORON NITRIDE FILMS - A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride. | 10-06-2011 |
| 20120276752 | HARDMASK MATERIALS - Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of Si | 11-01-2012 |
| 20130008378 | DEPOSITING CONFORMAL BORON NITRIDE FILMS - A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride. | 01-10-2013 |
| 20130157466 | SILICON NITRIDE FILMS FOR SEMICONDUCTOR DEVICE APPLICATIONS - The embodiments herein relate to plasma-enhanced chemical vapor deposition methods and apparatus for depositing silicon nitride on a substrate. The disclosed methods provide silicon nitride films having wet etch rates (e.g., in dilute hydrofluoric acid or hot phosphoric acid) suitable for certain applications such as vertical memory devices. Further, the methods provide silicon nitride films having defined levels of internal stress suitable for the applications in question. These silicon nitride film characteristics can be set or tuned by controlling, for example, the composition and flow rates of the precursors, as well as the RF power supplied to the plasma and the pressure in the reactor. In certain embodiments, a boron-containing precursor is added. | 06-20-2013 |
| 20130171834 | IN-SITU DEPOSITION OF FILM STACKS - Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators. | 07-04-2013 |
| 20130330932 | HARDMASK MATERIALS - Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of Si | 12-12-2013 |
| 20140175617 | OXYGEN-CONTAINING CERAMIC HARD MASKS AND ASSOCIATED WET-CLEANS - A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. Corresponding films and apparatus are also provided. | 06-26-2014 |
| 20140256128 | METHOD AND APPARATUS FOR REMOTE PLASMA TREATMENT FOR REDUCING METAL OXIDES ON A METAL SEED LAYER - Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate can be reduced to pure metal and the metal reflowed. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, form a remote plasma of a reducing gas species where the remote plasma includes radicals, ions, and/or ultraviolet (UV) radiation from the reducing gas species, and expose a metal seed layer of the substrate to the remote plasma to reduce oxide of the metal seed layer to metal and to reflow the metal. | 09-11-2014 |
| 20150013607 | IN-SITU DEPOSITION OF FILM STACKS - An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase. | 01-15-2015 |
| 20150376792 | ATMOSPHERIC PLASMA APPARATUS FOR SEMICONDUCTOR PROCESSING - Method and apparatus for treating a substrate prior to deposition using atmospheric plasma are disclosed. A substrate can be provided between a substrate support and a plasma distributor, where the plasma distributor includes one or more atmospheric plasma sources. The atmospheric plasma sources can generate plasma under atmospheric pressure, where the plasma can include radicals and ions of a process gas, such as a reducing gas species. The substrate can be exposed to the plasma under atmospheric pressure to treat the surface of the substrate, where atmospheric pressure can be between about 50 Torr and about 760 Torr. In some embodiments, substrate includes a metal seed layer having portions converted to oxide of a metal, where exposure to the plasma reduces the oxide of the metal and reflows the metal in the metal seed layer. | 12-31-2015 |
| 20150380296 | CLEANING OF CARBON-BASED CONTAMINANTS IN METAL INTERCONNECTS FOR INTERCONNECT CAPPING APPLICATIONS - Protective caps residing at an interface between copper lines and dielectric diffusion barrier layers are used to improve various performance characteristics of interconnects. The caps, such as cobalt-containing caps or manganese-containing caps, are selectively deposited onto exposed copper lines in a presence of exposed dielectric using CVD or ALD methods. The deposition of the capping material is affected by the presence of carbon-containing contaminants on the surface of copper, which may lead to poor or uneven growth of the capping layer. A method of removing carbon-containing contaminants from the copper surface prior to deposition of caps involves contacting the substrate containing the exposed copper surface with a silylating agent at a first temperature to form a layer of reacted silylating agent on the copper surface, followed by heating the substrate at a higher temperature to release the reacted silylating agent from the copper surface. | 12-31-2015 |
| 20160042943 | LOW-K DIELECTRIC FILM FORMATION - Methods and apparatus for fabricating a porous, low-k dielectric film are described. In some implementations, the methods include exposing a precursor film including a porogen within a matrix to a plasma generated from a weak oxidizer. The plasma may also include reducing agent species. In some implementations, the plasma is a downstream plasma. Implementations of the method involve selectively removing regions of isolated, organic porogen co-existing within a silicon-organic matrix by exposure to the plasma while preserving the organic groups bonded to the backbone of the silicon matrix. The methods also result in low damage to the dielectric film. In some implementations, plasma exposure is followed by exposure to ultraviolet (UV) radiation. | 02-11-2016 |
| 20160056071 | FLOWABLE DIELECTRIC FOR SELECTIVE ULTRA LOW-K PORE SEALING - Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface. | 02-25-2016 |
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| 20090312045 | DYNAMIC GROUP PRIORITIZATION IN COMMUNICATION NETWORKS - An apparatus and method for dynamic group prioritization in a communication network includes a first step ( | 12-17-2009 |
| 20110065415 | FACILITATING INTEROPERABILITY AMONG COMMUNICATION SYSTEMS VIA INTER- AND INTRA-AGENCY COMMUNICATIONS USING A SHARED NETWORK - Providing contact information via a directory service comprises a request being received from an originator to obtain at least a portion of contact information associated with a target. A first policy associated with the originator is identified, and a second policy that is associated with the target is identified. Based on at least one of the policies, it is determined whether a portion of the contact information associated with the target is authorized to be presented to the originator. If authorized, the portion of the contact information is presented to the originator. Upon receiving a request from the originator to establish communication with the target, it is determined whether a portion of contact information associated with the originator is authorized to presented to the target based on at least one of the policies. If authorized, the portion of the contact information associated with the originator is presented to the target. | 03-17-2011 |
| 20110150219 | SYSTEM AND METHOD OF INCREASING ENCRYPTION SYNCHRONIZATION AVAILABILITY - Methods for increasing encryption synchronization availability include collecting encryption synchronization data from a first superframe received at a gateway. The encryption synchronization data is for decrypting media in a second superframe also received at the gateway. The encryption synchronization data from the first superframe is used to form a composite encryption synchronization codeword for decrypting media in a third superframe formed by the gateway, wherein the third superframe includes the composite encryption synchronization codeword and at least a portion of the media from the second superframe. The third superframe is sent to a receiving device so that media in the third superframe can be decrypted by the receiving device using the composite encryption synchronization codeword that is included in the same superframe as the media that is being decrypted. | 06-23-2011 |
| 20120149421 | METHOD AND SYSTEM OF PROVIDING SERVICE TO A MOBILE DEVICE IN A COMMUNICATION NETWORK - A mobile device registers with an infrastructure device coupled to a first communication network and then sends a request to activate PTT service in the first communication network. A communication server is adapted to receive the request to activate the PTT service, and to, thereby, activate the PTT service for the mobile device in the first communication network. Responsive to receiving the request to activate the PTT service, the communication server makes a determination to register the mobile device with a second communication network, generates a service registration message, on behalf of the mobile device, to register the mobile device with the second communication network, and sends the service registration message to the second communication network. | 06-14-2012 |
| 20120170502 | METHODS FOR BINDING AND UNBINDING A MBMS BEARER TO A COMMUNICATION GROUP IN A 3GPP COMPLIANT SYSTEM - A 3GPP compliant system includes a radio access network (RAN) partitioned into a plurality MBMS services areas, wherein each MBMS service area has a plurality of MBMS bearers established a priori for transporting media streams. An infrastructure device: receives a request to transmit a media stream to a communication group, wherein the request to transmit is received after the MBMS bearers were established; determines a MBMS bearer in a MBMS service area to assign to transport the media stream; generates a MBMS connect message that binds the communication group to the assigned MBMS bearer, wherein the MBMS connect message includes an identifier for the communication group and an identifier for the assigned MBMS bearer; and sends the MBMS connect message to members of the communication group. | 07-05-2012 |
| 20120170571 | SYSTEM AND METHOD FOR DYNAMIC TEMPLATE UPDATING FOR COMPRESSED MESSAGES - A method for updating a message template based on receiving a plurality of common deltas. At a first device, the method detects a first compressed message that includes a first delta and that references a first message template and stores an indication of having received the first delta. The first delta is combinable with the first message template to reconstruct a decompressed message. The first device receives at least one subsequent compressed message that includes the first delta and that references the first message template, and stores an indication of each subsequent time the first delta is received. Based on the stored indications, the first device determines that the first delta was received in accordance with at least one predetermined threshold factor, and in response thereto, initiating a procedure to generate a superseding message template, which updates the first message template by including the first delta. | 07-05-2012 |
| 20130279375 | METHOD AND APPARATUS FOR ENABLING INTEROPERABILITY BETWEEN A BROADBAND NETWORK AND A NARROWBAND NETWORK - A method and apparatus for enabling interoperability between a broadband network and a narrowband network includes an interworking server maintaining at least one virtual narrowband site, each comprising a plurality of virtual narrowband channels known by a controlling server within the narrowband network, wherein each virtual narrowband channel, when assigned by the controlling server, represents a corresponding set of broadband resources. A first broadband device coupled to the broadband network is associated with a first virtual narrowband site. The interworking server further exchanges signaling with the controlling server to enable communications by the first broadband device using a set of broadband resources corresponding to a first virtual narrowband channel of the first virtual narrowband site, wherein the first virtual narrowband channel is assigned by the controlling server for use by a virtual narrowband device which represents the first broadband device. | 10-24-2013 |
| 20150131510 | APPARATUS AND METHOD FOR DYNAMICALLY SELECTING UNICAST OR BROADCAST RESOURCES FOR A PUSH-TO-TALK CALL - A controller receives a new resource request from a user equipment associated with a first talk group. The new resource request is a request for an assignment of one of MBMS resources and unicast resources for user equipment associated with the first talk group. The controller identifies a second geographical area in which members of the first talk group are located, determines that MBMS resources are available in the second geographical area, and determines whether the first talk group is an MBMS eligible talk group in the second geographical area. In response to determining that the first talk group is an MBMS eligible talk group in the second geographical area, the controller assigns MBMS resources to the first talk group; otherwise, the controller assigns unicast resources to the first talk group. | 05-14-2015 |
