| Patent application number | Description | Published |
|---|
| 20120000528 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 01-05-2012 |
| 20120073650 | METHOD OF FABRICATING AN EMITTER REGION OF A SOLAR CELL - Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described. | 03-29-2012 |
| 20120204926 | PROCESS AND STRUCTURES FOR FABRICATION OF SOLAR CELLS - Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses. | 08-16-2012 |
| 20130078758 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 03-28-2013 |
| 20140096824 | PROCESS AND STRUCTURES FOR FABRICATION OF SOLAR CELLS - Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses. | 04-10-2014 |
| 20140134788 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Method of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 05-15-2014 |
| 20140166093 | SOLAR CELL EMITTER REGION FABRICATION USING N-TYPE DOPED SILICON NANO-PARTICLES - Methods of fabricating solar cell emitter regions using N-type doped silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. At least a portion of the P-type dopant-containing layer is mixed with at least a portion of each of the plurality of regions of N-type doped silicon nano-particles. | 06-19-2014 |
| 20140170800 | SOLAR CELL EMITTER REGION FABRICATION USING SILICON NANO-PARTICLES - Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer. | 06-19-2014 |
| 20140295609 | SOLAR CELL EMITTER REGION FABRICATION USING SILICON NANO-PARTICLES - Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer. | 10-02-2014 |
