Anikitchev
Sergeui Anikitchev, Belmont, CA US
Patent application number | Description | Published |
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20150029497 | SYSTEMS AND METHODS FOR MEASURING HIGH-INTENSITY LIGHT BEAMS - Systems and methods for measuring an intensity characteristic of a light beam are disclosed. The methods include directing the light beam into a prism assembly that includes a thin prism sandwiched by two transparent plates, and reflecting a portion of the light beam by total-internal-reflection surface to an integrating sphere while transmitting the remaining portion of the light beam through the two transparent plates to a beam dump. The method also includes detecting light captured by the integrating sphere and determining the intensity characteristic from the detected light. | 01-29-2015 |
Serguei Anikitchev, Hayward, CA US
Patent application number | Description | Published |
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20150179449 | Laser spike annealing using fiber lasers - The disclosure is directed to laser spike annealing using fiber lasers. The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length L | 06-25-2015 |
Serguei G. Anikitchev, Belmont, CA US
Patent application number | Description | Published |
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20100084744 | Thermal processing of substrates with pre- and post-spike temperature control - Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods. | 04-08-2010 |
20110298093 | Thermal Processing of Substrates with Pre- and Post-Spike Temperature Control - Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods. | 12-08-2011 |
20120111838 | Thermal Processing of Substrates with Pre- and Post-Spike Temperature Contro - Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods. | 05-10-2012 |