Patent application number | Description | Published |
20080268615 | Treatment of a Germanium Layer Bonded with a Substrate - The invention relates to a treatment method of a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded with the substrate, the method comprising a treatment to improve the electrical properties of the layer and/or the interface of the Ge layer with the underlying layer, characterised in that said treatment is a heat treatment applied at a temperature between 500° C. and 600° C. for not more than 3 hours. | 10-30-2008 |
20100052104 | METHOD FOR FABRICATING A LOCALLY PASSIVATED GERMANIUM-ON-INSULATOR SUBSTRATE - The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention. | 03-04-2010 |
20100148322 | COMPOSITE SUBSTRATE AND METHOD OF FABRICATING THE SAME - The invention specifically relates to methods of fabricating a composite substrate by providing a first insulating layer on a support substrate at a thickness of e | 06-17-2010 |
20100187649 | CHARGE RESERVOIR STRUCTURE - The present invention relates to a process for preparing semiconductor on insulator type structures that include a semiconductor layer of a donor substrate, an insulator layer and a receiver substrate. The process includes bonding of the donor substrate onto the receiver substrate, with at least one of the substrates being coated with an insulator layer, and forming at the bonding interface a so-called trapping interface of electrically active traps suitable for retaining charge carriers. The invention also relates to a semiconductor on insulator type structure that includes such a trapping interface. | 07-29-2010 |
20100188094 | METHOD AND APPARATUS FOR MEASURING A LIFETIME OF CHARGE CARRIERS - An apparatus for measuring a lifetime of charge carriers that has a measuring probe and a component for directing ultraviolet radiation to a measuring position. The measuring probe also includes at least one electrode provided at a predetermined spatial relationship to the measuring position. A microwave source is adapted to direct microwave radiation to the measuring position, a microwave detector is adapted to measure an alteration of an intensity of microwave radiation reflected at the measuring position in response to the ultraviolet radiation and a semiconductor structure holder is adapted to receive a semiconductor structure and to provide an electric contact to a portion of the semiconductor structure. Additionally, a device for moving the substrate holder relative to the measuring probe is provided for positioning at least one portion of the semiconductor structure at the measuring position. The apparatus includes a power source adapted to apply a bias voltage between the semiconductor structure holder and the electrode. | 07-29-2010 |
20100323496 | PROCESS FOR MANUFACTURING A COMPOSITE SUBSTRATE - The invention relates to a process for manufacturing a composite substrate comprising bonding a first substrate ( | 12-23-2010 |
20110012200 | SUBSTRATE HAVING A CHARGED ZONE IN AN INSULATING BURIED LAYER - Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 10 | 01-20-2011 |
20130134547 | METHOD FOR FABRICATING A LOCALLY PASSIVATED GERMANIUM-ON-INSULATOR SUBSTRATE - The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention. | 05-30-2013 |
20140015023 | SUBSTRATE HAVING A CHARGED ZONE IN AN INSULATING BURIED LAYER - Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 10 | 01-16-2014 |
20140084290 | MANUFACTURING METHOD FOR A SEMICONDUCTOR ON INSULATOR TYPE SUBSTRATE FOR RADIOFREQUENCY APPLICATIONS - The invention relates to a method for manufacturing a semiconductor on insulator type substrate for radiofrequency applications, comprising the following steps in sequence: (a) provision of a silicon substrate ( | 03-27-2014 |