Patent application number | Description | Published |
20080197439 | Semiconductor Device And Method For Manufacturing Same - A semiconductor device including a Schottky diode of the trench-junction-barrier type having an integrated PN diode, and a corresponding method for manufacturing the device, are provided. An n layer is provided on an n | 08-21-2008 |
20090032897 | Semiconductor Device and Method for Its Manufacture - In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special manufacturing methods, are arranged in their physical properties such that they are suitable for use in a rectifier for a motor vehicle generator, and are also able to be operated as Z diodes. | 02-05-2009 |
20090206438 | Semiconductor component - A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current. | 08-20-2009 |
20100237456 | SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE - A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos. | 09-23-2010 |
20100244559 | RECTIFIER CIRCUIT - Rectifier circuits which are usable, instead of diodes, for rectifying alternating voltages, and which, like diodes, form two-terminal networks having a cathode terminal and an anode terminal. The power loss of these rectifier circuits is clearly less that the power loss of silicon p-n diodes. These rectifier circuits also include voltage clamping functions. | 09-30-2010 |
20100259137 | GENERATOR INCLUDING A RECTIFIER SYSTEM - A generator, for example a three-phase generator including an associated rectifier system, is used, for example for the electrical voltage supply of a motor vehicle. The AC voltage produced by the generator is rectified by the rectifier system having a plurality of rectifying elements | 10-14-2010 |
20100301387 | SEMICONDUCTOR DEVICE AND METHOD FOR ITS PRODUCTION - A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon substrate, and having a p-doped SiGe layer, which is contiguous to a second n-doped silicon epitaxial layer and forms a heterojunction diode, which is situated above the first n-doped silicon epitaxial layer and in which the pn-junction is situated within the p-doped SiGe layer. The first n-silicon epitaxial layer has a higher doping concentration than the second n-silicon epitaxial layer. Situated between the two n-doped epitaxial layers is at least one p-doped emitter trough, which forms a buried emitter, a pn-junction both to the first n-doped silicon epitaxial layer and also to the second n-doped silicon epitaxial layer being formed, and the at least one emitter trough being completely enclosed by the two epitaxial layers. | 12-02-2010 |
20110095399 | Method For Manufacturing Semiconductor Chips From A Wafer - A method is for manufacturing semiconductor chips from a wafer which includes a plurality of semiconductor chips. Defects in the crystal structure of the chips may be substantially reduced by producing rupture joints in the surface of the wafer after the wafer has been produced, and by breaking the wafer along the rupture joints to separate the semiconductor chips. | 04-28-2011 |
20110212602 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes a trench MOS barrier Schottky diode having an integrated PN diode and a method is for manufacturing same. | 09-01-2011 |
20120181652 | SEMICONDUCTOR SYSTEM AND METHOD FOR MANUFACTURING SAME - A semiconductor system having a trench MOS barrier Schottky diode is described, including an n-type epitaxial layer, in which at least two etched trenches are located in a two-dimensional manner of presentation on an n | 07-19-2012 |
20120187498 | Field-Effect Transistor with Integrated TJBS Diode - A semiconductor component includes at least one MOS field-effect transistor and a trench junction barrier Schottky diode (TJBS) configured as a monolithically integrated structure. The breakdown voltages of the MOS field-effect transistor and of the trench junction barrier Schottky diode (TJBS) are selected such that the MOS field-effect transistor can be operated in breakdown mode. | 07-26-2012 |
20120187521 | SCHOTTKY DIODE HAVING A SUBSTRATE P-N DIODE - A semiconductor device has a trench junction barrier Schottky diode that includes an integrated substrate p-n diode (TJBS-Sub-PN) as a clamping element, the trench junction barrier Schottky diode being suited, e.g., as a Zener diode having a breakdown voltage of approximately 20 V, for use in motor-vehicle generator systems. In this context, the TJBS-Sub-PN is made up of a combination of a Schottky diode, an epitaxial p-n diode and a substrate p-n diode, and the breakdown voltage of the substrate p-n diode (BV_pn) is less than the breakdown voltage of the Schottky diode (BV_schottky) and the breakdown voltage of the epitaxial p-n diode (BV_epi). | 07-26-2012 |
20120188810 | RECTIFIER SYSTEM - A rectifier system, e.g., for a generator, includes a bridge system having a predefined number of rectifier elements, at least one rectifier element being a rectifier element having at least one reverse-voltage dependent characteristic curve in a predefined range, and one of the negative diodes having a higher reverse saturation current than the associated positive diode, and at least one of the negative diodes being placed at a location in the rectifier in which the temperature is increased. | 07-26-2012 |
20120241897 | SEMICONDUCTOR SYSTEM INCLUDING A SCHOTTKY DIODE - A semiconductor system is described, which includes a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element, which is suitable for use in motor vehicle generator system, in particular as a Zener diode having a breakdown voltage of approximately 20V. In this case, the TJBS is a combination of a Schottky diode and a p-n type diode. Where the breakdown voltages are concerned, the breakdown voltage of the p-n type diode is lower than the breakdown voltage of Schottky diode. The semiconductor system may therefore be operated using high currents at breakdown. | 09-27-2012 |
20120256196 | SCHOTTKY DIODE - A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation. | 10-11-2012 |
20120280353 | PROTECTIVE ELEMENT FOR ELECTRONIC CIRCUITS - A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode. | 11-08-2012 |
20130161779 | SUPER TRENCH SCHOTTKY BARRIER SCHOTTKY DIODE - A Schottky diode includes an n | 06-27-2013 |
20130207222 | SUPER-JUNCTION SCHOTTKY OXIDE PIN DIODE HAVING THIN P-TYPE LAYERS UNDER THE SCHOTTKY CONTACT - A semiconductor chip, which includes an n-type substrate, over which an n-type epitaxial layer having trenches introduced into the epitaxial layer and filled with p-type semiconductor is situated, the trenches each having a heavily doped p-type region on their upper side, the n | 08-15-2013 |
20130207525 | RECTIFIER ARRANGEMENT HAVING SCHOTTKY DIODES - A rectifier system having press-in diodes that contain a Schottky diode as semiconductor element. The Schottky diodes are operated in an operating range in which the diode losses increase as the temperature increases. | 08-15-2013 |
20130329476 | GENERATOR DEVICE FOR THE VOLTAGE SUPPLY OF A MOTOR VEHICLE - A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode. | 12-12-2013 |
20130341764 | METHOD FOR MANUFACTURING A DIODE, AND A DIODE - In a method for manufacturing a diode, a semiconductor crystal wafer is used to produce a p-n or n-p junction, which extends in planar fashion across the top side of a semiconductor crystal wafer. Separation edges form perpendicularly to the top side of the semiconductor crystal wafer, which edges extend across the p-n or n-p junction. The separation of the semiconductor crystal wafer is achieved in that, starting from a disturbance, a fissure is propagated by local heating and local cooling of the semiconductor crystal wafer. The separation fissure thus formed extends along crystal planes of the semiconductor crystal, which avoids the formation of defects in the area of the p-n or n-p junction. | 12-26-2013 |
20140001593 | Semiconductor Arrangement Having a Schottky Diode | 01-02-2014 |
20140001927 | RECTIFIERARRANGEMENT HAVING SCHOTTKY DIODES | 01-02-2014 |
20140021509 | SEMICONDUCTOR CONFIGURATION HAVING REDUCED ON-STATE RESISTANCE - A semiconductor configuration, which includes an epitaxial layer of the first conductivity type disposed on a highly doped substrate of first conductivity type; a layer of a second conductivity type introduced into the epitaxial layer; and a highly doped layer of the second conductivity type provided at the surface of the layer of the second conductivity type. Between the layer of the second conductivity type and the highly doped substrate of the first conductivity type, a plurality of Schottky contacts, which are in the floating state, are provided mutually in parallel in the area of the epitaxial layer. | 01-23-2014 |
20140035090 | TRENCH SCHOTTKY DIODE - A trench Schottky diode is described, which has a highly doped substrate of a first conductivity type and an epitaxial layer of the same conductivity type that is applied to the substrate. At least two trenches are introduced into the epitaxial layer. The epitaxial layer is a stepped epitaxial layer that has two partial layers of different doping concentrations. | 02-06-2014 |
20140239435 | SUPER-JUNCTION SCHOTTKY PIN DIODE - A semiconductor chip has an n | 08-28-2014 |
20150028445 | HIGH-VOLTAGE TRENCH JUNCTION BARRIER SCHOTTKY DIODE - In a Schottky diode having an n | 01-29-2015 |
20150041830 | SCHOTTKY DIODE - A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation. | 02-12-2015 |