Patent application number | Description | Published |
20100272213 | RADIOFREQUENCY TRANSMISSION SYSTEM - The invention relates to a radiofrequency transmission system comprising: means of producing at least one digital signal quantised on N bits; for each of said at least one digital signal, digital processing means including: Sigma-delta filters capable of producing, on the basis of a digital input signal quantised on N bits, a digital output signal quantised on M bits, where M is less than N; downstream from sigma-delta filters, means of repetition over-sampling; and downstream from over-sampling means, convolution means; digital-to-analogue conversion means capable of converting a digital output signal into an analogue signal; and analogue filtering means capable of filtering said analogue signal so as to select a narrow frequency band which includes the second frequency. | 10-28-2010 |
20100272214 | RADIOFREQUENCY TRANSMISSION SYSTEM - The invention relates to a radiofrequency transmission system comprising: means of producing a complex digital signal quantised on N bits; means of transforming the complex digital signal into two complex digital signals with an identical and constant envelope that are phase-shifted with respect to one another; a digital processing pathway associated with each of the two complex digital signals with a constant envelope and comprising at least some filtering means of the sigma-delta type for quantising on M bits signals travelling in the processing pathway, M being less than N; digital-to-analogue conversion means for converting the outputs of the digital processing pathways into analogue signals; means of selectively filtering (of the bandpass type) the analogue signals in a predetermined transmission frequency band; means of amplifying the filtered analogue signals; and means of recombining the amplified analogue signals. | 10-28-2010 |
20100301968 | POWER AMPLIFIER FILTER FOR RADIO-FREQUENCY SIGNALS - A power amplifier filter for radio-frequency signals having an outphasing type architecture comprising a first stage ( | 12-02-2010 |
20110204995 | ACOUSTICALLY COUPLED RESONATOR FILTER WITH IMPEDANCE TRANSFORMATION RATIO CONTROLLED BY RESONANT FREQUENCY DIFFERENCE BETWEEN TWO COUPLED RESONATORS - A signal processing device includes a first acoustic resonator, a second acoustic resonator disposed on the first acoustic resonator, and a coupling layer between the first and the second acoustic resonators. The first acoustic resonator has a first electrical impedance and a first resonance frequency and includes a first set of electrodes, and a first piezoelectric layer having a first thickness, disposed between the first set of electrodes. The second acoustic resonator has a second electrical impedance and a second resonance frequency, and includes a second set of electrodes, and a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes. The first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device. The first and second resonance frequencies are substantially different from each other. | 08-25-2011 |
20120218055 | STACKED ACOUSTIC RESONATOR COMPRISING A BRIDGE - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode. | 08-30-2012 |
20120218057 | FILM BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE - A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer. | 08-30-2012 |
20120218058 | COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode. | 08-30-2012 |
20120218059 | STACKED BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE AND AN ACOUSTIC REFLECTOR ALONG A PERIMETER OF THE RESONATOR - In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode. | 08-30-2012 |
20120218060 | BULK ACOUSTIC WAVE RESONATOR COMPRISING BRIDGE FORMED WITHIN PIEZOELECTRIC LAYER - A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer. | 08-30-2012 |
20120280767 | DOUBLE FILM BULK ACOUSTIC RESONATORS WITH ELECTRODE LAYER AND PIEZO-ELECTRIC LAYER THICKNESSES PROVIDING IMPROVED QUALITY FACTOR - A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other. | 11-08-2012 |
20120293278 | STACKED BULK ACOUSTIC RESONATOR COMPRISING DISTRIBUTED BRAGG REFLECTOR - A device comprises a substrate, an acoustic stack, and a distributed Bragg reflector. The acoustic stack comprises a first electrode formed on the substrate, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer, a second piezoelectric layer formed on the second electrode, and a third electrode formed on the second piezoelectric layer. The distributed Bragg reflector is formed adjacent to the acoustic stack and provides it with acoustic isolation. | 11-22-2012 |
20120319530 | BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER - In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer. | 12-20-2012 |
20120319534 | BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER AND BRIDGE - A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode. | 12-20-2012 |
20130106248 | BULK ACOUSTIC RESONATOR COMPRISING PIEZOELECTRIC LAYER AND INVERSE PIEZOELECTRIC LAYER | 05-02-2013 |
20130106534 | PLANARIZED ELECTRODE FOR IMPROVED PERFORMANCE IN BULK ACOUSTIC RESONATORS | 05-02-2013 |
20130176086 | DOUBLE BULK ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE - A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum. | 07-11-2013 |
20140118087 | ACOUSTIC RESONATOR COMPRISING COLLAR AND FRAME - An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, a frame disposed within a main membrane region defined by an overlap between the first electrode, the piezoelectric layer, and the second electrode, and having an outer edge substantially aligned with a boundary of the main membrane region, and a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region. | 05-01-2014 |
20140118091 | ACOUSTIC RESONATOR HAVING COLLAR STRUCTURE - A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer. | 05-01-2014 |