| Patent application number | Description | Published |
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| 20100171567 | INTEGRATED MILLIMETER WAVE PHASE SHIFTER AND METHOD - A phase shifter and method include a hybrid coupler being ground shielded. The hybrid coupler with reflective terminations connected to the hybrid coupler is configured to phase shift an applied signal wherein the reflective terminations include a parallel LC circuit. | 07-08-2010 |
| 20110063169 | PHASED-ARRAY TRANSCEIVER FOR MILLIMETER-WAVE FREQUENCIES - A phased-array transmitter and receiver that may be effectively implemented on a silicon substrate. The transmitter distributes to front-ends, and the receiver combines signals from front-ends, using a power distribution/combination tree that employs both passive and active elements. By monitoring the power inputs and outputs, a digital control is able to rapidly provide phase and gain correction information to the front-ends. Such a transmitter/receiver includes a plurality of radio frequency (RF) front-ends and a power splitting/combining network that includes active and passive components configured to distribute signals to/from the front-ends. | 03-17-2011 |
| 20110254727 | PHASED ARRAY MILLIMETER WAVE IMAGING TECHNIQUES - An apparatus, imager elements, and a method for detecting a radio frequency image using phased array techniques. An example apparatus includes an array of radio frequency antennas fabricated on one or more packaged integrated circuits. The apparatus also includes a controller configured to selectively phase shift radio frequency signals from the antennas such that the at least a portion of the radio frequency image is focused. | 10-20-2011 |
| 20120206299 | MILLIMETER-WAVE COMMUNICATIONS USING A REFLECTOR - Methods and systems for establishing a non-line of sight millimeter wave connection that include a transmitter unit having beam-steering capability, a receiver unit having beam-steering capability, and a reflecting unit in a position having a line-of-sight path to the transmitter unit and the receiver unit. The reflecting unit includes an attachment mechanism configured to attach to a mounting point on an object or surface, a reflecting surface that is reflective to millimeter-wave radiation, and an adjustable pivot connected between the attachment mechanism and the reflecting surface configured to permit directional positioning of the reflecting surface relative to the attachment mechanism. | 08-16-2012 |
| 20120299632 | SIMULTANEOUS SIGNAL INPUT MATCHING AND LINEARIZATION - An amplifier, mixer, and method for input impedance matching and linearization. The transconductor includes a first differential transistor and a second differential transistor, including a first differential source and a second differential source electrically connected at a source node. The transconductor includes a pair of transmission lines including a first line of the pair of transmission lines electrically connected to the first of the two differential voltage inputs and a second line of the pair of transmission lines electrically connected to the second of the two differential voltage inputs. The pair of transmission lines is electrically connecting the two differential voltage inputs at a common node. The transconductor also includes a linearization unit including one or more linearization transistors. The one or more linearization transistors include a linearization gate electrically connected to the common node. The linearization unit is configured to supply a virtual ground at the source node. | 11-29-2012 |
| 20130015375 | GENERATION OF TERAHERTZ ELECTROMAGNETIC WAVES IN GRAPHENE BY COHERENT PHOTON-MIXINGAANM AVOURIS; PHAEDONAACI Yorktown HeightsAAST NYAACO USAAGP AVOURIS; PHAEDON Yorktown Heights NY USAANM Sung; Chun-YungAACI PoughkeepsieAAST NYAACO USAAGP Sung; Chun-Yung Poughkeepsie NY USAANM Valdes Garcia; AlbertoAACI HartsdaleAAST NYAACO USAAGP Valdes Garcia; Alberto Hartsdale NY USAANM Xia; FengnianAACI PlainsboroAAST NJAACO USAAGP Xia; Fengnian Plainsboro NJ US - An electromagnetic device and method for fabrication includes a substrate and a layer of graphene formed on the substrate. A metallization layer is patterned on the graphene. The metallization layer forms electrodes such that when the graphene is excited by light, terahertz frequency radiation is generated. | 01-17-2013 |
| 20130069831 | PHASED-ARRAY TRANSCEIVER - Systems, methods, devices and apparatuses directed to transceiver devices are disclosed. In accordance with one method, a first set of antenna positions in a first section of a set of sections of a circuit layout for the circuit package is selected. The method further includes selecting another set of antenna positions in another section of the circuit layout such that an arrangement of selected antenna positions of the other set is different from an arrangement of selected antenna positions of a previously selected set of antenna positions. The selecting another set of positions in another section is iterated until selections have been made for a total number of antennas. The selecting the other set is performed such that consecutive unselected positions in the other section do not exceed a predetermined number of positions. In addition, antenna elements are formed at the selected positions to fabricate the circuit package. | 03-21-2013 |
| 20130082242 | TRANSISTOR DEVICE WITH REDUCED GATE RESISTANCE - A device with reduced gate resistance includes a gate structure having a first conductive portion and a second conductive portion formed in electrical contact with the first conductive portion and extending laterally beyond the first conductive portion. The gate structure is embedded in a dielectric material and has a gate dielectric on the first conductive portion. A channel layer is provided over the first conductive portion. Source and drain electrodes are formed on opposite end portions of a channel region of the channel layer. Methods for forming a device with reduced gate resistance are also provided. | 04-04-2013 |
| 20130082243 | TRANSISTOR DEVICE WITH REDUCED GATE RESISTANCE - A device with reduced gate resistance includes a gate structure having a first conductive portion and a second conductive portion formed in electrical contact with the first conductive portion and extending laterally beyond the first conductive portion. The gate structure is embedded in a dielectric material and has a gate dielectric on the first conductive portion. A channel layer is provided over the first conductive portion. Source and drain electrodes are formed on opposite end portions of a channel region of the channel layer. Methods for forming a device with reduced gate resistance are also provided. | 04-04-2013 |
| 20130113081 | QUANTUM CAPACITANCE GRAPHENE VARACTORS AND FABRICATION METHODS - A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included. | 05-09-2013 |
| 20130194042 | Multi-Stage Amplifier Using Tunable Transmission Lines and Frequency Response Calibration of Same - A multi-stage amplifier is provided that uses tunable transmission lines, as well as a calibration method for the multi-stage amplifiers. A multi-stage amplifier, comprises a plurality of tunable amplification stages, wherein each of the tunable amplification stages comprises a tunable resonator based on a transmission line having a tunable element. The tunable elements may vary a capacitance or an inductance to tune a frequency of an applied signal. A calibration method is provided for a multi-stage amplifier having a plurality of transmission lines, an input stage and an output stage. The multi-stage amplifier is calibrated by generating a signal to determine a frequency for a substantially maximum power; generating an error signal by comparing the frequency for the substantially maximum power with a desired frequency; varying a digital control code applied to each of the tunable transmission lines, input stage and output stage until the error signal satisfies predefined criteria. | 08-01-2013 |
| 20130337618 | TRANSISTOR DEVICE WITH REDUCED GATE RESISTANCE - A device with reduced gate resistance includes a gate structure having a first conductive portion and a second conductive portion formed in electrical contact with the first conductive portion and extending laterally beyond the first conductive portion. The gate structure is embedded in a dielectric material and has a gate dielectric on the first conductive portion. A channel layer is provided over the first conductive portion. Source and drain electrodes are formed on opposite end portions of a channel region of the channel layer. Methods for forming a device with reduced gate resistance are also provided. | 12-19-2013 |
| 20140061450 | ELECTRO-OPTIC MODULATOR - A method for controlling an electro-optic modulator device includes measuring a performance metric of the device to define a first measured performance value, and changing a state of a first tuning portion of the device to connect the first tuning portion to ground. | 03-06-2014 |
| 20140064653 | ELECTRO-OPTIC MODULATOR - An electro-optical modulator device includes an optical signal path partially defined by a waveguide portion, a radio frequency (RF) signal path partially defined by a conductive line portion, an interaction region where an RF signal propagating in the RF signal path interacts with an optical signal propagating in the optical signal path to modulate the optical signal, and a first tuning portion arranged proximate to the conductive line portion, the first tuning portion including a conductive portion and a switch portion operative to connect the conductive portion to ground. | 03-06-2014 |
| 20140132450 | PHASED-ARRAY TRANSCEIVER FOR MILLIMETER-WAVE FREQUENCIES - A phased-array receiver that may be effectively implemented on a silicon substrate. A receiver includes multiple radio frequency (RF) front-ends, each configured to receive a signal with a given delay relative to the others such that the gain of the received signal is highest in a given direction. The receiver also includes a power combination network configured to accept an RF signal from each of the RF front-ends and to pass a combined RF signal to a down-conversion element, where the power distribution network includes a combination of active and passive components. Each RF front-end includes a phase shifter configured to delay the signal in accordance with the given direction and a variable amplifier configured to adjust the gain of the signal. | 05-15-2014 |
| 20140139274 | BIPOLAR TRANSISTOR FREQUENCY DOUBLERS AT MILLIMETER-WAVE FREQUENCIES - Methods for frequency multiplying include receiving a signal having an input frequency at a frequency multiplier comprising a pair of transistors; and selecting a harmonic in the signal by connecting the transistors to a common impedance through a respective collector impedance, wherein an output frequency at the harmonic between the collector impedances and the common impedance is an even integer multiple of an input frequency. | 05-22-2014 |
| 20140140450 | BIPOLAR TRANSISTOR FREQUENCY DOUBLERS AT MILLIMETER-WAVE FREQUENCIES - Frequency multipliers include a pair of transistors each connected to a common impedance through a respective collector impedance formed from a transmission line. Each transmission line has a length between about one quarter and about one eighth of a wavelength of an input signal frequency and is tuned to produce a large impedance at a collector of the respective transistor at the input signal frequency. The output frequency between the collector impedances and the common impedance is an even integer multiple of the input frequency. | 05-22-2014 |
| 20140151641 | 3D RFICS WITH ULTRA-THIN SEMICONDUCTOR MATERIALS - Three-dimensional integrated circuits and method for fabricating the same include forming one or more passive components in a passive-layer dielectric; depositing additional dielectric material on the passive-layer dielectric; forming a gate structure in the additional dielectric material; forming a gate dielectric layer on the gate structure and the additional dielectric material; forming a thin channel material on the gate dielectric; forming source and drain regions in electrical contact with the thin channel material to form a transistor; and passivating the transistor and providing electrical access to the source and drain regions. | 06-05-2014 |
| 20140151642 | 3D RFICS WITH ULTRA-THIN SEMICONDUCTOR MATERIALS - Three-dimensional integrated circuits include an active layer having one or more active components formed with carbon-based channel material; a passive layer monolithically formed with the active layer, having one or more sub-layers and each sub-layer having one or more passive components, where the passive components have monolithically formed vertical interconnects to components on other layers; and a surface layer monolithically formed with the passive layer, including one or more surface components connected to one or more of the passive components through monolithically formed vias. | 06-05-2014 |
| 20140184439 | SCALABLE POLARIMETRIC PHASED ARRAY TRANSCEIVER - A polarimetric transceiver front-end includes two receive paths configured to receive signals from an antenna, each receive path corresponding to a respective polarization. Each front-end includes a variable amplifier and a variable phase shifter; a first transmit path configured to send signals to the antenna, where the transmit path is connected to the variable phase shifter of one of the two receive paths and includes a variable amplifier; and a transmit/receive switch configured to select between the first transmit path and the two receive paths for signals, where the transmit/receive switch includes a quarter-wavelength transmission line that adds a high impedance to the transmit path when the transmit/receive switch is in a receiving state. | 07-03-2014 |
| 20140254981 | GRAPHENE PLASMONIC COMMUNICATION LINK - A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers. | 09-11-2014 |
| 20140255044 | GRAPHENE PLASMONIC COMMUNICATION LINK - A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers. | 09-11-2014 |
| 20140266329 | FREQUENCY QUADRUPLERS AT MILLIMETER-WAVE FREQUENCIES - A symmetric frequency multiplier includes four non-linear devices configured to receive an input signal having a fundamental mode and to provide an output having one or more harmonics; and three collinear transmission lines, each having a length of about one quarter of an input wavelength, configured to receive the outputs of the non-linear devices and configured to combine bifurcated components of the signals from the non-linear devices into two frequency-multiplied output signals. Two of the signals from the non-linear devices are provided at respective ends of the collinear transmission lines and two of the signals from the non-linear devices are provided between transmission lines, such that each of the bifurcated components of a given signal passes through a different subset of the transmission lines. | 09-18-2014 |
| 20140266330 | FREQUENCY QUADRUPLERS AT MILLIMETER-WAVE FREQUENCIES - Methods for increasing a signal frequency include generating two or more signals having a fundamental mode and one or more harmonics; phase shifting bifurcated components of the two or more signals in transmission lines; and combining the bifurcated components to create an output signal that cancels a fundamental mode, a second harmonic, and a third harmonic in the signals to produce a frequency-multiplied output signal. | 09-18-2014 |
| 20140312986 | TUNABLE INTERCONNECT STRUCTURES, AND INTEGRATED CIRCUIT CONTAINING THE SAME - Tunable interconnect structures, integrated circuits containing the tunable interconnect structures and methods of manufacturing the same are disclosed. The interconnect transmission line structure includes a signal conductor and a plurality of conductors in proximity to the signal conductor. The structure further includes one or more switchable conductors in proximity to at least the signal conductor. The one or more switchable conductors has a programmable wiring switch with a terminal connected to the one or more switchable conductors and another terminal connected to ground. | 10-23-2014 |
| 20140315500 | MILLIMETER WAVE PHASE SHIFTERS USING TUNABLE TRANSMISSION LINES - Tunable phase shifters and methods for using the same include a signal line; one or more grounding lines; one or more crossing lines below the signal line in proximity to the signal line and substantially perpendicular to a longitudinal direction of the signal line, where the crossing lines conform to the shape of the signal line along at least three surfaces of the signal line and where the crossing lines have a tunable capacitance; and an inductance return line below the crossing lines substantially parallel to the longitudinal direction of the signal line, where the inductance return line provides a tunable inductance. | 10-23-2014 |
| 20150077191 | CURRENT RE-USE OSCILLATOR, DOUBLER AND REGULATOR CIRCUIT - There is provided an integrated electronic circuit. The integrated electronic circuit includes a voltage controlled oscillator and a frequency doubler connected to the voltage controlled oscillator. A frequency doubling input of the frequency doubler is load isolated from an output of the voltage controlled oscillator. | 03-19-2015 |
| 20150077192 | CURRENT RE-USE OSCILLATOR, DOUBLER AND REGULATOR CIRCUIT - There is provided an integrated electronic circuit. The integrated electronic circuit includes a voltage controlled oscillator and a frequency doubler connected to the voltage controlled oscillator. A frequency doubling input of the frequency doubler is load isolated from an output of the voltage controlled oscillator. | 03-19-2015 |
