Patent application number | Description | Published |
20120077759 | 3-3-Di-Substituted-Oxindoles as Inhibitors of Translation Initiation - Compositions and methods for inhibiting translation using 3-(5-tert-Butyl-2-Hydroxy-phenyl)-3-phenyl-1,3-dihydro-indol-2-one and/or its derivatives are provided. Compositions, methods and kits for treating (1) cellular proliferative disorders, (2) non-proliferative, degenerative disorders, (3) viral infections, and/or (4) disorders associated with viral infections, using 3-(5-tert-butyl-2-hydroxy-phenyl)-3-phenyl-1,3-dihydro-indol-2-one and/or its derivatives are described. | 03-29-2012 |
20120115915 | N,N'-DIARYLUREA COMPOUNDS AND N,N'-DIARYLTHIOUREA COMPOUNDS AS INHIBITORS OF TRANSLATION INITIATION - Compositions and methods for inhibiting translation initiation are provided. Compositions, methods and kits for treating (1) cellular proliferative disorders, (2) non-proliferative, degenerative disorders, (3) viral infections, and/or (4) disorders associated with viral infections, using N,N′-diarylureas and/or N,N′-diarylthiourea compounds are described. | 05-10-2012 |
20130178505 | Compounds for the Inhibition of Cellular Proliferation - Compositions and methods for inhibiting translation are provided. Compositions, methods and kits for treating (1) cellular proliferative disorders, (2) non-proliferative, degenerative disorders, (3) viral infections, (4) disorders associated with viral infections, and/or (5) non-proliferative metabolic disorders such as type II diabetes where inhibition of translation initiation is beneficial using the compounds disclosed herein. | 07-11-2013 |
Patent application number | Description | Published |
20090299058 | 3-3-DI-SUBSTITUTED-OXINDOLES AS INHIBITORS OF TRANSLATION INITIATION - Compositions and methods for inhibiting translation using 3-(5-tert-Butyl-2-Hydroxy-phenyl)-3-phenyl-1,3-dihydro-indol-2-one and/or its derivatives are provided. Compositions, methods and kits for treating (1) cellular proliferative disorders, (2) non-proliferative, degenerative disorders, (3) viral infections, and/or (4) disorders associated with viral infections, using 3-(5-tert-butyl-2-hydroxy-phenyl)-3-phenyl-1,3-dihydro-indol-2-one and/or its derivatives are described. | 12-03-2009 |
20100144805 | Regulation of protein synthesis - A composition and method for inhibiting proliferation of a tumor cell compared to a non-tumor cell. Also described are methods of screening for a composition that inhibits cap-dependent translation compared to cap-independent translation of proteins. | 06-10-2010 |
20100249201 | 3-3-Di-Substituted-Oxindoles As Inhibitors of Translation Initiation - Compositions and methods for inhibiting translation using 3-(5-tert-Butyl-2-Hydroxy-phenyl)-3-phenyl-1,3-dihydro-indol-2-one and/or its derivatives are provided. Compositions, methods and kits for treating (1) cellular proliferative disorders, (2) non-proliferative, degenerative disorders, (3) viral infections, and/or (4) disorders associated with viral infections, using 3-(5-tert-butyl-2-hydroxy-phenyl)-3-phenyl-1,3-dihydro-indol-2-one and/or its derivatives are described. | 09-30-2010 |
20110046367 | 3-3-DI-SUBSTITUTED-OXINDOLES AS INHIBITORS OF TRANSLATION INITIATION - Compositions and methods for inhibiting translation using 3-(5-tert-Butyl-2-Hydroxy-phenyl)-3-phenyl-1,3-dihydro-indol-2-one and/or its derivatives are provided. Compositions, methods and kits for treating (1) cellular proliferative disorders, (2) non-proliferative, degenerative disorders, (3) viral infections, and/or (4) disorders associated with viral infections, using 3-(5-tert-butyl-2-hydroxy-phenyl)-3-phenyl-1,3-dihydro-indol-2-one and/or its derivatives are described. | 02-24-2011 |
20120135412 | QUALITY CONTROL BIOASSAYS FOR NUTRICEUTICAL AND MEDICINAL PRODUCTS - Bioassays for detecting the ability of one sample of a food substance, nutritional supplement, therapeutic agent and/or disease preventive agent relative to that of a second sample of such a substance, supplement and/or agent to inhibit, upregulate or otherwise modulate translation initiation, and thereby demonstrate a disease curative and/or preventive effect in a human and/or animal that consumes a such substance, supplement and/or agent or to whom a such substance, supplement and/or agent is administered are provided. | 05-31-2012 |
20150185212 | Quality Control Bioassays For Nutriceutical And Medicinal Products - Bioassays for detecting the ability of one sample of a food substance, nutritional supplement, therapeutic agent and/or disease preventive agent relative to that of a second sample of such a substance, supplement and/or agent to inhibit, upregulate or otherwise modulate translation initiation, and thereby demonstrate a disease curative and/or preventive effect in a human and/or animal that consumes a such substance, supplement and/or agent or to whom a such substance, supplement and/or agent is administered are provided. | 07-02-2015 |
20150301023 | CELL BASED QUALITY CONTROL BIOASSAYS FOR NUTRICEUTICAL AND MEDICINAL PRODUCTS - A method for determining the translation initiation inhibitory potency of a composition having an unknown level of translation initiation inhibitory activity which comprises contacting an eI-F2α-WT cell with said composition for a time and at a temperature effective to inhibit proliferation of said cell, measuring the level of inhibition of proliferation of said eIF2α-WT cells induced by said sample and comparing the level of inhibition of proliferation induced by said sample with the level of inhibition of proliferation induced by a standard having a known amount of said activity, the amount of said translation initiation inhibitory activity in said sample being proportional to the level of inhibition of proliferation of said eIF2α-WT cell. | 10-22-2015 |
Patent application number | Description | Published |
20140312355 | METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH REGROWN GALLIUM NITRIDE LAYER - A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer. | 10-23-2014 |
20150129886 | GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNEL - A method for fabricating a lateral gallium nitride (GaN) field-effect transistor includes forming a first and second GaN layer coupled to a substrate, removing a first portion of the second GaN layer to expose a portion of the first GaN layer, and forming a third GaN layer coupled to the second GaN layer and the exposed portion of the first GaN layer. The method also includes removing a portion of the third GaN layer to expose a portion of the second GaN layer, forming a source structure coupled to the third GaN layer. A first portion of the second GaN layer is disposed between the source structure and the second GaN layer. A drain structure is formed that is coupled to the third GaN layer or alternatively to the substrate. The method also includes forming a gate structure coupled to the third GaN layer such that a second portion of the third GaN layer is disposed between the gate structure and the second GaN layer. | 05-14-2015 |
20150340449 | GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNEL - A method for fabricating a lateral gallium nitride (GaN) field-effect transistor includes forming a first and second GaN layer coupled to a substrate, removing a first portion of the second GaN layer to expose a portion of the first GaN layer, and forming a third GaN layer coupled to the second GaN layer and the exposed portion of the first GaN layer. The method also includes removing a portion of the third GaN layer to expose a portion of the second GaN layer, forming a source structure coupled to the third GaN layer. A first portion of the second GaN layer is disposed between the source structure and the second GaN layer. A drain structure is formed that is coupled to the third GaN layer or alternatively to the substrate. The method also includes forming a gate structure coupled to the third GaN layer such that a second portion of the third GaN layer is disposed between the gate structure and the second GaN layer. | 11-26-2015 |