Patent application number | Description | Published |
20120103265 | VAPOR PHASE GROWTH APPARATUS - Disclosed is a rotation/revolution type vapor phase growth apparatus that allows for automatic meshing between an external gear and an internal gear. In the apparatus, on tooth side surfaces of at least one kind of a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of a disk-shaped susceptor and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into a meshed state when both kinds of the gear members move from a non-meshed state to the meshed state. | 05-03-2012 |
20120160170 | VAPOR PHASE GROWTH APPARATUS - Disclosed is a rotation/revolution type vapor phase growth apparatus that can maintain constant flow rates of a purge gas and a raw material gas when a raw material gas introducing direction is set to be the same as a susceptor rotation introducing direction. Inside a hollow drive shaft | 06-28-2012 |
20130167771 | VAPOR PHASE GROWTH APPARATUS - A vapor phase growth apparatus with a measuring means which can measure the state of the warpage of a substrate, which is a rotation/revolution type vapor phase growth apparatus with a susceptor and a plurality of substrate retaining members in a chamber, wherein a measuring means comprising a laser source which continuously emits a laser light in a direction perpendicular to the surface of the substrate which is retained in the substrate retaining member and is rotating/revolving by the rotation of the susceptor and a light receiving portion which receives a laser light reflected on the surface of the substrate is fixed on the outer surface of a laser transparent portion provided on the chamber; and a judging means which judges that the substrate is in an abnormal state when the variation of the reflected light received by the light receiving portion is larger than a preset variation is provided. | 07-04-2013 |
20130203237 | CUTTING METHOD FOR DEVICE WAFER - A cutting method for cutting a device wafer along a plurality of crossing division lines by using a cutting blade, the division lines being formed on the front side of the device wafer to partition a plurality of regions where a plurality of devices are respectively formed. The cutting method includes a hydrophilic property providing step of applying a plasma to the front side of the device wafer to thereby make hydrophilic the front side of the device wafer, and a cutting step of cutting the device wafer along the division lines by using the cutting blade as supplying a cutting fluid to the device wafer after performing the hydrophilic property providing step. | 08-08-2013 |
20140007815 | SUSCEPTOR AND VAPOR-PHASE GROWTH APPARATUS - The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and | 01-09-2014 |
20140014039 | VAPOR-PHASE GROWTH APPARATUS - The present invention provides a vapor-phase growth apparatus, including: a reaction furnace in which a susceptor is removably installed, and in which vapor-phase growth is conducted; a transport robot which transports the aforementioned susceptor; a glove box which accommodates the pertinent transport robot and the aforementioned reaction furnace; an exchange table which is set up inside the pertinent glove box, and on which a susceptor is temporarily mounted during susceptor replacement; and an exchange box which is provided in a side wall of the aforementioned glove box, and in which susceptor replacement is conducted; and wherein the aforementioned exchange table comprises a positioning device which rotates upon mounting of the aforementioned susceptor, and which determines a position of the aforementioned susceptor in a rotational direction by stopping at a prescribed rotational position. | 01-16-2014 |
20150137842 | PROBER - A prober includes: a wafer chuck having a conductive support surface; a movement rotation mechanism which moves and rotates the wafer chuck; a head stage which holds a probe holding portion; a stage member which has a conductive stage surface that is formed in parallel to the support surface and electrically connected with the support surface, and can move integrally with the wafer chuck; and a contactor which is fixed to a position facing the stage member and whose tip can electrically come into contact with the stage surface, wherein the stage member is separated from the wafer chuck as a separate body, and the stage surface and the support surface are electrically connected through a wiring member; and a back-surface electrode of a chip is electrically connected with a tester through the wafer chuck, a wiring, the stage member and the contactor. | 05-21-2015 |
20150232988 | VAPOR PHASE GROWTH APPARATUS - Provided is a high-productivity, compact vapor phase growth apparatus | 08-20-2015 |