Patent application number | Description | Published |
20090120580 | Disturbance-Free, Recipe-Controlled Plasma Processing System And Method - A plasma processing apparatus includes a vacuum processing apparatus for performing a multi-step processing operation for a sample, a sensor for monitoring process parameters during at least a first step of the processing operation, a signal compression unit for compressing a signal from the sensor to generate an apparatus state signal, a worked result estimate model unit which estimates a processed result on the basis of the apparatus state signal and a set processed-result estimation equation, an optimum recipe calculation model unit which calculates corrections to processing conditions so that the processed result becomes a target value, a usable recipe selecting unit which judges validity of an optimum recipe. At a next step of the processing operation, sample processing is performed under optimum conditions on the basis of the usable recipe selected by the selected usable recipe. | 05-14-2009 |
20090253222 | Etching process state judgment method and system therefor - An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process. | 10-08-2009 |
20100068009 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus includes a plurality of vacuum containers; a vacuumized transfer unit connected with the vacuum containers and having a transfer chamber; a plurality of lock chambers connected to the vacuumized transfer unit; a vacuumized transferring section arranged in the transfer chamber to transfer the sample between each of the lock chambers and each of the processing chambers inside the plurality of vacuum containers; an atmospheric transfer container having a space through which the sample is transferred under the atmospheric pressure; an atmospheric transfer unit arranged in the atmospheric transfer container and adapted to transfer the sample from a cassette; and a controller operative on the basis of schedule information of a plurality of operations to adjust the operations, the information including times of stagnation of the plurality of samples and set therefor. | 03-18-2010 |
20120018094 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for applying an etching processing to a wafer by using at least two steps of the etching processing which operate with plasma formed within a pressure-reduced processing chamber, the wafer being located within the processing chamber inside a vacuum vessel, and having a mask on a silicon-composed substrate and a film structure, the film structure including processing-target films located under the mask, wherein the plasma processing apparatus is equipped with a function for processing another different wafer in such a manner that a processing condition at a precedent-stage step of the two steps of the etching processing in the processing of the different wafer is adjusted based on a result obtained by detecting a time which has elapsed until termination of a subsequent-stage step of the two steps of the etching processing. | 01-26-2012 |
20120310403 | ETCHING APPARATUS, CONTROL SIMULATOR,AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C | 12-06-2012 |
20130119016 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, an actuator which controls a parameter constituting a plasma processing condition, N+1 correction amount calculating units which calculate a correction amount of a manipulated variable on the basis of a difference between a process monitor value monitored by the process monitor and a desired value of the process monitor and a correlation between the process monitor value and a manipulated variable, which is the parameter, the correlation having been acquired in advance, and N manipulated variable adding units that add a manipulated variable having a priority level next to an N-th manipulated variable. The N-th manipulated variable adding unit defines a correction amount calculated by the N+1-th correction amount calculating unit as the correction amount of an N+1-th manipulated variable. | 05-16-2013 |
20130173042 | SEMICONDUCTOR MANUFACTURING EQUIPMENT - Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio. | 07-04-2013 |
20140022540 | ANALYSIS METHOD, ANALYSIS DEVICE, AND ETCHING PROCESSING SYSTEM - Among the multiple OES data wavelengths, an analysis device identifies the wavelength of light emissions from a substance contained in the plasma from among multiple light emission wavelengths within the chamber by way of the steps of: measuring the light emission within the chamber during etching processing of the semiconductor wafer; finding the time-based fluctuation due to changes over time on each wavelength in the measured intensity of the light emissions in the chamber; comparing the time-based fluctuations in the wavelength of the light emitted from the pre-specified substance; and by using the comparison results, identifying the wavelength of the light emitted from the substance caused by light emission within the chamber. | 01-23-2014 |
20140339193 | Plasma Processing Method - Method for carrying out plasma processing on a wafer under Run-to-Run control by using a plasma processing apparatus having a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, and an actuator which controls parameters which are constituent elements of a plasma processing condition. The method includes the steps of making one of the parameters a (N−1)th manipulated variable, calculating a first difference between a process monitor value in the plasma processing obtained by the process monitor and a desired value of the process monitor value in the plasma processing, calculating a correction amount of the (N−1)th manipulated variable on the basis of the first difference and a previously obtained correlation between the process monitor value in the plasma processing and the (N−1)th manipulated variable, wherein N is a natural number equal to or larger than 2. | 11-20-2014 |