Patent application number | Description | Published |
20080212636 | Surface-Emission Laser Diode and Fabrication Process Thereof - A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of Al | 09-04-2008 |
20080233017 | Semiconductor Oxidation Apparatus and Method of Producing Semiconductor Element - A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part. | 09-25-2008 |
20090168828 | VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION PROCESS THEREOF - A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector. | 07-02-2009 |
20090262770 | SURFACE-EMISSION LASER DIODE, SURFACE-EMISSION LASER DIODE ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS - A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure includes a conductive current confinement region and an insulation region surrounding the conductive current confinement region, the insulation region being an oxide of a semiconductor material forming the conductive current confinement region, and wherein a center of the current confinement region is offset from a center of the mesa structure in a plane perpendicular to a laser oscillation direction. | 10-22-2009 |
20090286342 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, SURFACE-EMISSION LASER DIODE, AND PRODUCTION APPARATUS THEREOF, PRODUCTION METHOD, OPTICAL MODULE AND OPTICAL TELECOMMUNICATION SYSTEM - A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature. | 11-19-2009 |
20090295902 | SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING DEVICE - A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer. | 12-03-2009 |
20090303308 | SURFACE-EMITTING LASER ELEMENT, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS - A surface-emitting laser element for emitting light in a direction perpendicular to a substrate, including a substrate with a normal direction of a principal plane inclining toward one direction of <111> with respect to one direction of <100> and a mesa structure formed on the substrate and having a narrowed structure with an oxide produced by oxidizing a part of a layer to be oxidized selectively, containing aluminum and surrounding an electric current passage area, wherein a cross-section of mesa structure being parallel to the substrate is parallel to a substrate surface and orthogonal to both one direction of <100> and one direction of <111> and a length in a first direction passing through a center of the electric current passage area is more than a length in a second direction parallel to a substrate surface and orthogonal to the first direction. | 12-10-2009 |
20100060712 | SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS - A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction. | 03-11-2010 |
20100118907 | SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF - A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of Al | 05-13-2010 |
20100311194 | Method For Manufacturing Surface-Emitting Laser Device, Optical Scanner, Image Forming Apparatus, And Oxidation Apparatus - Disclosed is a method for manufacturing a surface-emitting laser device that emits laser light in a direction perpendicular to a substrate. The method includes manufacturing a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting mirror including a selectively oxidized layer are laminated on the substrate; etching the laminated body from an upper surface to form a mesa structure having at least the selectively oxidized layer exposed at a side surface; and mounting the laminated body on a tray having a front surface shaped to follow a warpage of the laminated body at an oxidation temperature and selectively oxidizing the selectively oxidized layer from the side surface of the mesa structure, thereby generating a confinement structure in which a current passing region is surrounded by an oxide. | 12-09-2010 |
20110211869 | MANUFACTURING METHOD, SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, AND IMAGE FORMING APPARATUS - A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body. | 09-01-2011 |
20120040515 | Semiconductor Light-Emitting Device, Surface-Emission Laser Diode, and Production Apparatus Thereof, Production Method, Optical Module and Optical Telecommunication System - A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature. | 02-16-2012 |
20120057902 | METHOD OF MANUFACTURING SURFACE EMITTING LASER, AND SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE AND IMAGE FORMING APPARATUS - A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed. | 03-08-2012 |
20120069416 | SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS - A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction. | 03-22-2012 |
20120263206 | SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF - A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg reflector includes a semiconductor layer containing Al, Ga and As as major components, there being provided, between the active layer and the semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components adjacent to the semiconductor layer that contains Al, Ga and As as major components, with an interface formed coincident to a location of a node of electric strength distribution. | 10-18-2012 |
20120294652 | SURFACE EMITTING LASER DIODE, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS - A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to he manufactured with high yield rate. | 11-22-2012 |
20130015920 | ATOMIC OSCILLATOR AND METHOD FOR FABRICATING ATOMIC OSCILLATORAANM SATO; ShunichiAACI MiyagiAACO JPAAGP SATO; Shunichi Miyagi JPAANM ITOH; AkihiroAACI MiyagiAACO JPAAGP ITOH; Akihiro Miyagi JPAANM SATO; YukitoAACI MiyagiAACO JPAAGP SATO; Yukito Miyagi JP - An atomic oscillator is disclosed, including an Alkaline metal cell, a light source illuminating a laser beam to the Alkaline metal cell, and a light detector detecting light passing through the Alkaline metal cell. The Alkaline metal cell includes a first member, a second member, a cell internal portion, and an Alkaline metal raw material. In the first member, a first glass substrate is bonded on a second surface of a first substrate where a first opening part is formed. In the second member, a second glass substrate is bonded to a fourth surface of a second substrate where a second opening part is formed. The cell internal portion is formed by the first opening part and the second opening part by bonding the first surface to the third surface. The Alkaline metal raw material is enclosed by the cell internal portion. | 01-17-2013 |
20130070039 | SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, IMAGE FORMING APPARATUS, AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER DEVICE - A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region. | 03-21-2013 |
20130157397 | MANUFACTURING METHOD, SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, AND IMAGE FORMING APPARATUS - A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body. | 06-20-2013 |
20130230070 | SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING DEVICE - A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer. | 09-05-2013 |
20130286150 | SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS - A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction. | 10-31-2013 |
20140064313 | SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF - In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains AI, Ga and As as major components, a semiconductor layer containing AI, In and P as major components such that the semiconductor layer containing AI, In and P as major components is provided adjacent to the semiconductor layer that contains AI, Ga and As as major components. Further, an interface between the semiconductor layer containing AI, Ga and As as major components and the semiconductor layer containing AI, In and P as major components is coincident to a location of a node of electric field strength distribution. | 03-06-2014 |
20140130975 | METHOD OF MANUFACTURING SURFACE EMITTING LASER, AND SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE AND IMAGE FORMING APPARATUS - A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed. | 05-15-2014 |
20140139294 | ALKALI METAL CELL, ATOMIC OSCILLATOR, AND ALKALI METAL CELL FABRICATING METHOD - An alkali metal cell is disclosed, including a substrate in which is formed an opening which penetrates from one face to the other face thereof; a first transparent substrate bonded to the other face of the substrate; and a second transparent substrate bonded to the one face of the substrate, wherein an alkali metal is sealed into a space surrounded by the first transparent substrate and the second transparent substrate in the opening of the substrate, wherein, in the substrate and the second transparent substrate, the space is enclosed by a bonding between a first bonding metal layer formed by a first bonding metal and a second bonding metal layer formed by a second bonding metal, and wherein the second bonding metal layer has a bonding temperature higher than that of the first bonding metal layer. | 05-22-2014 |
20140219683 | SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, IMAGE FORMING APPARATUS, AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER DEVICE - A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region. | 08-07-2014 |