Patent application number | Description | Published |
20110132194 | Partial Wall-Flow Filter and Method. - A partial wall-flow filter having some unplugged flow-through channels and some plugged channels. Desirable combinations of filtration efficiency and back pressure may be provided by combinations of t wall≦305 urn, MPD≦20 μm, % P≧50%, and CD≧250 cpsi wherein t wall is the transverse thickness of the porous walls, MPD is a mean pore diameter of the porous walls, % P is the total porosity of the porous walls, and CD is the cell density of the channels. In one embodiment, some of the plugged channels are located adjacent to the inlet end and some are located adjacent to the outlet end. Systems and method including the partial wall-flow filter are also described. | 06-09-2011 |
20140130550 | PULLING ROLLS WITH SPRING ELEMENTS HAVING INCREASED ANGULAR LENGTH FOR USE IN GLASS MANUFACTURING AND PROCESSES INCORPORATING THE SAME - In one embodiment, a pulling roll for drawing glass sheet in a down-draw process includes a shaft member and a compliant cover assembly positioned on the shaft member. The compliant cover assembly includes at least one traction disk positioned on the shaft member. The at least one traction disk includes an annular hub and a plurality of spring elements integrally formed with the annular hub. The spring elements project outward from the annular hub such that an end of each spring element is positioned radially outward from a base of each spring element and is circumferentially offset relative to the base of each spring element. | 05-15-2014 |
20140130551 | PULLING ROLLS WITH DEFLECTION LIMITATION FOR USE IN GLASS MANUFACTURING AND PROCESSES INCORPORATING THE SAME - In one embodiment, a pulling roll for drawing glass sheet in a down-draw process includes a shaft member and a compliant cover assembly positioned on the shaft member. The compliant cover assembly includes at least one traction disk and at least one deflection limiting disk positioned on the shaft member. The at least one traction disk includes an annular hub and a plurality of spring elements integrally formed with the annular hub. The at least one deflection limiting disk includes at least one deflection limiting element positioned on each deflection limiting disk. The at least one deflection limiting element engages at least a portion of at least one traction disk upon a predetermined amount of inward radial deflection of the plurality of spring elements, thereby limiting the inward radial deflection of the plurality of spring elements. | 05-15-2014 |
20140328560 | FIBER OPTIC CABLE CRIMP ASSEMBLIES EMPLOYING INTEGRALLY CONNECTED CABLE STRAIN RELIEF BOOTS, AND RELATED FIBER OPTIC CONNECTORS, CABLES, AND METHODS - Embodiments disclosed herein include fiber optic cable crimp assemblies employing integrally connected cable strain relief boots to provide a single component crimp assembly. Related fiber optic connectors, cables, and methods are also disclosed. A fiber optic cable crimp assembly is employed for securing a fiber optic connector assembly to a fiber optic cable to form a terminated fiber optic connector. The fiber optic cable crimp assembly includes a cable strain relief boot configured to receive an end portion of a fiber optic cable to provide bend and strain relief for the end portion of the fiber optic cable. A fiber optic cable crimp band is integrally connected to the cable strain relief boot. The fiber optic crimp assembly is further configured to secure the end portion of the fiber optic cable to a fiber optic connector assembly. | 11-06-2014 |
20140331716 | COMPENSATED MOLDS FOR MANUFACTURING ION EXCHANGE STRENGTHENED, 3D GLASS COVERS - Methods for compensating for the warp exhibited by three-dimensional glass covers as a result of ion exchange strengthening are provided. The methods use a computer-implemented model to predict/estimate changes to a target three-dimensional shape for the 3D glass cover as a result of ion exchange strengthening. The model includes the effects of ion exchange through the edge of the 3D glass cover. In an embodiment, the inverse of the predicted/estimated changes is used to produce a compensated (corrected) mold which produces as-molded parts which when subjected to ion exchange strengthening have shapes closer to the target shape than they would have had if the mold had not been compensated (corrected). | 11-13-2014 |
20160039704 | PULL-ROLL CARTRIDGES FOR USE IN GLASS MANUFACTURING PROCESSES AND METHODS FOR MAKING AND USING THE SAME - A cartridge assembly includes a hub portion having a first end and a second end, a first retaining ring portion including a first snap ring and a first retaining ring member, and a second retaining ring portion including a second snap ring and a second retaining ring member. The cartridge assembly further includes a plurality of disc elements positioned between the first retaining ring portion and the second retaining ring portion, where the plurality of disc elements has an outer diameter that is greater than an outer diameter of the first retaining ring portion and the second retaining ring portion, and a plurality of fastening members positioned at the first end and the second end of the hub portion, the plurality of fastening members extending radially inward from the hub portion. | 02-11-2016 |
Patent application number | Description | Published |
20090196935 | Pharmaceutical Capsules Comprising Extended Release Dipyridamole Pellets - The present invention is directed to pharmaceutical capsules comprising extended release formulations of dipyridamole, processes for preparing such dipyridamole extended release formulations and their use in the treatment of stroke. | 08-06-2009 |
20090202612 | Monolithic Intravaginal Rings Comprising Progesterone and Methods of Making and Uses Thereof - The present invention relates to monolithic intravaginal rings comprising progesterone, methods of making, and uses thereof. The intravaginal rings comprise progesterone, a polysiloxane elastomer, and a pharmaceutically acceptable hydrocarbon or glycerol esters of a fatty acid. | 08-13-2009 |
20100015239 | Orally Disintegrating Solid Pharmaceutical Dosage Forms Comprising Delayed-Release Lansoprazole and Methods of Making and Using the Same - The present invention relates to non-effervescent, orally disintegrating solid pharmaceutical dosage forms comprising delayed-release lansoprazole, processes for preparing the dosage forms, and methods for treating one or more conditions with the dosage forms. | 01-21-2010 |
20100040671 | Intravaginal Devices With a Rigid Support, Methods of Making, and Uses Thereof - The present invention relates to intravaginal devices having a rigid support, methods of making, and uses thereof. The devices comprise (a) a rigid support having a Shore A Hardness of at least about 20 and a tensile strength of at least about 1 MPa, (b) a matrix, and (c) an active agent dispersed in the matrix, wherein the support and the matrix are adjacent and wherein the device is annular. | 02-18-2010 |
20100112045 | SURFACE-TREATED MODAFINIL PARTICLES - The present invention is directed to solid oral dosage forms comprising surface-treated particles comprising modafinil particles and a hydrophilic treating agent, methods of making the same, and uses thereof. | 05-06-2010 |
20100260860 | Methods for Treating Vasomotor Symptoms in Castrated Prostatic Cancer Patients with Low Dose Cyproterone Acetate - The present invention is directed to methods of treating vasomotor symptoms in castrated prostatic cancer patients in need of treatment, comprising administering about 15 mg or less of cyproterone acetate per day to the patients. The present invention is further directed to dosage forms comprising about 1 mg to about 15 mg of cyproterone acetate and a package comprising a plurality of dosage forms comprising about 1 mg to about 15 mg of cyproterone acetate. | 10-14-2010 |
20110046115 | Mirtazapine Solid Dosage Forms - A non-effervescent, solid dosage form containing mirtazapine, which is used to form mirtazapine pharmaceutical tablets. The dosage form contains mirtazapine, a hydrophilic component, and at least one lubricant. In some embodiments, the dosage forms contain a salivating agent. Processes for producing mirtazapine orally disintegrating tablets are also provided. | 02-24-2011 |
20110136771 | Orally Disintegrating Solid Dosage Forms Comprising Progestin and Methods of Making and Use Thereof - The present invention is directed to non-effervescent, orally disintegrating solid pharmaceutical dosage forms comprising progestin and methods of making and using the dosage forms to treat conditions in females in need thereof. | 06-09-2011 |
20110212155 | Flexible, Compressed Intravaginal Rings, Methods of Making and Using the Same, and Apparatus for Making the Same - The present invention is directed to flexible, compressed intravaginal rings comprising a substantially homogeneous compressed mixture comprising a polymethacrylate, a plasticizer, and an active agent, and methods of making and using the same, and apparatus for making the same. | 09-01-2011 |
20110287096 | MODIFIED GASTRORETENTIVE DRUG DELIVERY SYSTEM FOR AMINE DRUGS - Oral dosage forms for basic amine drugs, the dosage forms having a gastro-retentive component and a non gastro-retentive component. These dosage forms are capable of providing both IR and SR release rates for these drugs. In addition, they provide for release of the drug in the stomach and/or intestine of a mammal to which such dosage forms are administered. Such dosage forms include tablets and capsules. Such dosage forms provide improved bioavailability of otherwise poorly bioavailable basic amine drugs. | 11-24-2011 |
20120082726 | SURFACE-TREATED MODAFINIL PARTICLES - The present invention is directed to solid oral dosage forms comprising surface-treated particles comprising modafinil particles and a hydrophilic treating agent, methods of making the same, and uses thereof. | 04-05-2012 |
20140030311 | MONOLITHIC INTRAVAGINAL RINGS COMPRISING PROGESTERONE AND METHODS OF MAKING AND USES THEREOF - The present invention relates to monolithic intravaginal rings comprising progesterone, methods of making, and uses thereof. The intravaginal rings comprise progesterone, a polysiloxane elastomer, and a pharmaceutically acceptable hydrocarbon or glycerol esters of a fatty acid. | 01-30-2014 |
20140142076 | ORAL TRANSMUCOSAL DRUG DELIVERY SYSTEM - This invention relates to dosage forms for the delivery of drugs across the oral mucosa having improved transmucosal permeability. More specifically, the invention relates to an oral transmucosal dosage form comprising a primary vehicle comprising a crystallization inhibition agent (CIA) system and a drug, and a secondary vehicle. It also relates to methods of designing and making this dosage form, methods of administering this dosage form and methods of packaging the dosage forms. | 05-22-2014 |
Patent application number | Description | Published |
20110308969 | REDUCING CORROSION AND WATER DECOMPOSITION ON A SURFACE OF A TITANIUM NITRIDE ELECTRODE - The present invention provides a method of reducing corrosion and water decomposition on a surface of an electrode having a titanium nitride conductive layer disposed on a substrate and estimating extent of reduction thereof. The electrode is immersed into a solution containing a hydroxyl-functional compound. Thereafter, a voltage is applied to the titanium nitride conductive layer of the electrode. The extent of oxidation of the titanium nitride conductive layer is correlated with the extent of formation of oxide of titanium nitride and/or the extent of oxidation of the titanium nitride conductive layer is correlated with the increase of surface roughness. The extent of water decomposition is correlated with formation of hydrogen and oxygen bubbles. | 12-22-2011 |
20110312164 | FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING A CUSTOM OXIDE LAYER - The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision. | 12-22-2011 |
20110312176 | FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING AN ORGANIC PROTECTIVE LAYER - Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound. | 12-22-2011 |
20120055612 | ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES - Photovoltaic devices and methods for preparing a p-type semiconductor layer for the photovoltaic devices generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy with the electroplating process. | 03-08-2012 |
20120055801 | Gallium Electrodeposition Processes and Chemistries - Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution. | 03-08-2012 |
20120061247 | Method and Chemistry for Selenium Electrodeposition - Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided. | 03-15-2012 |
20120061250 | Zinc Thin Films Plating Chemistry and Methods - Techniques for electrodepositing zinc (Zn)-containing films are provided. In one aspect, a method of preparing a Zn electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of at least one zinc salt, a sulfonic acid and a solvent. The sulfonic acid is quenched with a base. A pH of the solution is adjusted to be either less than about 3.5 or greater than about 8.0. The pH of the solution can be adjusted by adding additional sulfonic acid to the solution to adjust the pH of the solution to be less than about 3.5 or by adding a second base to the solution to adjust the pH of the solution to be greater than about 8.0. A Zn electroplating solution and an electroplating method are also provided. | 03-15-2012 |
20120061790 | Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition - Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided. | 03-15-2012 |
20120325668 | Gallium Electrodeposition Processes and Chemistries - Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution. | 12-27-2012 |
20130008798 | ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES - Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy. | 01-10-2013 |
20130125977 | Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition - Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided. | 05-23-2013 |
20130206233 | CHECKING THE STOICHIOMETRY OF I-III-VI LAYERS FOR USE IN PHOTOVOLTAIC USING IMPROVED ELECTROLYSIS CONDITIONS - The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition. | 08-15-2013 |
20140026949 | OHMIC CONTACT OF THIN FILM SOLAR CELL - A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide material layer is deposited over the chalcogen-resistant material. The conductive elongated nanostructures, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by blocking chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material. | 01-30-2014 |
20140030843 | OHMIC CONTACT OF THIN FILM SOLAR CELL - A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide/kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material. | 01-30-2014 |
20140045295 | PLASMA ANNEALING OF THIN FILM SOLAR CELLS - Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma. | 02-13-2014 |
20140252530 | Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition - Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided. | 09-11-2014 |
20140346051 | Method and Chemistry for Selenium Electrodeposition - Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided. | 11-27-2014 |
20150079723 | Pressure Transfer Process for Thin Film Solar Cell Fabrication - In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim | 03-19-2015 |
Patent application number | Description | Published |
20130035745 | CHARGE-ENHANCED NEURAL ELECTRIC STIMULATION SYSTEM - A system and method to treat neural communication impairment is provided. The neural communication impairment is present in a neural pathway, which can be a cortico-neuromuscular pathway, an intra-brain neural pathway, or in a sensory-cortico pathway. A synchronized external stimulation is applied to a first point in proximity to a first neural component at one end of the neural pathway and to a second point in proximity to a second neural component at the other end of the neural pathway. Two induced neural handshake signals contemporaneously arrive at a neural communication impairment point in the neural pathway, triggering and stimulating a rehabilitation process by which the neural connection is permanently improved. The synchronized applied electrical signals applied to the first and second points may have an opposite polarity in dipolar neural stimulation, or may have identical polarity and waveform in in-phase neural stimulation. | 02-07-2013 |
20130053922 | DIPOLE ELECTRICAL STIMULATION EMPLOYING DIRECT CURRENT FOR RECOVERY FROM SPINAL CORD INJURY - A system and method to treat neuromuscular conditions, including spinal cord injury, by what is characterized as dipole (two point) cortico-muscular stimulation. Two-point stimulation, with oppositely charged electrodes, allows pulsed, direct current to pass through the cortico-muscular pathway. The electrodes are placed on nerves, muscles, or a combination of both, that are on opposite sides of the spinal column, forming a current that passes across the spinal column. Further, an active electrode can be placed on the spinal column and a reference electrode can be placed outside the central nervous system. These methods improve functional recovery of the motor pathway. | 02-28-2013 |
20140135858 | CHARGE-ENHANCED NEURAL ELECTRIC STIMULATION SYSTEM - A system and method to treat neural communication impairment is provided. The neural communication impairment is present in a neural pathway, which can be a cortico-neuromuscular pathway, an intra-brain neural pathway, or in a sensory-cortico pathway. A synchronized external stimulation is applied to a first point in proximity to a first neural component at one end of the neural pathway and to a second point in proximity to a second neural component at the other end of the neural pathway. Two induced neural handshake signals contemporaneously arrive at a neural communication impairment point in the neural pathway, triggering and stimulating a rehabilitation process by which the neural connection is permanently improved. The synchronized applied electrical signals applied to the first and second points may have an opposite polarity in dipolar neural stimulation, or may have identical polarity and waveform in in-phase neural stimulation. | 05-15-2014 |
20140200387 | METHOD AND SYSTEM FOR TREATMENT OF MOBILITY DYSFUNCTION - Effective systems and methods for improving neural communication impairment of a vertebrate being and affecting motor activity of a peripheral body part including a first signal providing component configured to provide pulsed peripheral stimulation signals at the peripheral body part, a second signal providing component configured to provide a pulsed motor cortex stimulation signal to a motor cortex area, a substantially DC signal providing component configured to provide direct current spinal stimulation signal at a neural spinal junction and a controller component configured to control timing of the pulsed peripheral stimulation signals and the pulsed motor cortex stimulation signal. | 07-17-2014 |
20140257016 | METHOD AND SYSTEM FOR TREATMENT OF NEUROMOTOR DYSFUNCTION - Effective systems and methods for improving neural communication impairment of a vertebrate being and affecting motor activity of a peripheral body part including a first signal-providing component configured to provide pulsed peripheral stimulation signals at the peripheral body part, a second signal-providing component configured to provide a pulsed motor cortex stimulation signal to a motor cortex area, a substantially DC signal-providing component configured to provide direct current spinal stimulation signal at a neural spinal junction and a controller component configured to control timing of the pulsed peripheral stimulation signals and the pulsed motor cortex stimulation signal. | 09-11-2014 |
20150190633 | METHOD AND SYSTEM FOR TREATMENT OF MOBILITY DYSFUNCTION - Effective systems and methods for improving neural communication impairment of a vertebrate being and affecting motor activity of a peripheral body part including a first signal providing component configured to provide pulsed peripheral stimulation signals at the peripheral body part, a second signal providing component configured to provide a pulsed motor cortex stimulation signal to a motor cortex area, a substantially DC signal providing component configured to provide direct current spinal stimulation signal at a neural spinal junction and a controller component configured to control timing of the pulsed peripheral stimulation signals and the pulsed motor cortex stimulation signal. | 07-09-2015 |
20150196767 | TRANS-SPINAL DIRECT CURRENT MODULATION SYSTEMS - Improved neuromodulation control of neurological abnormalities associated with effector organs in vertebrate beings using direct current stimulation for modulating spinal cord excitability, having a peripheral-current supplying component for providing direct current peripheral nerve stimulation and a spinal-current supplying component providing direct current for spinal stimulation, and a controller managing such functions. | 07-16-2015 |