Patent application number | Description | Published |
20090272416 | INCREASING THE SEEBECK COEFFICIENT OF SEMICONDUCTORS BY HPHT SINTERING - A method for increasing the Seebeck coefficient of a semiconductor involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the Seebeck coefficient of the semiconductor, and recovering the semiconductor with an increased Seebeck coefficient. | 11-05-2009 |
20100069224 | CUBIC BORON NITRIDE CERAMIC COMPOSITES AND METHODS OF MAKING THEREOF - Composite materials composed of cubic boron nitride (cBN) and a matrix component of various ceramic oxides, nitrides, and solid solutions of matrix materials as well as whisker reinforcements. Methods of manufacture and their use in high performance machining of ferrous metals are also claimed and disclosed. | 03-18-2010 |
20120000138 | Sintered Cubic Boron Nitride Cutting Tool - A cutting tool having a sintered compact including 30 to 80 vol. % cubic boron nitride and a binder phase, wherein the binder phase includes about 2 to about 6 vol. % ZrN, is disclosed. In more specific examples, the cutting tool has a sintered compact including 30 to 80 vol. % cubic boron nitride, between about 4 vol. % and about 15 vol. % aluminum and/or aluminum compound and/or aluminum alloy and/or combinations thereof, and a binder phase, wherein the binder phase includes TiN and about 3 to about 5 vol. % ZrN, and wherein the cubic boron nitride has a grain size of less than 20 microns. Cutting tools of the disclosed composition display improved performance, particularly at higher operating speeds, e.g., about 200 m/min or greater. | 01-05-2012 |
20120161084 | AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING - A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT. | 06-28-2012 |
20120329632 | Composite Compacts Formed of Ceramics and Low Volume Cubic Boron Nitride and Method of Manufacture - A composite compact formed by sintering, at high temperature/high pressure, a composition including cBN in a range of about 5 to about 60 vol. %, zirconia (or in the range about 5 to about 20 vol. %), and other ceramic material. Subsequent to sintering, the zirconia exists in the cubic phase and/or tetragonal phase. The zirconia may be either stabilized or unstabilized prior to sintering. The other ceramic material may include one or more of nitrides, borides, and carbides of Ti, Zr, Hf, Al, Si, or Al | 12-27-2012 |
20130001480 | AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING - A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT. | 01-03-2013 |
20130139446 | SINTERED CUBIC BORON NITRIDE CUTTING TOOL - A sintered compact for use in making a cutting tool, the sintered compact including about 10 vol. % to about 90 vol. % cubic boron nitride, and a binder phase including about 0.1 vol. % to about 10 vol. % graphene. A method for a sintered compact including mixing a powder blend having about 10 vol. % to about 90 vol. % cubic boron nitride and about 0.1 vol. % to about 10 vol. % graphene, pressing the powder blend into a pill, and sintering the pill at high pressure and high temperature. A sintered cutting tool including about 10 vol. % to about 90 vol. % cubic boron nitride, and a binder phase including about 0.1 vol. % to about 10 vol. % graphene, wherein the sintering is performed at a pressure of about 45 kBar and a temperature of about 1500° C. for about 30 minutes. | 06-06-2013 |
20140013672 | METHODS OF IMPROVING SINTERING OF PCD USING GRAPHENE - A method of making diamond including mixing graphene with diamond seed to form a powder mixture, and then sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature; and a method of making a polycrystalline diamond compact including mixing graphene in diamond powder to form a powder mixture with less than about 50% graphene by weight, and then sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature. | 01-16-2014 |
20140151604 | METHOD FOR MEASURING PRESSURES IN A HIGH PRESSURE CELL BY MONITORING CONTINUOUS CHANGES IN PHYSICAL PROPERTIES OF GEO2-SIO2 SOLID SOLUTION - A method for the measurement of pressure in high temperature and high pressure processes includes the steps of providing at least a first material compound and at least a second material compound. The at least first and second compounds are mixed to form a material sample. The material sample is loaded into a device and the device and material sample are subjected to a high pressure of up to about 10 GPa and a high temperature of up to about 2000° C. to form the material sample into a solid crystalline solution. The material sample is recovered for analysis and the composition of the crystalline solid solution is measured to determine the pressure ex situ. | 06-05-2014 |
20140154509 | PROVIDING A CATLYST FREE DIAMOND LAYER ON DRILLING CUTTERS - A method of making a polycrystalline diamond compact including providing a layer of graphene on top of a sintered PCD and transforming the graphene at high pressure and temperature into diamond that is free of metal catalyst. A method of making PCD by providing a layer of graphene powder on top of a layer of diamond powder and sintering at high pressure and temperature to transform the graphene into diamond that is free of metal catalyst at the surface. | 06-05-2014 |