49th week of 2018 patent applcation highlights part 72 |
Patent application number | Title | Published |
20180350893 | DISPLAY DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE | 2018-12-06 |
20180350894 | INSULATING MAGNETIC COMPONENTS ON SILICON USING PNP OR NPN JUNCTIONS | 2018-12-06 |
20180350895 | Methods Of Forming An Array Of Capacitors, Methods Of Forming An Array Of Memory Cells Individually Comprising A Capacitor And A Transistor, Arrays Of Capacitors, And Arrays Of Memory Cells Individually Comprising A Capacitor And A Transistor | 2018-12-06 |
20180350896 | EFFICIENT METAL-INSULATOR-METAL CAPACITOR | 2018-12-06 |
20180350897 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350898 | Capacitor Having a Graphene Structure, Semiconductor Device Including the Capacitor and Method of Forming the Same | 2018-12-06 |
20180350899 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME | 2018-12-06 |
20180350900 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350901 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350902 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350903 | HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350904 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | 2018-12-06 |
20180350905 | INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME | 2018-12-06 |
20180350906 | Seamless Gap Fill | 2018-12-06 |
20180350907 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | 2018-12-06 |
20180350908 | PROCESS FOR FABRICATING SILICON NANOSTRUCTURES | 2018-12-06 |
20180350909 | NANOWIRE WITH SACRIFICIAL TOP WIRE | 2018-12-06 |
20180350910 | SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350911 | N-CHANNEL GALLIUM NITRIDE TRANSISTORS | 2018-12-06 |
20180350912 | FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDENT HEAT GENERATION | 2018-12-06 |
20180350913 | SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING GRAPHENE-CAPPED METAL INTERCONNECTS | 2018-12-06 |
20180350914 | LOW-DEFECT GRAPHENE-BASED DEVICES & INTERCONNECTS | 2018-12-06 |
20180350915 | SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350916 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME | 2018-12-06 |
20180350917 | SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350918 | FREE-STANDING SUBSTRATE COMPRISING POLYCRYSTALLINE GROUP 13 ELEMENT NITRIDE AND LIGHT-EMITTING ELEMENT USING SAME | 2018-12-06 |
20180350919 | Device Isolation for III-V Substrates | 2018-12-06 |
20180350920 | COPPER HALIDE SEMICONDUCTOR BASED ELECTRONIC DEVICES | 2018-12-06 |
20180350921 | TRANSITION METAL DICHALCOGENIDES (TMDCS) OVER III-NITRIDE HETEROEPITAXIAL LAYERS | 2018-12-06 |
20180350922 | HIGH MOBILITY DOPED METAL OXIDE THIN FILMS AND REACTIVE PHYSICAL VAPOR DEPOSITION METHODS OF FABRICATING THE SAME | 2018-12-06 |
20180350923 | TRANSISTOR | 2018-12-06 |
20180350924 | CONTACT SILICIDE HAVING A NON-ANGULAR PROFILE | 2018-12-06 |
20180350925 | FABRICATING RAISED SOURCE DRAIN CONTACTS OF A CMOS STRUCTURE | 2018-12-06 |
20180350926 | FinFET and Method of Forming Same | 2018-12-06 |
20180350927 | Self-Aligned Contact and Manufacturing Method Thereof | 2018-12-06 |
20180350928 | SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME | 2018-12-06 |
20180350929 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | 2018-12-06 |
20180350930 | MEMORY DEVICES INCLUDING GETTERING AGENTS IN MEMORY CHARGE STORAGE STRUCTURES | 2018-12-06 |
20180350931 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | 2018-12-06 |
20180350932 | TRANSISTOR WITH INNER-GATE SPACER | 2018-12-06 |
20180350933 | EPITAXIAL STRUCTURE OF N-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND METHOD FOR FABRICATING THE SAME WITH INTEGRATION AND POLARITY INVERSION | 2018-12-06 |
20180350934 | SEMICONDUCTOR STRUCTURE | 2018-12-06 |
20180350935 | UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES | 2018-12-06 |
20180350936 | CONTACT FORMATION ON GERMANIUM-CONTAINING SUBSTRATES USING HYDROGENATED SILICON | 2018-12-06 |
20180350937 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350938 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350939 | AIR-GAP TOP SPACER AND SELF-ALIGNED METAL GATE FOR VERTICAL FETS | 2018-12-06 |
20180350940 | FERROELECTRIC MEMORY DEVICE | 2018-12-06 |
20180350941 | THROUGH-SUBSTRATE VIA POWER GATING AND DELIVERY BIPOLAR TRANSISTOR | 2018-12-06 |
20180350942 | THROUGH-SUBSTRATE VIA POWER GATING AND DELIVERY BIPOLAR TRANSISTOR | 2018-12-06 |
20180350943 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350944 | EPITAXIAL STRUCTURE OF N-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND METHOD FOR FABRICATING THE SAME WITH INTEGRATION AND POLARITY INVERSION | 2018-12-06 |
20180350945 | METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR | 2018-12-06 |
20180350946 | METHOD OF FRABRICCATING SEMICONDUCTOR DEVICE WITH ADHESION LAYER | 2018-12-06 |
20180350947 | Metal Gate and Contact Plug Design and Method Forming Same | 2018-12-06 |
20180350948 | REDUCING METAL GATE OVERHANG BY FORMING A TOP-WIDE BOTTOM-NARROW DUMMY GATE ELECTRODE | 2018-12-06 |
20180350949 | Structure and Formation Method of Semiconductor Device with Gate Stack | 2018-12-06 |
20180350950 | Semiconductor Device and Methods of Manufacture | 2018-12-06 |
20180350951 | Vertical FET Process with Controlled Gate Length and Self-aligned Junctions | 2018-12-06 |
20180350952 | VERTICAL TUNNELING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME | 2018-12-06 |
20180350953 | FABRICATION OF STRAINED VERTICAL P-TYPE FIELD EFFECT TRANSISTORS BY BOTTOM CONDENSATION | 2018-12-06 |
20180350954 | INTEGRATED VERTICAL NANOWIRE MEMORY | 2018-12-06 |
20180350955 | GATE FORMATION WITH VARYING WORK FUNCTION LAYERS | 2018-12-06 |
20180350956 | FILM DEPOSITION FOR 3D SEMICONDUCTOR STRUCTURE | 2018-12-06 |
20180350957 | PHOTOMASK LAYOUT, METHODS OF FORMING FINE PATTERNS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES | 2018-12-06 |
20180350958 | GATE STRUCTURE OF FIELD EFFECT TRANSISTOR WITH FOOTING | 2018-12-06 |
20180350959 | PUNCH THROUGH STOPPER IN BULK FINFET DEVICE | 2018-12-06 |
20180350960 | SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350961 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350962 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350963 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | 2018-12-06 |
20180350964 | BOND-OVER-ACTIVE CIRCUITY GALLIUM NITRIDE DEVICES | 2018-12-06 |
20180350965 | SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350966 | Metal Gate Electrode of a Semiconductor Device | 2018-12-06 |
20180350967 | Ga2O3 SEMICONDUCTOR ELEMENT | 2018-12-06 |
20180350968 | Semiconductor Device with Trench Gate Structure Including a Gate Electrode and a Contact Structure for a Diode Region | 2018-12-06 |
20180350969 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FORMING THE SAME | 2018-12-06 |
20180350970 | CONTACT STRUCTURES, FINFET DEVICES AND METHODS OF FORMING THE SAME | 2018-12-06 |
20180350971 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH MULTILAYERED CHANNEL STRUCTURE | 2018-12-06 |
20180350972 | FinFET Device and Method of Forming and Monitoring Quality of the Same | 2018-12-06 |
20180350973 | Semiconductor Device and Method of Manufacturing the Same, Power Converter, Three-Phase Motor System, Automobile and Railway Vehicle | 2018-12-06 |
20180350974 | SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350975 | SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350976 | INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME | 2018-12-06 |
20180350977 | POWER SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350978 | HIGH VOLTAGE SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350979 | METHODS OF FABRICATING FIELD-EFFECT TRANSISTORS | 2018-12-06 |
20180350980 | LDMOS TRANSISTORS INCLUDING VERTICAL GATES WITH MULTIPLE DIELECTRIC SECTIONS, AND ASSOCIATED METHODS | 2018-12-06 |
20180350981 | Method of Manufacturing a Semiconductor Device Including an LDMOS Transistor | 2018-12-06 |
20180350982 | Semiconductor Device and Method for Manufacturing the Semiconductor Device | 2018-12-06 |
20180350983 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | 2018-12-06 |
20180350984 | SEMICONDUCTOR DEVICES WITH CORE-SHELL STRUCTURES | 2018-12-06 |
20180350985 | TRANSISTORS WITH HETEROEPITAXIAL III-N SOURCE/DRAIN | 2018-12-06 |
20180350986 | METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND A METHOD OF MANUFACTURING SAME USING DUMMY GATE PROCESS | 2018-12-06 |
20180350987 | HIGH PRESSURE LOW THERMAL BUDGE HIGH-K POST ANNEALING PROCESS | 2018-12-06 |
20180350988 | SEMICONDUCTOR DEVICE WITH HORIZONTALLY ALIGNED SEMICONDUCTOR CHANNELS AND METHOD FOR MANUFACTURING THE SAME | 2018-12-06 |
20180350989 | METHOD AND STRUCTURE OF STACKED FINFET | 2018-12-06 |
20180350990 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 2018-12-06 |
20180350991 | WRAPPED SOURCE/DRAIN CONTACTS WITH ENHANCED AREA | 2018-12-06 |
20180350992 | FinFET Device With High-K Metal Gate Stack | 2018-12-06 |